Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers
Serge Luryi
IEEE Journal of Quantum Electronics, 1996
View PDFchevron_right
Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling
Gregory Belenky, C. Reynolds
IEEE Journal of Quantum Electronics, 1999
View PDFchevron_right
Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: Spectroscopy of 950 nm high energy emission
Weihua Zhuang
IEEE Journal of Quantum Electronics, 1985
View PDFchevron_right
Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells
Chao-Hsin Wu
Japanese Journal of Applied Physics, 2004
View PDFchevron_right
Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers
John Bowers
IEEE Journal of Selected Topics in Quantum Electronics, 1999
View PDFchevron_right
Effect of heterobarrier leakage on the performance of high-power 1.5 μm InGaAsP multiple-quantum-well lasers
Leon Shterengas
2000
View PDFchevron_right
Internal efficiency of semiconductor lasers with a quantum-confined active region
Serge Luryi, Robert Suris
IEEE Journal of Quantum Electronics, 2003
View PDFchevron_right
Theoretical study on intervalence band absorption in InP‐based quantum‐well laser structures
Songcheol Hong
Applied Physics Letters, 1996
View PDFchevron_right
Trends in semiconductor laser design: Balance between leakage, gain and loss in InGaAsP/InP MQW structures
Leon Shterengas
2002
View PDFchevron_right
Effect of the confinement-layer composition on the internal quantum efficiency and modulation response of quantum-well lasers
John Bowers
IEEE Photonics Technology Letters, 2000
View PDFchevron_right
Modification of modal gain in InGaAs-GaAs quantum-well lasers due to barrier-state carriers
Beso Mikhelashvili
IEEE Journal of Selected Topics in Quantum Electronics, 1997
View PDFchevron_right
Direct measurement of lateral carrier leakage in 1.3-mum InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers
Bernd Witzigmann
IEEE Journal of Quantum Electronics, 2002
View PDFchevron_right
Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers
John Bowers
IEEE Journal of Quantum Electronics, 2000
View PDFchevron_right
The Effect of Barrier Composition on the Vertical Carrier Transport and Lasing Properties of 1.55-$mu hbox m$Multiple Quantum-Well Structures
O. Kjebon
IEEE Journal of Quantum Electronics, 2006
View PDFchevron_right
Optical gain and loss in 3 μm diode “W” quantum-well lasers
Dmitrii Donetski, Serge Luryi
Applied Physics Letters, 2002
View PDFchevron_right
Direct measurement of lateral carrier leakage in 1.3-μm InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers
Leon Shterengas
IEEE Journal of Quantum Electronics, 2002
View PDFchevron_right
Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures
S. Luryi
IEEE Transactions on Electron Devices, 1995
View PDFchevron_right
1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
MengChyi Wu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
View PDFchevron_right
Lateral Current Injection (LCI) Multiple Quantum-Well 1.55 m Laser with Improved Gain Uniformity Across the Active Region
Muhammad Nadeem Akram
Optical and Quantum Electronics, 2000
View PDFchevron_right
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
Stanko Tomic
IEEE Journal of Selected Topics in Quantum Electronics, 2002
View PDFchevron_right
Efficiencies in multiquantum well lasers
Ihosvany Camps
Semiconductor Science and Technology, 2002
View PDFchevron_right
Effect of internal optical loss on threshold characteristics of semiconductor lasers with a quantum-confined active region
Serge Luryi
IEEE Journal of Quantum Electronics, 2000
View PDFchevron_right
Experimental characterization of high-speed 155 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers
Muhammad Nadeem Akram, Richard Schatz
Journal of The Optical Society of America B-optical Physics, 2009
View PDFchevron_right
Spectral changes due to carrier induced band gap shrinkage for 675nm AlGaInP multiple quantum well (MQW) laser diodes at room temperatures
santosh chackrabarti
Optik - International Journal for Light and Electron Optics, 2016
View PDFchevron_right
Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs–GaAs Quantum-Well Lasers
Gene Tsvid
IEEE Journal of Quantum Electronics, 2000
View PDFchevron_right
The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm
Fred L Terry
Journal of Crystal Growth, 1992
View PDFchevron_right
Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure
Denis Morris, R. Maciejko
Journal of Applied Physics, 1999
View PDFchevron_right
Simulation of a 1550-nm InGaAsP-InP transistor laser
R. Vafaei
Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 2009
View PDFchevron_right
MOCVD growth of strained multiple quantum well structure for 1.3 μm InAsP/InP laser diodes
Wen-Jeng Ho
Solid-State Electronics, 1999
View PDFchevron_right
Study on InGaAsP–InGaAs MQW-LD With Symmetric and Asymmetric Separate Confinement Heterostructure
Duchang Heo
IEEE Photonics Technology Letters, 2004
View PDFchevron_right