Noise behavior of SiGe n-MODFETS (original) (raw)

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1/f noise in Si and si/sub 0.7/Ge/sub 0.3/ pMOSFETs Cover Page

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Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs Cover Page

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate Cover Page

Low frequency noise in Si and Si/SiGe/Si PMOSFETs

Measurements of 1/f noise in Si and Si_0.64_Ge_0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.

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Low frequency noise in Si and Si/SiGe/Si PMOSFETs Cover Page

High-Performance SiGe MODFET Technology

MRS Proceedings, 2004

ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

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High-Performance SiGe MODFET Technology Cover Page

A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range

2002

A new, analytic large-signal model for N-channel SiGe Modulation Doped Field Ef-fect Transistors (MODFETs) is presented. The model is based on a non-linear equivalent circuit and can be employed to fit the characteristics in the sub-threshold, linear and saturation operating region from DC to high frequencies. In addition to the non-linear I ds current source, gate/drain-and gate/source capacitance elements, it contains a dispersion model to account for the observed low-frequency dispersion effects in the devices.

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A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range Cover Page

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Study of current fluctuations in deep-submicron Si/SiGe n-channel MOSFET: impact of relevant technological parameters on the thermal noise performance Cover Page

High speed Si/SiGe and Ge/SiGe MODFETs

2003

The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

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High speed Si/SiGe and Ge/SiGe MODFETs Cover Page

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Microwave Noise Performance and Modeling of SiGe-Based HFETs Cover Page

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1/f noise in strained SiGe on Insulator MOSFETs Cover Page