Efficiencies in multiquantum well lasers (original) (raw)

Applied Physics Letters, 1999

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Auger Recombination Processes and Threshold Conditions in Asymmetric-Multiple-Quantum-Well Heterostructure Lasers

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2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers

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Internal efficiency of semiconductor lasers with a quantum-confined active region

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Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

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IEEE Photonics Technology Letters, 2000

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Effect of the confinement-layer composition on the internal quantum efficiency and modulation response of quantum-well lasers

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IEEE Photonics Technology Letters, 1992

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How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers

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Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers

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Efficiencies in multiquantum well lasers (original) (raw)

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