A CMOS low noise amplifier for impulse radio ultra-wideband applications (original) (raw)
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Informacije MIDEM – Journal of Microelectronics, electronic components and materials , 2017
The design of an ultra-wideband low noise amplifier is presented in this paper. Schematic level design is described, as well as integrated circuit layout techniques applied and post-layout simulation results. After fabrication using the standard 130 nm CMOS process node, on-chip characterization has been performed. The simulation and characterization results are presented analyzed and discussed in detail.
International Journal of Reconfigurable and Embedded Systems (IJRES), 2025
Ultra-wide band (UWB) is a wireless technology deployed for transmitting data at high rates over short distances. Similar to Wi-Fi and Bluetooth, UWB is a radio frequency (RF) technology that operates via radio waves. To remove minor noise and glitches, low noise amplifier (LNA) is required because it amplifies weak signals without significantly adding noise. However, UWB has multiple frequencies that require coefficient change due to frequency variations. When low-pass filter (LPF) is employed to solve this, updates are necessary to manage delay and power because the LPF feedback is connected to LNA to increase delay and power consumption. In this research, LNA with a pre-distortion architecture is proposed to remove minor noises and small glitches. It is processed by using pre-distortion as an active component which reduces delay and power consumption in UWB. The pre-distortion process operates in the subthreshold voltage range by providing a transistor to each frequency as input, inturn effectively reducing the noise. The proposed LNA with pre-distortion architecture is developed on 180-nm complementary metal-oxide semiconductor (CMOS) technology using Cadense ASIC tool. The proposed architecture achieves a noise figure (NF) of 2.16 dB and less power consumption of 43.06×10-6 W when compared to the existing techniques namely, cascade amplifiers, W-band LNA, reflectionless receiver (RX), and broadband RF receiver front-end circuits.
CMOS Ultra-Wideband Low Noise Amplifier Design
International Journal of Microwave Science and Technology, 2013
This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 m CMOS technology process.
AN ULTRA LOW VOLTAGE, WIDEBAND LOW NOISE AMPLIFIER DESIGN TECHNIQUE
Low noise amplifier (LNA) is a vital segment of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, critical execution measurements, for example, power dissipation, s-parameter, noise figure and linearity have been carefully researched and described for the proposed LNA. This work introduces a low noise amplifier (LNA) utilizing current reuse system for wideband receiver. The current reuse strategy is routed to optimize noise performance and power efficiency while keeping up a decent power gain and input/output matching. An inductive peaking configuration is effectively utilized in the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Inductive peaking in the feedback loop is utilized to improve the bandwidth and noise performance of LNA. Key Words: Current reuse, inductive series peaking, low-noise amplifier (LNA), ultra-low voltage (ULV), ultra-wideband (UWB). International Research Journal of Engineering and Technology (IRJET) e
Design of Low Noise Amplifier for Uwb Radio Receiver
An Ultra Wide Band CMOS Low Noise Amplifier (LNA) design is presented in this paper. Due to low power consumption and extremely high data rates the UWB system is bound to be popular in the end user market. The LNA is the first stage after antenna in an UWB transceiver. The LNA is accountable for providing enough gain to the signal with the bare minimum distortion. In this work we have designed and evaluated the performance of a complementary metal oxide semiconductor (CMOS) low noise amplifier (LNA) for 3.1-10.6 GHZ frequency band. Agilent's ADS tool has been used to simulate the designed LNA and is proved to have better noise figure as well as input matching. The designed LNA provides the low S 11 , S 22 , and noise figure. The gain achieved is 6 dB and the response over the band of interest is almost flat.
A CMOS Ultra-Wideband Receiver for Low Data-Rate Communication
IEEE Journal of Solid-state Circuits, 2007
A low-power impulse-radio ultra-wideband receiver is demonstrated for low data-rate applications. A topology selection study demonstrates that the quadrature analog correlation is a good receiver architecture choice when energy consumption must be minimized. The receiver operates in the 3.1-5 GHz band of the UWB FCC spectrum mask on channels of 500 MHz bandwidth. The pulse correlation operation is done in the analog domain in order to reduce the ADC sampling speed down to the pulse repetition rate, thereby reducing the power consumption. The receiver comprises a low-noise amplifier with full on-chip matching network, an RF local oscillator generation, two quadrature mixers, two analog baseband chains followed by two ADCs, and a clock generation network. The receiver is implemented in 0.18 m CMOS technology and achieves 16 mA power consumption at 20 Mpulses/s pulse repetition rate. . The work of M. Verhelst was supported by a fellowship from the Fund for Scientific Research-Flanders (Belgium) (FWO-Vlaanderen) J. Ryckaert and P. Wambacq are with IMEC, 3001 Leuven Belgium, and also with Vrije Universiteit Brussel, 1050 Elsene, Belgium (e-mail: ryckj@imec.be).
Analysis of RF CMOS Low Noise Amplifier at Different Operating Frequency & Technology
2015
Gunjan S. Gotmare 1, Mr. Arpit Yadav 2, Dr.Sanjay Badjate 3 1 Student, Department of Electronic Engineering, S. B. Jain Institute Of Technology Management & Research, Maharashtra, India 2Lecturer, Department of Electronic Engineering, S. B. Jain Institute Of Technology Management & Research, Maharashtra, India 3Vice Principal, Department of Electronic Engineering, S. B. Jain Institute Of Technology Management & Research, Maharashtra, India
A UWB CMOS low-noise amplifier with noise reduction and linearity improvement techniques
Microelectronics Journal, 2015
In this paper, a highly linear CMOS low noise amplifier (LNA) for ultra-wideband applications is presented. The proposed LNA improves both input second-and third-order intercept points (IIP2 and IIP3) by canceling the common-mode part of all intermodulation components from the output current. The proposed LNA structure creates equal common-mode currents with the opposite sign by cascading two differential pairs with a cross-connected output. These currents eliminate each other at the output and improve the linearity. Also, the proposed LNA improves the noise performance by canceling the thermal noise of the input and auxiliary transistors at the output. Detailed analysis is provided to show the effectiveness of the proposed LNA structure. Post-layout circuit level simulation results using a 90 nm RF CMOS process with Spectre-RF reveal 9.5 dB power gain,-3 dB bandwidth (BW À 3dB) of 8 GHz from 2.4 GHz to 10.4 GHz, and mean IIP3 and IIP2 of þ13.1 dBm and þ42.8 dBm, respectively. The simulated S 11 is less than À 11 dB in whole frequency range while the LNA consumes 14.8 mW from a single 1.2 V power supply.