Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications (original) (raw)

Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000

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