Effect of Surface and Grain-Boundary Diffusion on Interconnect Reliability (original) (raw)

Grain boundary crack growth in interconnects with an electric current

Tze-Jer Chuang, Sanboh Lee

Materials Science and Engineering: B, 2001

View PDFchevron_right

Morphological evolution of voids by surface drift diffusion driven by capillary, electromigration, and thermal-stress gradients induced by steady-state heat flow in passivated metallic thin films and flip chip solder joints. I. Theory

Tarik Ogurtani

Journal of Applied Physics, 2008

View PDFchevron_right

Grain Size And Cap Layer Effects On Electromigration Reliability Of Cu Interconnects: Experiments And Simulation

Shinichi Ogawa

2010

View PDFchevron_right

Modeling of Grain Structure Evolution and its Impact on the Reliability of Al(Cu) Thin Film Interconnects

Harold Frost

MRS Proceedings, 1997

View PDFchevron_right

Reliability degradation with electrical, thermal and thermal gradient stress in interconnects

Randy Geiger

2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

View PDFchevron_right

Grain Structure Statistics in As-Patterned and Annealed Interconnects

Harold Frost

MRS Proceedings, 1998

View PDFchevron_right

Electromigration-induced void grain-boundary interactions: The mean time to failure for copper interconnects with bamboo and near-bamboo structures

Tarik Ö Ogurtani

Journal of Applied Physics, 2004

View PDFchevron_right

Grain boundary grooving and cathode voiding in bamboo-like metallic interconnects by surface drift diffusion under the capillary and electromigration forces

Tarik Ogurtani

Journal of Applied Physics, 2005

View PDFchevron_right

Morphological Evolution of Intragranular Void under the Thermal-Stress Gradient Generated by the Steady State Heat Flow in Encapsulated Metallic Films: Special Reference to Flip Chip Solder Joints

Tarik Ogurtani

Solid State Phenomena, 2008

View PDFchevron_right

Voiding induced stress redistribution and its reliability implications in metal interconnects

Yu-lin Shen

Acta Materialia, 2000

View PDFchevron_right

A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics

Giorgio De Nunzio

Vlsi Design, 2001

View PDFchevron_right

Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

Roy Geiss

Metallurgical and Materials Transactions A-physical Metallurgy and Materials Science, 2007

View PDFchevron_right

Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects

Tomoji Nakamura

Japanese Journal of Applied Physics, 2006

View PDFchevron_right

Reliability modeling of metal interconnects with time-dependent electrical and thermal stress

Randy Geiger

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS), 2012

View PDFchevron_right

Stress‐Induced Anisotropy of Electromigration in Copper Interconnects

Johann Cervenka

2009

View PDFchevron_right

The Influence of Grain Structure on the Reliability of Narrow Al-Based Interconnects

Choong-un Kim

MRS Proceedings, 1995

View PDFchevron_right

Damage mechanics of electromigration in microelectronics copper interconnects

Cemal Basaran

View PDFchevron_right

Microstructure Evolution during Electric Current Induced Thermomechanical Fatigue of Interconnects | NIST

Roy Geiss

2005

View PDFchevron_right

Analysis of grain-boundary structure in Al–Cu interconnects

John Sanchez

Journal of Applied Physics, 1997

View PDFchevron_right

Grain boundary misorientation angles and stress-induced voiding in oxide passivated copper interconnects

Robert Keller

Applied Physics Letters, 1997

View PDFchevron_right

The influence of microstructure on the probability of early failure in aluminum-based interconnects

Vincent Dwyer

Journal of Applied Physics, 2004

View PDFchevron_right

On the electrically induced grain boundary migration driving force [grain boundary resistivity, electromigration, metallic films]

Rand Dannenberg

1996

View PDFchevron_right

Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach

Ron Gutmann

Microelectronic Engineering, 2007

View PDFchevron_right

Electromigration in thin-film interconnection lines: models, methods and results

BRUNO NERI

Materials Science Reports, 1991

View PDFchevron_right

Modeling the electromigration failure time distribution in short copper interconnects

Vincent Dwyer

Journal of Applied Physics, 2008

View PDFchevron_right

Microstructural and surface effects on electromigration failure mechanism in Cu interconnects

Alexander Palevski

Microelectronics Reliability, 1997

View PDFchevron_right

Thermomechanical Reliability Challenges For 3D Interconnects With Through-Silicon Vias

Ehrenfried Zschech, Shinichi Ogawa

2010

View PDFchevron_right

Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects

Michalis Loupis, John Avaritsiotis

Active and Passive Electronic Components, 1994

View PDFchevron_right

Thermomechanical reliability of through-silicon vias in 3D interconnects

Kuan Hsun Lu

2011 International Reliability Physics Symposium, 2011

View PDFchevron_right

Analysis of diffusional stress relaxation in submicron Cu interconnect structures using the model with enhanced vacancy diffusivity in grain boundary region

Igor Tsukrov

High Performance Structures and Materials III, 2006

View PDFchevron_right

Observation and Modelling of Electromigration-Induced Void growth in Al-Based Interconnects

Stefan Bader

MRS Proceedings, 1993

View PDFchevron_right

High‐resolution determination of the stress in individual interconnect lines and the variation due to electromigration

Zishun LIU

1995

View PDFchevron_right

Modeling Process Impact on Cu/Low k Interconnect Performance and Reliability

Xiaopeng Xu

2006 16th Biennial University/Government/Industry Microelectronics Symposium, 2006

View PDFchevron_right