A 3.5 GHz packaged medium power amplifier using GaAs PHEMT (original) (raw)
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A 3.5 GHz medium power amplifier using 0.15 µm GaAs PHEMT for WiMAX applications
2009
This paper presents the design and measurement of a single-ended medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for 802.16 WiMAX applications. At a supply voltage of 3.0 V and 3.5 GHz operating frequency, a single-ended MPA achieves input return loss of 14.11 dB, output return loss of 12.38 dB, small-signal gain (S21) of 8.34 dB, P1dB of 16.81 dBm, power gain of 6.81 dB and the PAE of 16.74%. The die size of this amplifier is 1.2 mm à 0.7 mm. The maximum current, Imax is 80.70 mA and the power consumption of the device is 242.10 mW.
A 2.4 GHz packaged power amplifier using GaAs PHEMT technology
2011
This paper describes the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier for wireless LA applications in the 2.4GHz band. The power amplifier (PA) is designed using 0.15µ µ µ µm GaAs power PHEMT technology. The die size of this PA is 1.2mm x 0.7mm and this PA is also offered in 16-pin QF package. With only 3.0 V of drain voltage (V DS ), the packaged PA exhibits an output power at 1dB gain compression (P1dB) of 14.01 dBm, Power-Added Efficiency (PAE) of 31.70% and gain of 7.51 dB, respectively. The maximum current, Imax of this packaged amplifier is 77.90mA and the power consumption for the device is 233.70mW.
2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications
2010
This paper describes the design and measurement of a medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for wireless application. At 2.4 GHz and 3.0 V of VDS, a fabricated MPA exhibits a P1dB of 15.20 dBm, PAE of 12.70% and gain of 9.70 dB. The maximum current, Imax is 84.40 mA and the power consumption for this device is 253.20 mW. The die size of this amplifier is 1.2 mm × 0.7 mm.
2.4 GHz medium power amplifier for wireless LAN applications using GaAs PHEMT
2010
A 2.4GHz medium power amplifier (MPA) using 0.15μm GaAs PHEMT technology for wireless local area network (LAN) applications is demonstrated. At 3.0 V of drain voltage (VDS), a fabricated MPA exhibits the output power at 1dB gain compression (P1dB) of 15.20 dBm, power-added efficiency (PAE) of 12.70% and gain of 9.70 dB, respectively. The maximum current, Imax of this amplifier is 84.40mA and the power consumption for the device is 253.20mW.
Microelectronics International, 2010
Purpose -The purpose of this paper is to discuss medium-power amplifier (MPA) design using parasitic-aware core-based approach. Design/methodology/approach -This paper discusses a core-based design approach, which can also deliver multi-band radio frequency integrated circuit. Findings -A fabricated 3.5 GHz MPA achieved a P1dB of 16.81 dBm, power-added efficiency (PAE) of 16.74 percent and gain of 6.81 dB at the 10 dBm of input power under a low-power supply of 3 V. The maximum current, I max is 80.7 mA and the power consumption of the device is 242.10 mW. A fabricated 2.4 GHz MPA achieved a P1dB of 14.83 dBm, PAE of 11.73 percent and gain of 9.83 dB at the 5.0 dBm of input power under a low-power supply of 3.0 V. The maximum current, I max is 84.4 mA and the power consumption for this device is 253.20 mW.
33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)
A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth=-0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 % at 5 V under Vgs=0 V, G L =14.5 dB, OIP3=37.5 dBm.
60 GHz power amplifier with 57.9% peak PAE in 0.15 μm PHEMT technology
2019
In this paper, a 60 GHz high efficiency power amplifier (PA) with integrated input and output matching is presented. The designed PA uses a 0.15 μm gate length AsGa PHEMT (Pseudomorphic High Electron Mobility Transistor) process. The power amplifier achieves a peak power gain of 17.8 dB and a maximum single-ended output power of 14.34 dBm with 57.95% of power-added efficiency (PAE) at 60 GHz. These results are the best combination of output power and efficiency reported for an MMIC (Monolithic Microwave Integrated Circuit) AsGa device at V-band. The designed power amplifier has a 3-dB bandwidth of 7 GHz.
4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station
30th European Microwave Conference, 2000, 2000
A three stage amplifier has been developed for PCS, EDGE and W-CDMA applications. Using the MESFET GaAs process of the Fujitsu foundry, we achieved a typical 30dB gain and 4 Watts output power. The input matches for a 50ohm system and the output used a pre-match circuit in order to increase its low impedance. This amplifier has a frequency range of 1.7Ghz to 2.3 Ghz. I.
X-band Power Amplifier using pHEMT GaAs Technology with Harmonic Tuning
International Journal of Innovative Research in Science, Engineering and Technology, 2018
This paper describes a new method to the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier (PA) for application in communication circuit systems that increase efficiency, output power, gain, small return loss (input & output) and low cost in the circuit. The proposed method is based on a combination of a GaAs power amplifier along with power divider/combiner. The power amplifier (PA) is designed using 0.1µm GaAs power pHEMT technology. The combination and design of the proposed power amplifier ensue gain of over 21dB in the 8 to 12GHz (X-band) frequency bandwidth. With only 3.0 V of drain voltage (VDS) to driver and 4.0V of drain voltage to 2nd stage, the PA exhibits an output power at 1dB gain compression (P1dB) of 23.059dBm, and gain of 22.959 dB, respectively. The maximum current, Imax of this packaged amplifier is 49mA and the power consumption for the device is 650mW. This method have desirable amplitude for the output signal in the fundamental and 2nd harmonics.