1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
Prof. HC Kuo
2006
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Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates
Mattias Hammar
Micro-Optics, VCSELs, and Photonic Interconnects, 2004
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Potential of InGaAs/GaAs Quantum Dots for Applications in Vertical Cavity Semiconductor Optical Amplifiers
Dimitris Syvridis
IEEE Journal of Selected Topics in Quantum Electronics, 2000
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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
Zh N
Journal of Crystal Growth, 2003
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Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays
Nigel Holehouse
IEEE Photonics Technology Letters, 2000
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Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
Prof. HC Kuo
Journal of Lightwave Technology, 2000
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Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers
Wei Fan
Opto-Electronics Review, 2011
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InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
Huiyun Liu
IEEE Journal of Selected Topics in Quantum Electronics, 2013
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High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
A. Kosogov
Journal of Applied Physics, 1998
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High-performance InAs/GaAs quantum dot laser with dot layers grown at 425 oC
yang wang
Chinese Optics Letters, 2013
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Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
Ian Sellers
Applied Physics Letters, 2002
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Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
Nikolay Bert
Applied Physics Letters, 1999
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Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
Alwyn Seeds, Mingchu Tang
Optics Express, 2012
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Quantum dot lasers: breakthrough in optoelectronics
Dieter Bimberg
Thin Solid Films, 2000
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High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
Laura Fortunato
Semiconductor Science and Technology, 2007
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Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
A. Kosogov
Applied Physics Letters, 1997
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High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers
Laura Fortunato
IEEE Photonics Technology Letters, 2006
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QD-lasers up to and beyond 1300 nm
Dieter Bimberg
1999
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Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates
Huiyun Liu
IET Optoelectronics, 2014
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Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers
Maciej Bugajski
Optical and Quantum Electronics, 2000
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Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates
Arnab Bhattacharya
Applied Physics Letters, 1996
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Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
Gabriel Walter
Applied Physics Letters, 2001
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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Dieter Bimberg
IEEE Photonics Technology Letters, 1999
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1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
Alwyn Seeds
Optics express, 2011
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High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
Ian Sellers
IEEE Photonics Technology Letters, 2000
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Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Luke Lester
IEEE Photonics Technology Letters, 2000
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Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
Dieter Bimberg
Journal of Electronic Materials, 1998
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emittlng laser diode with vertical GaAs / GaAJAs quarter . . waveiength multUayers and lateral buried heterostructure
Wei Hsin
2014
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InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
N. Pikhtin
Semiconductors, 2010
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Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate
jacky even
Applied Physics Letters, 2008
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Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well
Han Htoon
2007
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High Performance Quantum Dot Laser WDM Arrays for Optical Interconnects
Chi-Sen Lee
2012
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High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
Chao-Yuan Jin
C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutie´ rrez, R. Royce, M. Hopkinson and D.J. Mowbray, 2006
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Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
Kenneth Kennedy
IEEE Journal of Selected Topics in Quantum Electronics, 2000
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Temperature Characteristics of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
Wei Fan
IEEE Journal of Selected Topics in Quantum Electronics, 2000
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