Tailoring of high-temperature photoluminescence in InAs∕ GaAs bilayer quantum dot structures (original) (raw)
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
E. Grilli
Applied Physics Letters, 2000
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Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs
BAOLAI LIANG
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Temperature study of the photoluminescence of a single InAs/GaAs quantum dot
V. Donchev
physica status solidi (c), 2004
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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures
Aditya Patel
Superlattices and Microstructures, 2013
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The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
Mihail Dumitrescu
Nanoscale Research Letters, 2012
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Thermally-activated effects on photoluminescence line shape of InAs/GaAs quantum dot heterosystems
Tzer-En Nee
The European Physical Journal Applied Physics, 2007
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Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs
Nikolay Bert
physica status solidi (b), 2019
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Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing
Nilanjan Halder
Applied Physics A: Materials Science & Processing, 2011
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Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots
Jawher Jawher
Materials Science and Engineering: B, 2021
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Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots
Nilanjan Halder
Materials Research Bulletin, 2012
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Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
Bouraoui ILAHI
physica status solidi (a), 2003
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Spectroscopy of sub-wetting layer states in InAs/GaAs quantum dot bi-layer systems
georgiy tarasov
Semiconductor Science and Technology, 2007
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Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness
Bouraoui ILAHI
physica status solidi (c), 2005
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Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy
G.H. K
Applied Science and Convergence Technology, 2019
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Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
A. Kosogov
Applied Physics Letters, 1996
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Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
Morgan Ware
Nanoscale Research Letters
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Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
Sandro Martini
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Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure
Joel Huerta
Acta Physica Polonica A, 2016
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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures
Nurul Fadzlin Hasbullah
2009
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Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots
Ridha Mghaieth
Optical and Quantum Electronics, 2017
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Photoluminescence from low temperature grown InAs∕GaAs quantum dots
Richard Noetzel
Applied Physics Letters, 2007
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Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (311)B and (100) GaAs substrates and coated with gold nanoparticles
Y. Gobato
Physica E: Low-dimensional Systems and Nanostructures, 2013
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Thermal induced carrier’s transfer in bimodal size distribution InAs/GaAs quantum dots
Bouraoui ILAHI
Results in Physics, 2018
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Effect of doping level on high-temperature operation of InAs/GaAs quantum dot infrared photodetectors
Dai Nguyen Tien, Tien Dai NGUYEN
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Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage
Nilanjan Halder
Opto-Electronics Review, 2010
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Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures
Nikolay Bert
Semiconductors, 2004
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Annealing of In 0.45Ga 0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices
souvik kundu
Solid State Communications, 2011
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Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices
Miroslav Mikolasek, M. Missous
Journal of Semiconductors, 2014
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The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
Luca Seravalli
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Enhancement of the Photoluminescence Intensity of a Single InAs/GaAs Quantum Dot by Separate Generation of Electrons and Holes
Veselin Todorov Donchev
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Carrier Transfer Effects and Thermal Activation Behaviors in the Photoluminescence of In (Ga) As Self-assembled Quantum Dots
Jen-inn Chyi
2002
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