Single stage travelling wave power amplifier (original) (raw)
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Decade bandwidth single and cascaded travelling wave medium power amplifiers using sige hbts
2011
This paper presents two integrated class-A travelling wave medium power amplifiers employing 0.35μm SiGe HBT process. The first amplifier realized is a 1.3×1mm2 device comprising of a single-stage configuration using a single transistor that exhibits an average small-signal gain of 7dB and power level of 14dBm between 0.25 to 2.5GHz while maintaining power-added efficiency in the range 30% to 10%. The second amplifier is 1.8×2.3mm2 device comprising of a driver stage cascaded with two identical amplifier stages in a parallel configuration whose outputs are combined together to enhance the devices output power by 3dB across the wideband frequency range. This amplifier's unique topology is implemented using a version of the first amplifier. The amplifier's measured output power was approximately 18dBm, the average small-signal gain was 21dB, and efficiency between 30% to 10% across 0.2-2.2GHz.
Highly Efficient and Linear Class E SiGe Power Amplifier Design
2006
This paper discusses the design of monolithic RF broadband Class E SiGe power amplifiers (PAs) that are highly efficient and linear. Load-pull measurement data on IBM 7HP SiGe power devices have been made at 900MHz and 2.4GHz and monolithic class E PAs have been designed using these devices to achieve highest power-added-efficiency (PAE) at these frequencies. It is found that high PAE can be achieved for monolithic single-stage Class E PAs designed using high-breakdown SiGe transistors at ~65% (900MHz) and ~40% (2.4GHz), respectively, which are roughly ~10% lower than the device's maximum PAE values obtained by load-pull tests under optimal off-chip matching conditions. We have also demonstrated that monolithic SiGe class E PAs can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving overall PAE of 44.4% for the linearized PA system that surpasses the <30% PAE with commercially available GaAs Class AB PAs for EDGE applications. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes.
IEEE Journal of Solid-State Circuits, 2014
Design equations and performance limits of Class-E power amplifiers at mm-waves, including the limitations imposed by active and passive devices in a given technology, are presented in this paper. A beyond nominal breakdown voltage Class-E design methodology for SiGe HBT power amplifiers is proposed to generate high output power while maintaining high Class-E efficiency. A mm-wave SiGe stacked Class-E architecture is also introduced to increase the overall voltage swing, with each series stacked device operating in the beyond nominal breakdown mode. The mm-wave beyond operation of SiGe HBTs has been demonstrated experimentally in an integrated 45 GHz Class-E power amplifier fabricated in a 0.13 µm SiGe BiCMOS process with 20 dBm measured output power at 31.5% peak power-added efficiency (PAE). The series stacking of mm-wave Class-E power amplifier concept is also verified by fabricating double-stacked and triple-stacked SiGe HBT power amplifiers in 0.13 µm SiGe BiCMOS process which demonstrate a measured output power of 23.4 dBm at 41 GHz with peak PAE of 34.9%. High power, highly efficient, switching power amplifier unit cells presented in this paper can facilitate realization of efficient Watt-level mm-wave digital polar transmitters.
A 1GHZ CLASS E POWER AMPLIFIER FOR WIRELESS APPLICATIONS
In this paper, a class E power Amplifier (PA) suitable for wireless applications (Wi-Max, cellular phones, cordless phones etc,) is proposed by using the device of RF3931GaN HEMT (Gallium Nitrate High Electron Mobility Transistor).The proposed class E power Amplifier for achieving high output power and increasing gain up to 14.327dB and operates in the frequency range of 1GHz. The designed Power Added Efficiency (PAE) is 64% after optimization and the maximum source power achieved is 32dBw.
A High Efficiency 1.8W Power Amplifier for Wireless Communications
Elektronika ir Elektrotechnika, 2014
A power amplifier, implemented in 2µm InGaP/GaAs Heterojunction Bipolar Transistor (HBT) is presented. The size of the fabricated chip is 700 µm × 700 µm. With an integrated input matching network, the PA observes an input return loss (S11) of-22 dB. Biased at low quiescent current of 65 mA, it delivers a maximum output power of 1.8 W with 71 % efficiency at 1.85 GHz. The output return loss (S22) of the PA is-15.2 dB. The output matching network is designed to reduce the mismatch loss between the power amplifier and the antenna without compromising the output power and efficiency. The PA also exhibits a K-factor greater than 1 from DC up to 5 GHz, ensuring unconditional stability. The power gain of the PA is 14.9 dB. The measured results verify that the PA is capable to operate at high efficiency and to deliver high output power with a good output return loss.
A high-power two stage traveling-wave tube amplifier
Journal of Applied Physics, 1991
Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a "sideband"-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the "sidebands" are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length.
A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012
A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 µm SiGe HBT BiCMOS process. A mm-wave Class-E architecture considering the effect of various interconnect parasitics is adopted to achieve high power efficiency. Proper input and output networks have been designed to enable efficient switching of the HBT at large voltage swings without causing unwanted impact ionization-induced negative base current and instability. The measured performance of the fabricated chip show 20.2 dBm maximum output power, 31.5% peak power added efficiency, and 10.5 dB power gain across 4 GHz centered around 45 GHz for a supply voltage of 2.5 V. The total chip area including the pads is 0.74 mm × 1.7 mm.
TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES, 2014
A linearization technique for improving the class-E power amplifier (PA)'s adjacent channel power ratio (ACPR) is proposed. The design is simulated in a 2-µ m InGaP/GaAs heterojunction bipolar transistor process. The integration of a passive predistorter at the input of the PA linearizes the proposed architecture. At a 29-dBm output power, the PA's ACPR is indicated to be-51 dBc, meeting the stringent code division multiple access regulation. At this exact output power, the simulated power added efficiency is 55% with the collector voltage headroom consumption of 3.4 V. The input return loss, S11, of the PA is simulated as-12.5 dB. With an active finger print dimension of 1000 µ m × 750 µ m, the proposed PA is well suited for the application of mobile wireless communication.
A 24 GHz Class-A power amplifier in 0.13um CMOS technology
2011 3rd International Conference on Computer Research and Development, 2011
A 24 GHz Class-A amplifier is designed in 0.13um CMOS technology. The matching network for the cascode amplifier is implemented by microstrip lines that have been implemented in small space by meandering. The amplifier delivers 12.5 dBm power to a 50 � load from a 2 V supply. A maximum Power Added Efficiency (PAE) of 30% is achieved at 1-dB compression point (P1dB). Keywords-microwave amplifier, linearity, automotive radar, microstrip lines