Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching (original) (raw)
Selective growth of InGaAs on nanoscale InP islands
Harri Lipsanen
Applied Physics Letters, 1994
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Self-assembling InAs and InP quantum dots for optoelectronic devices
Werner Winter
Thin Solid Films, 2000
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Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
gerard GUILLOT
Applied Physics Letters, 2001
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Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates
Jae-Hyun Ryou
Journal of Electronic Materials, 2001
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In-situ grown dots of InP on GaAs and GaInP-a comparison
D. Hessman
Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996
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Site-controlled growth of InP/GaInP quantum dots on GaAs substrates
Sven Hofling
Nanotechnology, 2012
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Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
Chương Trần
Physical Review B, 1993
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Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited
A. Corre, N. Bertru, Ibrahim M Alghoraibi
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Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition
Jae-Hyun Ryou
Journal of Electronic Materials, 2003
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Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001
Eliezer Finkman
Physical Review B, 2004
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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
JinSoo Kim
Journal of Crystal Growth, 2004
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Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)
Richard Noetzel
Journal of Crystal Growth, 2007
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Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
Bassem Salem
Physical Review B, 2002
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Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates
Pierre Basmaji
Superlattices and Microstructures, 1997
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Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy
Harri Lipsanen
Applied Physics Letters, 1995
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Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates
David Gershoni
Applied Physics Letters, 2004
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Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
Guido Chiantoni
Micron, 2000
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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
Somsak Panyakeow
Nanoscale Research Letters, 2011
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Structural and optical properties of InP quantum dots grown on GaAs(001)
Monica Cotta
Journal of Applied Physics, 2007
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Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces
E. Grilli
1997
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Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy
Sven Hofling
Nanotechnology, 2012
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Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAs(P)/InP quantum dots
Harri Lipsanen
Nanotechnology, 2005
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Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD
Fanghai Zhao
Optical and Quantum Electronics, 1998
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InAs quantum dots grown on InAlGaAs lattice matched to InP
Patricia Lustoza de Souza
Journal of Crystal Growth, 2003
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Growth kinetics effects on self-assembled InAs��� InP quantum dots
Brij Mohan Arora
2005
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Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates
GENESIS AUGUSTINE
Applied Surface Science, 2002
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Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕ InP (001) quantum dots grown by metalorganic chemical vapor deposition
Pilkyung Moon
Applied Physics Letters, 2005
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InAs quantum dot growth on planar InP (1 0 0) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer
Richard Noetzel
Journal of Crystal Growth, 2011
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Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots
Rita Magri
Physical Review B, 2008
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Strong carrier confinement in self-assembled InAs/InP[001] elongated quantum islands emitting at 1.5 μm
Bassem Salem
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002
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