Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at XXX-Band (original) (raw)
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High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM
Bulletin of Electrical Engineering and Informatics
The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized ...
A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
International Journal of Microwave and Wireless Technologies, 2010
paul saad, christian fager, hossein mashad nemati, haiying cao, herbert zirath and kristoffer andersson This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that 242 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, 247 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).
Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J RF Power Amplifier
Progress In Electromagnetics Research C, 2017
In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6 GHz is explained. The source impedance is conjugatematched to the input impedance of the device resulted from small signal simulation to make a high-gain power amplifier. The load impedance related to the maximum power added efficiency (PAE) and maximum output power is obtained by pulling the only fundamental and second harmonic components over frequency bandwidth. Thus, not only a high-efficiency PA but also a high-linearity PA is formed. The input and output matching networks are implemented by microstrip transmission lines. The theoretical PA designed is optimized using computer-aided simulations. The fabricated PA provides output power in the range of 38-39.9 dBm with 60%-73% PAE and 15-16.3 dB power gain across the band. The worst measured ACLR1 as the PA is fed by the CDMA signal with 1.2288 MHz bandwidth is at a level of −38.6 dBc. A close agreement between the measured and simulation results is observed due to the use of high-order harmonic balance simulator and high-accuracy implementation procedure.
Tunable Class-F high power amplifier at X-Band using GaN HEMT
TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES, 2018
Class-F type amplification stands on proper termination of harmonics such as short for even harmonics and open for odd harmonics. Moreover, termination of only the first few harmonics is practical for high-frequency circuits, while obtaining satisfactory short and open terminations at high frequencies is a challenging design issue. In the present study, a topology of harmonics termination for Class-F load network with 2nd and 3rd harmonics and its relative analytical analysis are presented. The proposed output termination structure for Class-F type amplification provides an improved short termination of 2nd harmonic; therefore, the efficiency of the power amplifier increases. In addition, the topology implemented with the microstrip lines has a tunable structure, and it is suitable for very high-frequency applications due to its straightforward architecture. An X-Band high power amplifier for a small satellite transmitter is designed and fabricated with the proposed method. A 0.25 µm GaN on SiC HEMT having a total gate width of 1.25 mm is used. The PA achieves the peak P AE of 55% at 8.1 GHz while the output power is 36 dBm at the 3 − dB compression point. The Class-F PA has higher than 50% P AE and 35.5 dBm output power in the band of 7.9 − 8.2 GHz. The measured linear power gain is 16.2 dB .
Design of Broadband Highly Efficient Power Amplifier
A novel methodology for designing high-frequency broadband harmonic-tuned power amplifiers (PAs) is presented in this paper. Specifically, a hybrid PA mode, transferring between continuous inverse Class-F and continuous Class-F, is for the first time employed to design PAs with optimal performance over more than-an-octave bandwidth. A GaN PA is designed and realized based on this mode-transferring operation using a three-stage transmission-line-based low-pass matching network. Simulation and experimental results show that an in-band PA-mode transferring between continuous Class-F and continuous Class-F is successfully performed. The implemented PA achieves a measured 87% bandwidth from 1.3 to 3.3 GHz, while exhibiting a state-of-the-art performance of 10-dB gain, 60%-84% efficiency, and 10-W output power throughout this band. Furthermore, modulated evaluation is carried out using a 300-kHz bandwidth 16-quadrature amplitude-modulation signal. Good linearity performance is measured with adjacent channel power ratio from 20 to 35 dBc and an error vector magnitude of 4%-9% over the entire bandwidth.
IEEE Access
Many countries have allocated new frequency bands for fifth generation (5G) communication systems. In this paper, a wideband continuous class-F (CCF) radio frequency power amplifier (RFPA) is presented for the new 5G frequency band, from 3.3 GHz to 4.3 GHz using a 10 W Cree CGH40100F device. A unique wideband RFPA design approach for the output matching network (OMN) is also presented by applying a harmonic tuning network (HTN) for the harmonics and a low pass matching technique (LPMT) for the fundamental frequency. The RFPA is fabricated, and promising measurement results show a drain efficiency of 55.9% to 65.3% is achieved at an output power of 40 dBm (± 0.3 dBm) over a frequency range of 3.3 GHz to 4.3 GHz. A two-tone signal with a 10 MHz spacing was also applied to investigate the linearity of the RFPA. INDEX TERMS GaN HEMT, 5G communication, wideband, high efficiency, radio frequency power amplifier (RFPA), low pass matching, current generator plane (I-Gen).
