Comparison of strain relaxation in InGaAsN and InGaAs thin films (original) (raw)

Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy

Itaru Kamiya

Journal of Crystal Growth, 2011

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Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures

Karen L Kavanagh

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Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

Luisa Gonzalez

Applied Physics Letters, 2002

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In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms

Itaru Kamiya

Applied Physics Express, 2009

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Strain relaxation in InGaAs lattice engineered substrates

P. Chavarkar

Journal of Electronic Materials, 2000

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Strain relaxation by 〈100〉 misfit dislocations in dilute nitride InxGa1-xAs1-yNy/GaAs quantum wells

Alexey Koveshnikov

physica status solidi (a), 2005

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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

Eric Chason, R. Beresford

Journal of Crystal Growth, 2003

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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

Anna Vila, A. Cornet, J. Morante

Journal of Applied Physics, 1997

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Strain relaxation mechanism of InGaN thin film grown on m -GaN

Yuhuai Liu, Takashi Hanada

physica status solidi (c), 2011

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Non-uniform strain relaxation in InxGa1−xAs layers

Luisa Gonzalez

Solid-State Electronics, 1996

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Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A

Henry Weinberg

Surface Science, 2003

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Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates

Yoshiki Sakuma

Scientific Reports, 2020

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Strain relaxation in AlN epitaxial layers grown on GaN single crystals

Antoine BARBIER

Journal of Crystal Growth, 1999

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Dependence of Curie temperature on surface strain in InMnAs epitaxial structures

Ivo Vavra

Applied Surface Science, 2010

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Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

Pablo Vaccaro

Journal of Crystal Growth, 1995

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Partial strain relaxation in (In, Ga) As epilayers on GaAs by means of twin formation

Peter Moeck

Journal of crystal …, 1999

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Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

Christian Lavoie

Applied Physics Letters, 1995

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Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

youssef tahri

Applied Physics Letters, 1996

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Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress

giancarlo Salviati

Applied Surface Science, 2002

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Plastic strain relaxation of nitride heterostructures

J. Rouvière

Journal of Applied Physics, 2004

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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers

narciso gambacorti

1994

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Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

Richa Sharma

Physica Status Solidi (a), 2006

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Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

Louis Guido

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Strain relaxation in III–V semiconductor heterostructures

Peter Goodhew

Micron, 1999

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Strain accommodation and interfacial structure of AlN interlayers in GaN

Ph. Komninou

Crystal Research and Technology, 2009

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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A

Toru Akiyama

Condensed Matter

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Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs

J. Serafińczuk

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Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling

A. Siddiqui, Anand Pathak

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998

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Residual strain measurements in InGaAs metamorphic buffer layers on GaAs

Luca Seravalli

European Physical Journal B, 2007

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Effect of Strain on Alloying in InAs/GaAs Heterostructure

Yoshiyuki Kawazoe

Japanese Journal of Applied Physics, 2002

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