Influence of Annealing Temperature on the Properties of ZnO Thin Films Grown by Sputtering (original) (raw)
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Influence of post-annealing condition on the properties of ZnO films
2013
The study of the properties of zinc oxide (ZnO) films has gained popularity recently due to its potential in a wide range of applications, such as thin-film solar cells, transistors, sensors and other optoelectronic devices. In this work, low cost sol-gel spin coating technique was employed to fabricate the ZnO films. The influences of post-annealing condition on the properties of the ZnO films were investigated. The ZnO films were annealed under ambient, nitrogen and vacuum environments at 450 1C and the environment effects on the ZnO films were compared. Furthermore, the effect of cooling period allowed for the ZnO films after the post-annealing process was examined. The ZnO films were characterized using surface profilometer, atomic force microscopy, X-ray diffractometer, and ultraviolet-visible transmission spectroscopy in order to study the thickness, surface morphology, crystallinity, and optical properties of the ZnO films. The optical band gap of the ZnO films was estimated based on the thickness and the optical transmittance data. These investigations serve to clarify the effects of different post-annealing conditions in order to optimize the properties of the ZnO films.
Influence of the annealing conditions on the properties of ZnO thin films
2001
The effect of annealing treatment (in the presence of different types of atmospheres) on the performances of zinc oxide thin films (intrinsic and doped with In and Al) prepared by spray pyrolysis have been studied, with the aim to determine more adequate conditions to improve the properties of the films. The results show that the annealing treatment leads to substantial changes in the structural, electrical and optical characteristics of ZnO thin films. The most significant improvements were obtained after annealing in forming gas (reduction atmosphere) at 2008C during 2 h. The ZnO:In film after heat treatment was the one that exhibited the lowest resistivity 22 (r55.2310 Vcm) and a high transmittance (T586%).
2016
Thin Al-doped ZnO (AZO) films were deposited by magnetron sputtering on a non-heated quartz substrate. As-deposited samples have a nanocrystalline structure, a high transparency in the visible part of the spectrum, but a relatively low conductivity. After deposition, the films were isochronally annealed for one hour in hydrogen atmosphere at 200, 300 or 400 °C. The influence of such treatment on the structural properties was analysed by GIXRD and correlated with UV-Vis, photoluminescence and impedance measurements. The structural investigation demonstrated that the heat treatment reduces the strain in the material, the volume of the crystal lattice decreases and the crystal size grows. By measuring the optical properties it was shown that heating increases the optical gap and gradually reduces the number of point defects, mostly related to interstitial atoms. As a result of this process, the conductivity at room temperature increased more than 9 orders of magnitude due to an enhancement of the mobility and the concentration of free carriers. The activation energy for defect annihilation was estimated to be about 1 eV and corresponds to the diffusion of interstitial atoms with the annihilation of vacancies. The concentration of free carriers increases due to the activation of the dopants that act as shallow donors.
Research on Chemical …
Zinc oxide thin films have been deposited on glass substrates by the chemical bath deposition method; a surfactant, cetyltrimethylammonium bromide (CTAB); was used as capping agent. The films were annealed at two different temperatures: 200 and 300°C. The structural features were investigated by X-ray diffraction analysis which exhibited hexagonal wurtzite structures along with c-axis orientations. Crystallite size was estimated and found to be around 33-41 nm. The effect of post-deposition thermal annealing on the morphological and optical properties has been investigated by scanning electron microscopy and photoluminescence spectra at room temperature. The band gap energies of uncapped and CTAB-capped ZnO films were found to be 3.28 and 3.48 eV, respectively.
Effect of Annealing Temperature on Structural and, Morphological Properties of Zno Thins Films
In this work, thins films of zinc oxide were deposited on n-type silicon substrates by chemical electrodeposition. The effect of annealing temperature from 200 ° C to 600 ° C, with a step of 100 ° C, on the structural and morphological properties of ZnO layers has been studied. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and contact angle measurements were used to characterize the morphology and structure of ZnO without and with annealing. The XRD patterns of unannealed ZnO thins films indicate the presence of three intense peaks along (100), (002) and (101) planes, while for the annealed ZnO layers the XRD patterns show also the three major peaks but the intensity of these peaks is increased except for a temperature of 600 ° C where is decreased. The comparison of the XRD patterns of the ZnO layers without and with annealing, reveal a shift in the 2θ diffraction angle, the calculation of the crystallinity confirms the obtained results. The contact angle measurements...
INDONESIAN JOURNAL OF APPLIED PHYSICS, 2021
This work investigated the effect of post-annealing treatment on the fabrication of zinc oxide (ZnO) thin film by spraying deposition method. Based on SEM analysis, the annealed ZnO thin film at 400˚C presented better uniformity as compared to the non-annealed film. Further measurement by UV-Vis revealed that the lowest optical band gap energy ( E g ) (3.22 eV) was achieved by 400˚C sample. These results confirmed that post-annealing treatment enhanced the optical and morphological properties of the fabricated ZnO thin film.
MODIFICATION IN OPTICAL PROPERTIES OF ZNO THIN FILM BY ANNEALING
In this work, we have synthesized ZnO thin film on quartz substrate by RF magnetron sputtering method. We annealed these films at three different temperatures of 200 o C, 400 o C and 600 o C. The absorption spectra showed that the band gap of the deposited film was about 3.29 eV. So it confirmed that the film was of ZnO. As temperature increased the band gap of the film decreased. Transmittance spectra revealed that the transparency of the film increased with rise in temperature. Different optical constants such as refractive index, film thickness, band gap, transmittance, extinction coefficient and so on were investigated and compared at different temperatures. Ellipsometry revealed that the thickness of the film was 125 nm.
Influence of annealing on optical properties and surface structure of ZnO thin films
Journal of Crystal Growth, 2006
Thermal annealing effects on optical properties and surface structure of zinc oxide (ZnO) thin films prepared by filtered cathodic vacuum arc technique were investigated by spectroscopic ellipsometry (SE) and atomic force microscopy (AFM). In the SE study, Cauchy model was used to extract the optical constants of ZnO thin films for photon energies below the band gap while point-by-point fitting was used to determine the optical constants of the films for photon energies above the band gap. The influence of annealing on the optical properties, in the photon energy ranging from 1.1 to 5 eV, has been demonstrated. It was found that the values of the refractive index, the reflectance and the real part of the complex dielectric function decrease with increasing annealing time. On the other hand, tapping mode AFM was used to study the surface structure and topography of ZnO thin films. AFM study revealed that annealing roughened the surface of the films and increased the size of grains on the surface. It was observed that the changes in the optical properties were correlated to the changes in the surface structure as a result of annealing.