HIGH EFFICIENT BROADBAND CLASS-E POWER AMPLIFIER DESIGN USING SYNTHESIZED LOW-PASS MATCHING NETWORKS
FUDMA, 2018
High-efficiency broadband Class-E power amplifiers (PAs) using high-order low-pass filter prototype is presented. A Gallium Nitride GaN transistor was used and characterized to prescribe the optimal output impedance for the broadband Class-E operation. A sixth order low-pass filter matching network was designed and implemented for the output matching. While the output provides optimized fundamental and harmonic impedances within an octave bandwidth. The simulated results show that an optimal band of operation was realized from 1.2GHz to 2GHz with an efficiency measured from 80% to 89%. An overall power amplifier bandwidth of 0.9GHz to 2.2GHz was measured between 10W to 20W output power with gain of 10dB to 13dB and efficiency was found to be around 63% to 89% throughout the band.
A new methodology for designing and implementing high-efficiency broadband Class-E power amplifiers (PAs) using high-order low-pass filter-prototype is proposed in this paper. A GaN transistor is used in this work, which is carefully modeled and characterized to prescribe the optimal output impedance for the broadband Class-E operation. A sixth-order low-pass filter-matching network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances within an octave bandwidth ( -band). Simulation and experimental results show that an optimal Class-E PA is realized from 1.2 to 2 GHz (50%) with a measured efficiency of 80%-89%, which is the highest reported today for such a bandwidth. An overall PA bandwidth of 0.9-2.2 GHz (84%) is measured with 10-20-W output power, 10-13-dB gain, and 63%-89% efficiency throughout the band. Furthermore, the Class-E PA is characterized through measurements using constant-envelop global system for mobile communications signals, indicating a favorable adjacent channel power ratio from 40 to 50 dBc within the entire bandwidth.
… Digest (MTT), 2011 …, 2011
A novel, highly efficient and broadband RF power amplifier (PA) operating in "continuous class-F" mode has been realized for first time. The introduction and experimental verification of this new PA mode demonstrates that it is possible to maintain expected output performance, both in terms of efficiency and power, over a very wide bandwidth. Using recently established continuous class-F theory, an output matching network was designed to terminate the first three harmonic impedances. This resulted in a PA delivering an average drain efficiency of 74% and average output power of 10.5W for an octave bandwidth between 0.55GHz and 1.1GHz. A commercially available 10W GaN HEMT transistor has been used for the PA design and realization. Index Terms-Microwave measurements, microwave theory and techniques, power amplifiers, power transistors, wideband.
2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%
IEEE Microwave and Wireless Technology Letters
In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satcom E-band (71-86 GHz) with an output power of 2.6 and 4 W, designed by incorporating an ultralow-loss ON-chip integrated power combiner. The first one is a three-stage four-way combining (unit) PA, and the second one is an eight-way combining balanced PA. The unit PA produces a saturated output power (P SAT) of 34.2 dBm (2.6 W), a peak power-added-efficiency (PAE) of 22%, and an associated power gain of 16.2 dB at 74 GHz. This performance was partly made possible by the design and optimization of the low-loss integrated power combiner, which minimized the losses in the matching networks. In addition, the balanced PA produces a P SAT of 36 dBm (4 W), P 1 dB of 35.6 dBm (3.63 W), with an associated PAE of 15.3% at 80 GHz. To the best of the authors' knowledge, this is the highest output power (4 W) and the highest PAE (22%) for a PA > 2.5 W reported in any of the III-V technologies at E-band. Index Terms-E-band, gallium nitride (GaN), high efficiency, high frequency, high output power, low-loss, mm-wave, monolithic microwave integrated circuit (MMIC), ON-chip, power amplifier (PA), power combining, W-band.