Effect of Argon–Plasma Treatment on the Electrical and Optical Properties of Sol–Gel Antimony-Doped Tin Dioxide Thin Films Fabricated by Dip Coating (original) (raw)
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Optical properties of spray deposited antimony (Sb) doped tin oxide (SnO 2 ) thin films, prepared from SnCl 2 precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0-4 wt. % of Sb. All the films were deposited on microscope glass slides at the optimized substrate temperature of 400°C. The films are polycrystalline in nature with tetragonal crystal structure. The doped films are degenerate and n-type conducting. The sheet resistance of tin oxide films was found to decrease from 38.22 Ω/ for undoped films to 2.17 Ω/ for antimony doped films. The lowest sheet resistance was achieved for 2 wt. % of Sb doping. To the best of our knowledge, this sheet resistance value is the lowest reported so far, for Sb doped films prepared from SnCl 2 precursor. The transmittance and reflectance spectra for the as-deposited films were recorded in the wavelength range of 300 to 2500 nm. The transmittance of the films was observed to increase from 42 % to 55 % (at 800 nm) on initial addition of Sb and then it is decreased for higher level of antimony doping. This paper investigates the variation of optical and electrical properties of the as-deposited films with Sb doping.
Electric and morphologic properties of SnO2 films prepared by modified sol–gel process
Materials Letters, 2003
Tin dioxide (SnO2) is used in several technological applications such as sensors, catalysts, and electro-optical equipments. Many of these applications involve the use of SnO2 in the form of ceramic thin film. The preparation of SnO2 films has been widely studied and different methods have been proposed to synthesize pure or doped SnO2. In this work, SnO2 films produced by
PROPERTIES OF THIN TRANSPARENT SnO 2 :Sb FILMS
We study the electrical and optical properties of tin dioxide films, produced by the spraying method of aqueous-alcoholic solution of tin tetrachloride with antimony trichloride addition. Results of the influence of the films deposition temperature and the antimony concentration on the resistance, the charge carriers mobility and their concentration, and transmission spectrums are presented.
Tin oxide (SnO 2 ) thin films doped with antimony were grown on plane glass substrates using chemical bath deposition (CBD) technique. Precursor chemicals of stannic chloride and sodium hydroxide were used to supply tin and oxygen ions respectively and triethanolamine (TEA) was added as a complexant. Sb doping was accomplished by adding little quantity antimony chloride that enabled orderly growth of ternary Sn 1-x Sb x O 2 film where 0 < x < 0.1. Synthesized films were annealed at temperatures of between 150 and 350 in steps of 50 for one hour at a time, and the effects on optical and electrical properties of film observed. Such high temperature treatment increased the energy band gap, E g of films annealed at 150 but decreased such gap for films annealed at very high temperatures. Furthermore, the UV-VIS-NIR spectrophotometric analysis of films which provided E g also showed high transmittance (T > 80 %) in visible region and also high absorbance (A > 0.2) in NIR. Annealing also increased electrical conductivity in all the temperatures considered.
2008
Tin dioxide thin films doped with Sb have been prepared by sol-gel dip-coating technique. The effect of an intermediate annealing in its preparation is analyzed through X-ray reflectometry and electron microscopy. These results have shown that the density for films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Although the electrical conductivity is rather low, results of infrared optical transmission have shown that transmission decreases with increase of Sb doping concentration, as predicted by Drude’s theory. Results comparing depositions on different types of substrates are also shown.
Journal of Materials Science, 2005
During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO 2 buffer layer formed on the substrate and N 2 annealing treatment were investigated quantitatively. The deposited ATO thin film was identified as a crystalline SnO 2 phase and the film thickness was about 100 nm/layer at a withdrawal speed of 50 mm/min. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film that was deposited on SiO 2 buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84% and 5.0 × 10 −3 ·cm, respectively. The XPS analysis confirmed that a SiO 2 buffer layer inhibited Na ion diffusion from the substrate, preventing the formation of a secondary phase such as Na 2 SnO 3 and SnO and increasing Sb ion concentration and ratio of Sb 5+ /Sb 3+ in the film. It was found that N 2 annealing treatment leads to the reduction of Sn 4+ as well as Sb 5+ , however the reduction of Sn 4+ is more effective, and consequently results in a decrease in the electrical resistivity to produce excellent electrical properties in the film. C
Characterization of Pure and Antimony Doped SNO2 Thin Films Prepared by the Sol Gel Technique
Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR, 2006
Pure and antimony doped SnO 2 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material SnCl 2 .2H 2 O as a host and SbCl 3 as a dopant. Our experimental results revealed that, the quality of the coated films on the glass depends on process parameters. The effect of annealing temperature, dipping numbers and the dopant concentration on the structural and electrical properties were investigated. Duration of coating and dragging speed for each sample were 3 minutes and 90cm/min respectively. The films Characterization was carried out by X-ray diffraction pattern (XRD) and scanning electron microscopy (SEM). The XRD results showed the amorphous structure of deposited sample at 350°C. Beyond this temperature (350°C), the preferred plane with a random textured shifts to (101). By addition of 25g/lit antimony at 550°C, the preferred plane shifts to (200). The electrical properties were determined by four point probes technique. Addition of 25g/lit antimony at 550°C was reduced the resistivity of the SnO 2 films to 0.94×10-4 (Ωcm).
Applied Surface Science, 2003
Transparent conducting antimony-doped tin oxide (SnO 2 :Sb) films have been prepared on polyimide and Corning 7059 substrates by radio frequency magnetron-sputtering technique at low substrate temperature (30-220 8C). Polycrystalline SnO 2 :Sb films having the rutile structure were deposited with resistivity as low as 3:7 Â 10 À3 O cm on polyimide substrate and 2 Â 10 À3 O cm on glass substrate. The average transmittance exceeded 70.6 and 85.5% in the visible spectrum for 285 and 315 nm thick films deposited on polyimide and glass substrate, respectively. A comparison of the properties for the films deposited on glass and organic substrates was performed.
Journal of Alloys and Compounds, 2015
Recently metal oxide thin films are extensively investigated because of their potential applications in solar energy conversion. In the present paper, Transparent conducting antimony doped tin oxide (Sb:SnO 2) thin films have been deposited by spray pyrolysis technique at various antimony doping concentrations from non-aqueous solvent Propan-2-ol. XRD studies show that all films are polycrystalline with tetragonal crystal structure. The crystallite size observed is in the range 29e37 nm for various Sb doping concentrations. The surface morphology of Sb:SnO 2 thin film is spherical with the continuous distribution of grains. The average transmittance of the undoped and Sb:SnO 2 thin films, measured in the 450e850 nm wavelength is ranging between 70 and 95%. The best results are obtained at 1.5 wt.% Sb doping concentration, which are direct band gap of 3.82 eV, minimum sheet resistance of 5.7 U/cm 2 , lowest resistivity of 3.76 Â 10 À4 U-cm, carrier concentration and mobility of 4.46 Â 10 19 cm À3 and 372 cm 2 V À1 s À1 , respectively.
A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications
A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.