A comparative study of surface passivation on AlGaN/GaN HEMTs (original) (raw)

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Peter Javorka

Solid-State Electronics, 2003

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Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

B. Grimbert, H. Mosbahi

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The Effect of Surface Passivation on the Microwave Characteristics of Undoped AlGaN/GaN HEMT's

Кирилл Бедратый

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Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

Neel Chatterjee

IOP Conference Series: Materials Science and Engineering

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High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Malek Gassoumi

Silicon

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Influence of layer structure on performance of AlGaN/GaN high electron mobility transistors before and after passivation

Peter Javorka

Journal of Electronic Materials, 2004

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The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs

PIL SUNG PARK

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Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

M. Marso

physica status solidi (c), 2005

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AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process

Ahmed Chakroun

IEEE Electron Device Letters, 2017

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Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates

Peter Javorka

MRS Proceedings, 2002

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Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs

Fikria Jabli

Journal of Alloys and Compounds, 2015

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An investigation of different stress-free passivation layer designs in GaN HEMTs

DIKSHA JOSHI

2013

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AlN/GaN MOS-HEMTs With Thermally Grown hboxAl2hboxO3\hbox{Al}_{2} \hbox{O}_{3}hboxAl2hboxO3 Passivation

E. Wasige

IEEE Transactions on Electron Devices, 2011

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Impact of Silicon Nitride Passivation Thickness on AlGaN backslash\ backslash backslash GaN Transport Properties and Device Performance

Helen Jackson

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Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors

Joseph Smart

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)

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Effects of Surface Passivation and Deposition Methods on the 1/ fff Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Cedric Lacam

IEEE Electron Device Letters, 2015

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Performance of Strained AlInN/AlN/GaN HEMTs with Si3N4 and Ultra-Thin Al2O3 Passivation

Mildred Trejo

2011

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Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

James Mabon

Journal of Electronic Materials, 2007

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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Omair Saadat

IEEE Electron Device Letters, 2009

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Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT

Anwar Jarndal

IEEE Journal of the Electron Devices Society

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Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

Ozlem Sen

Semiconductor Science and Technology, 2018

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The role of cleaning conditions and epitaxial layer structure on reliability of Sc< sub> 2 O< sub> 3 and MgO passivation on AlGaN/GaN HEMTS

Joshua Sewell

Solid-State …, 2002

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The low-k BCB passivation layer on the GaN HEMTs

Jen-Inn Chyi

2004

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RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs

M. Marso

2006 International Conference on Advanced Semiconductor Devices and Microsystems, 2006

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RF and DC characteristics in Al 2 O 3 /Si 3 N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Takatomo Enoki

physica status solidi (a), 2006

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AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

kuiwei Geng

Electronics, 2018

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Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Abdelkader Souifi, Hassan Maher

IEEE Electron Device Letters, 2000

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