InGaP Window Layer for Gallium Arsenide (GaAs) based Solar Cell Using PC1D Simulation (original) (raw)
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In this paper a numerical optimization and simulation are carried out using a Tcad Silvaco to extract the I-V characteristics of the single solar cells InGaP and GaAs and to predict the effect of the window layer on the performance of the solar cells. First, the InGaP and GaAs solar cells are simulated without a window layer, we have obtained an efficiency (ɳ=15.95) and (ɳ=11.24) respectively. In a second step, both InGaP and GaAs cells are simulated by introducing the window layer (In (0.39) Al (0.61) As (0.16) P (0.84) for InGaP cell) and (In (0.5) Ga (0.5) P for GaAs cell. We noticed an improvement in the characteristics I-V of each cell: fill factor (FF = 91.21%) and (ɳ =21.43%) for InGaP cell and (FF = 88.03%) and (ɳ =25.27%) for GaAs cell. The results were obtained under AM1.5 illumination and 300°K
World Academy of Science, Engineering and Technology, International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering, 2017
Abstract—This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.
Optimal parameters for performant heterojunction InGaP/GaAs solar cell
International Journal of Hydrogen Energy, 2017
We demonstrated mainly some of the different parameters effects-as a function of temperature-as window layers, thickness, and doping of the various layers (emitter, base and BSF) on the performances of InGaP/GaAs solar cell. First, we have varied the molar fraction of different layers; their thickness and the doping of both emitters and bases. We have registered the result of each variation until obtaining optimal parameters. In a second stage, we have simulated the InGaP/GaAs cell without window layers which results in h ¼ 12.47% and h ¼ 22.14% for eliminating top and bottom windows respectively. Then, the elimination of layer BSFs(back surface field) on the back face of the considered cell causes a remarkable decrease in open circuit voltage Voc and output h which reached 1.57 V and 11.95% respectively. In a last stage, we optimized and simulated the performances of the InGaP/ GaAs dual-junction solar cell for its optimal parameters while varying its operation temperature from 300 K to 375 K with an increment of 25 C using a virtual wafer fabrication TCAD Silvaco. The optimization at 300 K led to the following results Icc ¼ 15.19 mA/cm À2 , Voc ¼ 2.53 V, FF ¼ 91.32% and h ¼ 25.43% which are close with those found in literature for In (1Àx) Ga (x) P(x is molar fraction: x ¼ 0.5). Therefore, we could determine the critical parameters of the cell and optimize its main parameters to obtain the highest performance for a dual junction solar cell. This work will pave the way with new prospects in the field of the photovoltaic. The structure simulation will simplify the manufacturing processes of solar cells; will thus reduce the costs while producing high outputs of photovoltaic conversion.
Efficiency improvement of single-junction InGaP solar cells by advanced photovoltaic device modeling
Optik, 2018
A model to optimize single-junction InGaP based solar cells for soundly high photovoltaic characteristics is proposed. The simulated photovoltaic (PV) characteristics include current density (J-V) plots, open circuit potential (VOC), short circuit photocurrent density (JSC), fill factor (FF), conversion efficiency (η) spectral response and photo generation rates, taking into account different structural parameters. The results are superior to earlier experimental multijunction InGaP based solar cells, in terms of η and FF values. They are also soundly comparable to earlier simulated PV characteristics. Starting with a single-junction InGaP solar cell, the results are potentially useful in future enhancements of multi-junction (III-V semiconducting materials, with different band gap values, such as InGaP/GaAs/Ge) solar cell models, which involve InGaP as front stack. The design concept of InGaP single-junction solar cells is described here, together with key technologies to achieve high efficiency of 18.55% at AM1.5 Sun, using the numerical modeling TCAD tool Silvaco ATLAS.
Numerical Study of InGaN based Photovoltaic by SCAPs Simulation
Energy Procedia, 2015
The necessity to find new forms of renewable energy is very important and urgent nowadays. The renewable sources of energy derived from the sun are one of the promising options. The photovoltaic cells as one of renewable energy sources have been largely studied in order to obtain cheap, efficient and secure PV cells. The conversion efficiency is the most important property in the PV domain. Indium gallium nitride (InGaN) alloys offer great potential for high-efficiency photovoltaics. We present numerical simulations of GaN/InGaN heterojunction solar cells by SCAPs simulation. The calculation of characteristic parameters: short-circuit current density, open-circuit voltage, and conversion efficiency. So, these simulations study the effect of indium content and thickness in these parameters. While the maximum efficiency of a p-n GaN/InGaN heterojunction solar cell with 0.2 indium composition is 2.78%, above an indium composition of 20%, the modeled heterojunction devices do not operate as solar cells.
