Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots (original) (raw)

Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures

Yu. I I Mazur, B. Liang, Morgan Ware

Optics Express, 2007

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Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots

Jen-inn Chyi

Japanese Journal of Applied Physics, 1999

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Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots

Dieter Bimberg

Journal of Crystal Growth, 1998

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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Tai-Yuan Lin

Materials Science and Engineering: B, 2010

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Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb

Joaquín García

Applied Physics Letters, 2005

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Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures

Georgiy Polupan

Journal of Materials Science: Materials in Electronics, 2017

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Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

Sergei Ostapenko

Journal of Physics: Conference Series, 2007

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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

Huiyun Liu

Applied Physics Letters, 1996

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Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs

Nikolay Bert

physica status solidi (b), 2019

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Photoluminescence variation in InAs quantum dots embedded in InGaAs/AlGaAs quantum wells at thermal annealing

Ingri Jazmin Guerrero Moreno

Physica E: Low-dimensional Systems and Nanostructures, 2013

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Ex-Situ Thermal Treatment Effects on the Temperature Dependent Carriers Dynamics in InAs/InGaAs/GaAs Quantum Dots

Larbi Sfaxi

Crystals, 2018

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Time-resolved optical characterization of InGaAs/GaAs quantum dots

John Bowers

Applied Physics Letters, 1994

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Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness

Bouraoui ILAHI

physica status solidi (c), 2005

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Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots

Jawher Jawher

Materials Science and Engineering: B, 2021

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Dependence on temperature of homogeneous broadening of InGaAs/InAs/GaAs quantum dot fundamental transitions

W. Ouerghui

Physica E: Low-dimensional Systems and Nanostructures, 2005

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The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures

Luca Seravalli

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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Bouraoui ILAHI

Applied Physics A, 2005

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InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

Bouraoui ILAHI

Journal of Nanoparticle Research, 2011

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Temperature study of the photoluminescence of a single InAs/GaAs quantum dot

V. Donchev

physica status solidi (c), 2004

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Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

T. Torchynska

Surface Science, 2003

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Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures

Alexander Tonkikh

Technical Physics Letters, 2002

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Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature

Alexander Tonkikh

Semiconductors, 2003

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Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots

Charlene Lobo

Applied Physics Letters, 1998

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InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

BAOLAI LIANG

Nanotechnology, 2006

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Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots

E. Grilli

Applied Physics Letters, 2000

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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

Nurul Fadzlin Hasbullah

IEEE Journal of Quantum Electronics, 2009

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Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Jørn Hvam

Journal of Crystal Growth, 2003

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Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing

Bouraoui ILAHI

Materials Science and Engineering: C, 2006

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Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

Ingri Jazmin Guerrero Moreno

Journal of Luminescence, 2014

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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

Somsak Panyakeow

Nanoscale Research Letters, 2011

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Photoluminescence from low temperature grown InAs∕GaAs quantum dots

Richard Noetzel

Applied Physics Letters, 2007

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Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices

Nilanjan Halder

Solid State Communications, 2011

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Excited states and energy relaxation in stacked InAs/GaAs quantum dots

Dieter Bimberg

Physical Review B, 1998

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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

Joel Huerta

Acta Physica Polonica A, 2017

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Tailoring of high-temperature photoluminescence in InAs∕ GaAs bilayer quantum dot structures

georgiy tarasov

2005

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