IJERT-Evolution of CMOS Technology Past, Present and Future (original) (raw)

Beyond-CMOS Technologies for Next Generation Computer Design

Springer eBooks, 2019

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Research Challenges and Material for Futuristic Cmos Devices

International Journal of …, 2011

Now a days Engineers are involved withproblems ahead below 100nm gate length MOStransistor technology. The downsizing of the MOSdevices results to smaller area, smaller powerconsumption and improvements in performance ofdevice and circuits. The further scaling down ...

CMOS Technology

Using Nano-electronic technologies are rapidly spread in terms of its small size compared with CMOS. However, defect densities in such process are higher than other technologies. A variety of electron devices that may be scaled down to few nanometers have now been demonstrated, including field-effect transistors, quantum interference devices, such as resonant tunneling diodes, single-electron devices, and phase-change devices. Some of these devices have been implemented using molecules, whose synthesis and self-assembly is the preferred method of the bottom-up fabrication. In this paper, a greedy mapping algorithm is presented for the purpose of defect the tolerance in Nano-electronic systems. As expected results of such implementation, both time complexity and the amount of free defect subsets should be enhanced compared with old results.

Chapter 9 3 D Fabrication Options for High-Performance CMOS Technology

2008

The last several decades have seen an incredible increase in the functionality of computational systems. At its core, this capability has been driven by the scaling of semiconductor devices, from fractions of millimeters in the 1960s to tens of nanometers in today’s technologies. The scaling has enabled the number of transistors on a single chip to correspondingly grow at a geometric rate, roughly doubling every 18 months; a trend is that now referred to as Moore’s law [1]. The impact of this trend cannot be underestimated and the resulting increase in computational capacity has had major impacts on almost every facet of society. For this reason, there is a tremendous push to continue along these same trends. However, several serious roadblocks exist. The first is the limits to lithographic scaling. The second is that power densities will not allow reliable systems to be fabricated even if lithographic scaling could continue. Therefore, it becomes a big challenge to increase system ...

The Challenges of Advanced CMOS Process from 2D to 3D

The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.