Optical and electrical characterization of n-GaAs surfaces passivated by N< sub> 2–H< sub> 2 plasma (original) (raw)

Optical and electrical characterization of n-GaAs surfaces passivated by N2–H2 plasma

L. Schiavulli, Teresa Ligonzo, Vito Capozzi

Journal of Luminescence, 2003

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N[sub 2]–H[sub 2] remote plasma nitridation for GaAs surface passivation

Giovanni Bruno

Applied Physics Letters, 2002

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Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

Philip Hoggan

Applied Surface Science, 2022

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Passivation of GaAs surface by ultrathin epitaxial GaN layer

Harri Lipsanen

Journal of Crystal Growth, 2004

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A study of remote plasma nitrided nGaAs/Au Schottky barrier

P. Capezzuto, L. Schiavulli

Solid-State Electronics, 2005

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Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

Sanguan Anantathanasarn

Applied Surface Science, 2002

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GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Markus Bosund

Applied Surface Science, 2010

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Mechanisms of GaAs surface passivation by a one-step dry process using low-frequency plasma enhanced chemical deposition of silicon nitride

Abdelatif Jaouad

Microelectronic Engineering, 2020

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Erratum to “GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride” [Appl. Surf. Sci. 256 (2010) 7434–7437]

M. Sopanen, Harri Lipsanen

Applied Surface Science, 2011

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Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes

Teresa Ligonzo

Applied Surface Science, 2006

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Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors

shailesh khamari

Journal of Applied Physics, 2018

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Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

Philip Hoggan

Applied Surface Science, 2019

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Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Naohiro Shimizu

AIP Advances, 2018

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XPS investigation of ion beam induced conversion of GaAs (0 0 1) surface into GaN overlayer

Mahesh Kumar

Applied Surface Science, 2009

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Real-time, in situ monitoring of surface reactions during plasma passivation of GaAs

Eray Aydil

Applied Physics Letters, 1993

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Nitrogen Ion Induced 2D-GaN Layer Formation of GaAs (001) Surface

Govind Gupta

Journal of Nanoscience and Nanotechnology, 2009

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Chemical effect of inert argon beam on nitride nanolayer formed by ion implantation into GaAs surface

V. Mikoushkin

Technical Physics Letters, 2010

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Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2plasma prior to SiN passivation

Chang Fu Dee

Japanese Journal of Applied Physics, 2015

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Effects of the Low Energy Ion Beam Nitridation on GaAs Surface Structure and Electrical Characteristics of Au-nGaAs and Co-nGaAs Schottky Contacts

Vitoldas Kopustinskas

Energy (eV)

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Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Kenji Ishikawa

Aip Advances, 2012

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Real time in situ monitoring of surfaces during glow discharge processing: NH3 and H2 plasma passivation of GaAs

Eray Aydil

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995

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A comparative study of surface passivation on AlGaN/GaN HEMTs

vikram kumar

Solid-state Electronics, 2002

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