Optical properties of hybrid quantum dot/quantum well active region based on GaAs system (original) (raw)
Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices
BAOLAI LIANG
Applied Physics Letters, 2013
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Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well
Han Htoon
2007
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Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
Vladimir Aleshkin
2002
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Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors
Veselin Todorov Donchev
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Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures
Sergei Ostapenko
Journal of Physics: Conference Series, 2007
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Photoluminescence study and parameter evaluation in InAs quantum dot-in-a-well structures
Erick Lozada
Materials Science and Engineering: B, 2011
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Light Emitting Devices Based on Quantum Well-Dots
Mikhail Maximov
Applied Sciences, 2020
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Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems
Walter Buchwald
Applied Physics Letters, 2012
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Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells
Alexander Tonkikh
Technical Physics Letters, 2002
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Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
Jan Misiewicz
Journal of Applied Physics, 2007
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The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
Luke Lester
IEEE Journal of Quantum Electronics, 2000
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Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
Nikolay Bert
Applied Physics Letters, 1999
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Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
Vadim Shalygin
Semiconductor Science and Technology, 2006
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Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
Kenneth Kennedy
IEEE Journal of Selected Topics in Quantum Electronics, 2000
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Capping layer modulation of composition of GaAs/In0.15Ga0.75As/InXGa1-XAs/GaAs quantum wells and InAs QD’s emission
T. Torchynska
AIP Conference Proceedings, 2018
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Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices
BAOLAI LIANG
Applied Physics Letters, 2013
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Magnetically controlled exciton transfer in hybrid quantum-dot–quantum-well nanostructures
Morgan Ware
Physical review, 2019
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Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
Vitaliy Dorogan, Christoph Lienau, Yu. I I Mazur, Morgan Ware
Journal of Applied Physics, 2010
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Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm
Benoit Deveaud
Applied Physics Letters, 2002
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Excitonic transfer in coupled InGaAs∕GaAs quantum well to InAs quantum dots
D. Guzun
Applied Physics Letters, 2006
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Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system
Jan Misiewicz
Physical Review B, 2012
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Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
BAOLAI LIANG
Applied Physics Letters, 2015
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Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well
georgiy tarasov
Journal of Applied Physics, 2006
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Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures
Christoph Lienau
Applied Physics Letters, 2011
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Optical properties of ultrathin InAs quantum-well-heterostructures
jacky even
Applied Physics Letters, 2012
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Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs Quantum Dots based p-i-n light emitting diodes
Shouvik Datta
Journal of Physics D: Applied Physics, 2018
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Tailoring of high-temperature photoluminescence in InAs∕ GaAs bilayer quantum dot structures
georgiy tarasov
2005
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The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
Luca Seravalli
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Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor Quantum Dot
sadra behjati
2011
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Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures
Roberto Mosca
Thin Solid Films, 2000
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Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure
Jen-Inn Chyi
Applied Physics Letters, 2019
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Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors
seyoum wolde
2014
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Quantum confined stark shift and ground state optical transition rate in [100] laterally biased InAs/GaAs quantum dots
muhammad usman
… , 2009. IWCE'09. 13th …, 2009
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