Journal of Electrical Systems, 2018
The high efficiency solar cells are based on semi conductor technology. A tandem solar cell is simulated using the solar simulator Tcad silvaco. In this work, we aim to model the dual junction InGaP/GaAs solar cell with a single back surface field (BSF) to extract the main influence of this layer as well as the tunnel junction on the characteristics I-V. The considered InGaP/GaAs cell is composed of two BSFs InAlAsP BSF for the InGaP cell and AlGaAs BSF for the GaAs cell. The top cell (InGaP) and the bottom cell (GaAs are separated by an InGaP/InGaP tunnel junction (TJ) with the same doping concentration for both the emitter and the base. In a first stage, the InGaP\GaAs cell is simulated without both BSFs, then without the tunnel junction. We noticed an efficiency Ƞ of 17.80% and 10.98% respectively. Finally; the InGaP/GaAs cell is simulated with both BSFs and the tunnel junction. We have obtained an I-V characteristics with an optimum conversion efficiency Ƞ=34.44%, an opencircuit...
On the optimization of InGaP/GaAs/InGaAs triple-junction solar cell
IOP Conference Series: Materials Science and Engineering
This paper presents an optimization procedure for the design parameters of InGaP/GaAs/InGaAs Triple-Junction (TJ) solar cell by using SILVACO TCAD. The solar cell design parameters include layers' materials, thicknesses and doping concentrations. Firstly, the optimization technique is performed on an InGaP/GaAs/Ge cell. The Ge sub-cell is then replaced by an InGaAs sub-cell. A comparison between the performance parameters of InGaP/GaAs/InGaAs and InGaP/GaAs/Ge TJ solar cells is investigated. The compared parameters are the open circuit voltage (V OC), short circuit current density (J SC), Fill Factor (FF) and the conversion efficiency (η). Finally, a comparison between these optimized devices against some previously published work is presented. All simulations for triple-junction solar cells are accomplished under light intensity of 1-sun of standard AM1.5G solar spectrum at 300 K. The electrical characteristics for the proposed TJ solar cell are V OC = 2.9 V and J SC = 15.97 mA/cm 2 with conversion efficiency = 42.01%.
The photovoltaic power (PV) is obtained by direct conversion of sunlight into electricity by means of PV cell. Performance optimization of InGaP/GaAs heterojunction solar cell can be done by acting on some components and parameters of this cell. The main objective of this work is to optimize the efficiency by varied the concentration doping of emitter layer of this type of solar cell, which is limited by multiple losses in particular those related to photons and carriers. The performances of the chosen model, of this InGaP/GaAs heterojunction, are obtained by using Silvaco-Tcad. The optimisation result shows that the maximum efficiency of 21.68% % has been achieved, with short circuit current density of 32.29mA/cm 2 , open circuit voltage of 0.82V and fill factor of 0.81%.
Study of the Role of Window Layer Al0.8Ga0.2As on GaAs-based Solar Cells Performance
Indian Journal of Science and Technology, 2019
Numerical simulation of various structures of a solar cell plays a crucial role in the design, performance prediction and the comprehension of the physics involved in their operation. It also allows of better understanding the different ways to improve the solar cells efficiency before the manufacture of the practical cell. Objectives: In this study, numerical results were obtained using SCAPS-1D program in order to improve GaAs solar cells performance. Methods: The analysis deals with the role of Al x Ga 1-x As-type window layer on overall electrical performance of solar cells. The variations of thickness and doping levels in this window layer were also investigated. Findings: By growing this layer at the GaAs surface, the efficiency increased from 17.23% to 27.37%. The simulation results showed that this window layer should be very thin and slightly doped to achieve good performances of the entire solar cells. Improvements/Applications: These results are interesting because they show how much the window layer is important in improving the efficiency of GaAs solar cells.