Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots (original) (raw)
Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures
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Optics Express, 2007
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Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
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Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb
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Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures
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Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures
Sergei Ostapenko
Journal of Physics: Conference Series, 2007
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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
Huiyun Liu
Applied Physics Letters, 1996
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Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs
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physica status solidi (b), 2019
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Photoluminescence variation in InAs quantum dots embedded in InGaAs/AlGaAs quantum wells at thermal annealing
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Physica E: Low-dimensional Systems and Nanostructures, 2013
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Ex-Situ Thermal Treatment Effects on the Temperature Dependent Carriers Dynamics in InAs/InGaAs/GaAs Quantum Dots
Larbi Sfaxi
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Time-resolved optical characterization of InGaAs/GaAs quantum dots
John Bowers
Applied Physics Letters, 1994
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Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness
Bouraoui ILAHI
physica status solidi (c), 2005
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Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots
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Materials Science and Engineering: B, 2021
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Dependence on temperature of homogeneous broadening of InGaAs/InAs/GaAs quantum dot fundamental transitions
W. Ouerghui
Physica E: Low-dimensional Systems and Nanostructures, 2005
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The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures
Luca Seravalli
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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
Bouraoui ILAHI
Applied Physics A, 2005
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InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic
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Journal of Nanoparticle Research, 2011
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Temperature study of the photoluminescence of a single InAs/GaAs quantum dot
V. Donchev
physica status solidi (c), 2004
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Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW
T. Torchynska
Surface Science, 2003
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Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
Alexander Tonkikh
Technical Physics Letters, 2002
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Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature
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Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots
Charlene Lobo
Applied Physics Letters, 1998
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InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties
BAOLAI LIANG
Nanotechnology, 2006
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Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
E. Grilli
Applied Physics Letters, 2000
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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures
Nurul Fadzlin Hasbullah
IEEE Journal of Quantum Electronics, 2009
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Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
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Journal of Crystal Growth, 2003
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Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing
Bouraoui ILAHI
Materials Science and Engineering: C, 2006
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Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells
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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
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Nanoscale Research Letters, 2011
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Photoluminescence from low temperature grown InAs∕GaAs quantum dots
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Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices
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Solid State Communications, 2011
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Excited states and energy relaxation in stacked InAs/GaAs quantum dots
Dieter Bimberg
Physical Review B, 1998
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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission
Joel Huerta
Acta Physica Polonica A, 2017
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Tailoring of high-temperature photoluminescence in InAs∕ GaAs bilayer quantum dot structures
georgiy tarasov
2005
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