Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing (original) (raw)
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
In this work the structural analysis of the buried oxide layers formed by high dose oxygen ion implantation into S : through a screen oxide layer and annealing has been performed by infrared absorption, X-ray photoelectron spectroscopy and el!tpsometry measurements . The correlation between the measurements from the different techniques points out the high structural quality of the buried oxide layers from the ant-led tiowover . structural disorder is observed in the regions close to the Si/SiO, int,faces. This is strongly dependent on the screen oxide thickness . For the ûdck Si/SiO, interface, thiti dependence can be correlated with the density of Si islands in the huricd oxide layer .
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
The formation and structure of buried SiO, layers formed by oxygen ion implantation into silicon at 150 keV have been studied by cross-sectional transmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS). The implanted oxygen dose was increased from 0.1 to 0.65 X lOI O+/cm' and the wafers were annealed for 5 hours at 1300 o C. A dose of 0.45 x 10's O+/cm* was needed to produce a continuous buried oxide layer after annealing, even though a buried layer was not present in the as-implanted material. At this dose, no overlayer threading dislocations were visible by XTEM although small twins and stacking faults were present near the upper Si/SiO, interface. The type of defect being formed was found to depend on the morphology of the growing interface.
Characterization of oxide layers grown on implanted silicon
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995
Boron ions were implanted at 80 keV for a dose of 2 i< 1015 cm-' in crysta!line silicon. The silicon crysta! was recovered using different annealing processes to produce layers with different secondary defect densities. The quality and the characteristics of the silicon oxide grown on the different surfaces were found to depend on the defects present in the layer immediately under it. The oxide quality was improved by using implanted and annealed silicon with a defect free surface& Iron ccintaminations, introduced in the wafers at different concentrations (up to 1 X 10" cm -"I, do not affect the oxide layer grown on unimplanted silicon wafers, while it degrades the oxide characteristics of layers grown on impianted and annealed samples. This degradation decreases if the residual damage is reduced by annealing processes.
Oxide modification due to high temperature processing of Si/SiO2/Si structures
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms - NUCL INSTRUM METH PHYS RES B, 1994
Si/SiO, /Si structures have beea subjected to 6 h anneals at 1320°C and defects generated by the annealing process revealed by ultra-violet and X ray irradiation and by hole injection. Two types of oxygen-vacancy related defects have been detected in the oxide by electron spin resonance, one involving Si interstitials.
Structural studies of 20 keV oxygen-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
Silicon wafers were implanted with 20 keV O 2 up to total¯uence of 1 Â 10 18 O 2 cm À2 to synthesize SiO 2 layers. The FTIR, ESR and C±V studies of as-implanted samples and samples nitrogen-annealed at 500°C and 800°C are reported. The FTIR spectrum of the as-implanted sample shows absorption bands corresponding to the stretching (1050 cm À1 , strong), the bending (800 cm À1 , weak) and the rocking (415 cm À1 , weak) modes of SiO 2 . The peaks shift towards higher wave number on annealing. The ESR signal of the as-implanted sample exhibits an isotropic g-value 2.0028, the line width 3.75 G and the spin density 1X1 Â 10 16 cm À2 which disappears on annealing at 800°C. The interface state density distribution as a U-shape and a minimum value of $7±8 Â 10 11 cm À2 eV À1 . Ó
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Ion beam synthesis of buried oxide layers by high dose oxygen ion implantation is accompanied by rapid oxygen redistribution and exchange within the fabricated oxide layer, lSo tracer techniques using SIMS analysis have been used to study the nature of the Si/SiO 2 and SiOz/Si interfaces and their evolution through the mass transport properties of the buried oxide layer.
Growth of buried silicon oxide in Si–Si bonded wafers upon annealing
Journal of Applied Physics, 2001
Properties of the buried silicon oxide layer in Si-Si bonded wafers upon annealing were studied using Infrared ͑IR͒ spectroscopy and high resolution transmission electron microscopy ͑HRTEM͒. IR spectra of chemically etched Si-Si bonded wafers allow the thickness of the buried oxide layers to be evaluated. The increasing thickness of the buried oxide layer with annealing temperature is determined via a curve fitting procedure of IR spectra measured in the spectral range of longitudinal optical and transversal optical phonons in silicon oxide. The behavior observed is in very good agreement with that obtained from HRTEM measurements.
Effect of Deposition Conditions on Oxide Parameters of Silicon
2021
In this study, the effect of deposition conditions and the temperature thermal treatment on the oxide parameters of two structures of silicon layers were investigated. The study present the evolution of in situ boron profiles following a dry thermal oxidation in poly-Si/SiO2 /c-Si films deposited at 520°C and 605°C temperatures and thermally oxidized in dry oxygen at respectively temperature 840°C, 945°C and 1050°C for duration tr=1h33’. The results show that the deposition conditions and the temperature treatment make a very important impact on the obtained films, which affect the redistribution and localization of dopants. It has been observed that the obtained value of the linear and the parabolic rate constant, the diffusion coefficient and the oxidation thickness are higher in the films deposited at Td = 520°C than those deposited at Td = 605°C. Also, the X-ray diffraction is strongly affected by the oxide thickness deposited between poly-silicon layers and crystalline substrates.
Radiation Effects and Defects in Solids, 2011
Silicon oxide (SiO2)-buried insulating layers were synthesized by separation by an implanted oxygen process using 140 keV (16O+) implantation into <111> single-crystal silicon at room temperature at low fluence levels ranging from 1.0 × 1016 to 7.0 × 1016 cm−2. The buried silicon oxide layers have been characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques before and after annealing at 1200 C for 30 min in argon ambient. The FTIR spectra after annealing of the samples revealed an absorption band associated with one bending vibration in addition to the asymmetric stretching vibration of Si−O bonds. The XRD spectra of as implanted samples showed a decrease in the peak (111) intensity with an increase in the ion fluence. The peak intensity was found to increase for all the implanted samples on annealing. The XRD studies revealed the formation of silicon oxide (SiO2) at all ion fluences. The AFM image of the crystalline silicon showed a very smooth micrograph. However, the AFM micrograph of the annealed samples showed nano-hillock-like structures on the silicon surface. .
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012
Epitaxial anatase titanium dioxide (TiO 2) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer without any amorphous SiO x layer at the STO-Si interface. Four unit cells of STO grown by molecular beam epitaxy (MBE) serve as the surface template for ALD growth. To preserve the quality of the MBE-grown STO, the samples were transferred in situ from the MBE chamber to the ALD chamber. The growth of TiO 2 was achieved using titanium isopropoxide and water as the coreactants at a substrate temperature of 250 C. In situ x-ray photoelectron spectroscopy analysis revealed that the ALD process did not induce Si-O bonding at the STO-Si interface. Slight improvement in crystallinity of the TiO 2 film was achieved through in situ annealing under vacuum (10 À9 Torr) at 450-600 C. However, the amount of Si-O bonding increased following annealing at temperatures greater than 250 C. X-ray diffraction revealed that TiO 2 films annealed at a temperature of 250 C in vacuum (10 À9 Torr) for 1 h were the anatase phase and well crystallized. The results indicate that careful consideration of growth temperature and annealing conditions may allow epitaxial oxide films to be grown by ALD on STO-buffered Si(001) substrates without formation of an amorphous SiO x layer.