Carbon nanotube field-effect transistors with molecular interface (original) (raw)
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CARBON NANOTUBE FIELD-EFFECT TRANSISTORS
International Journal of High Speed Electronics and Systems, 2006
This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.
Molecular Electronics with Carbon Nanotubes
Accounts of Chemical Research, 2002
Carbon nanotubes have unique properties that make them a most promising system on which to base molecular electronics. We briefly review the electrical characteristics of carbon nanotubes, and then focus on carbon nanotube field-effect transistors (CNT-FETs). Procedures by which hole-transport, electron-transport and ambipolar CNTFETs can be fabricated are presented, and their electrical characteristics are discussed and compared with those of Si MOSFETs. Ways to fabricate arrays of CNTFETs are also demonstrated, and electron and hole CNTFETs are integrated to form complementary logic circuits.
Overview of Carbon Nanotube Field-Effect Transistors
2013
An overview of the different types of CNTFET which have large potential to semiconductor industry and microelectronic systems is presented. The present paper is focused on the structure of the various types of CNTFET and their technology characteristics depending on the specific CNT used: single-walled or
Novel Structures for Carbon Nanotube Field Effect Transistors
International Journal of Modern Physics B, 2009
A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrödinger–Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity.
Single- and multi-wall carbon nanotube field-effect transistors
Applied Physics Letters, 1998
We fabricated field-effect transistors based on individual single-and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations-in our case a collapsed tube-can make them operate as field-effect transistors. © 1998 American Institute of Physics. ͓S0003-6951͑98͒00143-0͔
Carbon Nanotubes Field Effect Transistor : A Review
2015
In this paper we have focused on the carbon nano tube field effect transistor technology. The advantages of CNTFET over MOS technology are also discussed. The structure and types of CNTFET are given in detail along with the variation of threshold voltage with respect to the alteration in CNT diameter. The characteristics curve between gate to source current and drain to source voltage is plotted. Various fixed and variable parameters of CNT are also focused.
c World Scientic Publishing Company NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
2007
A carbon nanotube eld eect transistor (CNTFET) has been studied based on the Schrodinger{Poisson formalism. To improve the saturation range in the output charac-teristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (V ds) can be used, which results in higher output power. In the digital circuits, higher V ds increases noise immunity.
IEEE Transactions on Device and Materials Reliability, 2000
In this paper, we present the unique features exhibited by a proposed structure of coaxially gated carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions using the self-consistent and atomistic scale simulations, within the nonequilibrium Green's function formalism. In this novel CNTFET structure, three adjacent metal cylindrical gates are used, where two side metal gates with lower workfunction than the main gate as an extension of the source/drain on either side of the main metal gate are biased, independent of the main gate, to create virtual extensions to the source and the drain and also to provide an effective electrical screen for the channel region from the drain voltage variations. We demonstrate that the proposed structure of CNTFET shows improvement in device performance focusing on leakage current, on-off current ratio, and voltage gain. In addition, the investigation of short-channel effects for the proposed structure shows improved drain-induced barrier lowering, hot-carrier effect, and subthreshold swing, all of which can affect the reliability of CMOS devices.