A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier (original) (raw)

3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE

IEICE Electronics Express, 2013

In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254 mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20 W (43 dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.

Design of a high efficiency GaN-HEMT RF power amplifier

2015

This paper presents the design and implementation of a GaN-HEMT, c1ass-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large signal measurement results of 30 dB gain with 60%-76% power added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J RF Power Amplifier

Progress In Electromagnetics Research C, 2017

In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6 GHz is explained. The source impedance is conjugatematched to the input impedance of the device resulted from small signal simulation to make a high-gain power amplifier. The load impedance related to the maximum power added efficiency (PAE) and maximum output power is obtained by pulling the only fundamental and second harmonic components over frequency bandwidth. Thus, not only a high-efficiency PA but also a high-linearity PA is formed. The input and output matching networks are implemented by microstrip transmission lines. The theoretical PA designed is optimized using computer-aided simulations. The fabricated PA provides output power in the range of 38-39.9 dBm with 60%-73% PAE and 15-16.3 dB power gain across the band. The worst measured ACLR1 as the PA is fed by the CDMA signal with 1.2288 MHz bandwidth is at a level of −38.6 dBc. A close agreement between the measured and simulation results is observed due to the use of high-order harmonic balance simulator and high-accuracy implementation procedure.

High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM

Bulletin of Electrical Engineering and Informatics

The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized ...

Development of a GaN HEMT class-AB power amplifier for an envelope tracking system at 2.45 GHz

2010

A class-AB power amplifier was designed for an envelope tracking (ET) application. Class-AB amplifier is widely used in wireless communication systems due to the compromise between linearity and efficiency. As a power device, Cree Gallium Nitride High Electron Mobility Transistor (GaN HEMT) CGH4010F was chosen. The input and output matching networks were designed and simulated with Advanced Design System (ADS). After some optimization, the amplifier was fabricated using a Rogers RT/Duroid 5880 substrate. The amplifier together with a MAX2247 preamplifier as a driver was measured. A good agreement between the simulation and measurement results was observed. The maximum power added efficiency (PAE) is around 50 percents with the supply voltage Vsup= 10V and the maximum drain efficiency is around 75 percents with Vsup= 5V. An output power up to 42 dBm and good linearity of the output voltage with respect to the supply voltage in the range 0≪Vsup≪20V were achieved. Thus, the amplifier i...

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Engineering and Technology Journal, 2020

The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The s...

A 1GHZ CLASS E POWER AMPLIFIER FOR WIRELESS APPLICATIONS

In this paper, a class E power Amplifier (PA) suitable for wireless applications (Wi-Max, cellular phones, cordless phones etc,) is proposed by using the device of RF3931GaN HEMT (Gallium Nitrate High Electron Mobility Transistor).The proposed class E power Amplifier for achieving high output power and increasing gain up to 14.327dB and operates in the frequency range of 1GHz. The designed Power Added Efficiency (PAE) is 64% after optimization and the maximum source power achieved is 32dBw.

Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at XXX-Band

IEEE Transactions on Microwave Theory and Techniques, 2013

In this paper, we present a wide bandwidth power amplifier (PA) utilizing a Marchand balun to achieve power combining and inverse class-F (class-F-) matching. We have used a 4-to-1 balun and its out-of-band characteristics to achieve matching at the second and third harmonic for differential class-Foperation. Thus, the balun simultaneously acts as a combiner and harmonic matching network. The experimental results demonstrate that the prototype PA achieves an output power of 41.5 dBm at the 1-dB compression point , power-added efficiency of 55%, and gain of 10 dB over a fractional bandwidth of 40% from 8 to 12 GHz. Due to the differential operation, the class-F-PA has also achieved a measured second harmonic distortion of 50 dBc. Index Terms-Gallium nitride (GaN), inverse class F, harmonic matching, power combining, power amplifiers (PAs).

GaN HEMT power amplifier design for 2.45 GHz wireless applications

SAIEE Africa Research Journal

Electronic devices with high performances like Power Amplifiers (PA) are very important for Wireless communications. This paper proposes a design of a class AB power amplifier operating at 2.45 GHz, in the S-band frequency. The Cree's CG2H40045F GaN HEMT (High Electron Mobility Transistor) is used for this design. The Gallium Nitride (GaN) technology has been chosen in light of its advantageous properties such as high breakdown voltage, high band gap, as well as high thermal conditions. The paper investigates the different design trade-offs for finding a good balance between various key parameters of the PA (linearity, efficiency, and gain). A design approach has been proposed and the microstrip lines based on the Smith Chart tool available in ADS software have been used for the matching process. The class AB was selected to reach a good agreement between linearity and efficiency, provided by this class. After various process applications from DC characterization to simulations, the proposed design achieves a power added efficiency more than 50% at power saturation with a gain of 15 dB in schematic simulation. The layout dimensions are 55.5 x 64.45 mm 2 on PCB technology.

Design of a High Efficient S-Band RF Power Amplifier with Hemt Process

In this paper we present design of a high efficient (Radio Frequency) RF Power Amplifier (PA) with gallium-nitride (GaN) high electron mobility transistor (HEMT) die for the operating frequency in S-Band. The device shows output power about 42.3 dBm with a high linear gain of 27 and Power Added Efficiency (PAE) of 65% in frequency range of 2.29 GHz. The proposed RF PA works with 28 V drain bias voltage and has been implemented with Rogers PCB. The simulation results show the implemented RF power amplifier has high power capability covering practical frequency range for S-band high power millimeter wave applications.