A 2.469-2.69GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications (original) (raw)
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GaN HEMT power amplifier design for 2.45 GHz wireless applications
SAIEE Africa Research Journal
Electronic devices with high performances like Power Amplifiers (PA) are very important for Wireless communications. This paper proposes a design of a class AB power amplifier operating at 2.45 GHz, in the S-band frequency. The Cree's CG2H40045F GaN HEMT (High Electron Mobility Transistor) is used for this design. The Gallium Nitride (GaN) technology has been chosen in light of its advantageous properties such as high breakdown voltage, high band gap, as well as high thermal conditions. The paper investigates the different design trade-offs for finding a good balance between various key parameters of the PA (linearity, efficiency, and gain). A design approach has been proposed and the microstrip lines based on the Smith Chart tool available in ADS software have been used for the matching process. The class AB was selected to reach a good agreement between linearity and efficiency, provided by this class. After various process applications from DC characterization to simulations, the proposed design achieves a power added efficiency more than 50% at power saturation with a gain of 15 dB in schematic simulation. The layout dimensions are 55.5 x 64.45 mm 2 on PCB technology.
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2015
This paper presents the design and implementation of a GaN-HEMT, c1ass-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large signal measurement results of 30 dB gain with 60%-76% power added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.
A 1GHZ CLASS E POWER AMPLIFIER FOR WIRELESS APPLICATIONS
In this paper, a class E power Amplifier (PA) suitable for wireless applications (Wi-Max, cellular phones, cordless phones etc,) is proposed by using the device of RF3931GaN HEMT (Gallium Nitrate High Electron Mobility Transistor).The proposed class E power Amplifier for achieving high output power and increasing gain up to 14.327dB and operates in the frequency range of 1GHz. The designed Power Added Efficiency (PAE) is 64% after optimization and the maximum source power achieved is 32dBw.
High Power, Single Stage SiGaN HEMT Class EPower Amplifier at GHz Frequencies
A high power single stage class E power amplifier is implemented with lumped elements at 0.89-1.02 GHz using Silicon GaN High Electron Mobility Transistor as an active device. The maximum drain efficiency (DE) and power added efficiency (PAE) of 67 and 65 % respectively is obtained with a maximum output power of 42.2 dBm (~ 17 W) and a maximum power gain of 15 dB. We obtained good results at all measured frequencies.
Modeling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology
2005 European Microwave Conference, 2005
This paper reports on the design of a cascode GaN HEMT distributed power amplifier demonstrating significant improvement of the best power performances reported to date. The active device is a 8x50µm AlGaN/GaN HEMT grown on siSiC. The distributed power amplifier integrates 4 cascode cells capacitively coupled to the gate line for power optimization. The active part made of the 4 cascode cells is implanted on a GaN-based wafer while the distributed passive part made of the interconnection lines is implanted on an AlN substrate. Finally, the GaN-based wafer integrating the active part is flip-chipped onto the AlN substrate via electrical and mechanical bumps. The flip-chip integrated circuit demonstrates a mean gain of 10dB and input/output matching lower than -10dB over the 4-18GHz bandwidth. At an input power of 29dBm (1db comp.), power simulations exhibit a mean output power of 37.6dBm with a standard deviation of 0.3dB, a power gain of 8.6dB and 16% of PAE over the band. At an input power of 31dBm (2dB comp.), the distributed amplifier achieves a mean output power of 38.6dBm, a power gain of 7.6dB and 18% of PAE.
3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE
IEICE Electronics Express, 2013
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254 mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20 W (43 dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.
Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J RF Power Amplifier
Progress In Electromagnetics Research C, 2017
In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6 GHz is explained. The source impedance is conjugatematched to the input impedance of the device resulted from small signal simulation to make a high-gain power amplifier. The load impedance related to the maximum power added efficiency (PAE) and maximum output power is obtained by pulling the only fundamental and second harmonic components over frequency bandwidth. Thus, not only a high-efficiency PA but also a high-linearity PA is formed. The input and output matching networks are implemented by microstrip transmission lines. The theoretical PA designed is optimized using computer-aided simulations. The fabricated PA provides output power in the range of 38-39.9 dBm with 60%-73% PAE and 15-16.3 dB power gain across the band. The worst measured ACLR1 as the PA is fed by the CDMA signal with 1.2288 MHz bandwidth is at a level of −38.6 dBc. A close agreement between the measured and simulation results is observed due to the use of high-order harmonic balance simulator and high-accuracy implementation procedure.
International Journal of Microwave and Wireless Technologies, 2010
This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear progress on GaN technology, device packaging, and PA design. Targeting at highly efficient single-band amplifier applications, a 2.7 GHz symmetrical Doherty amplifier with up to 45% drain efficiency at close to 45 dBm average output power under single-carrier W-CDMA (Wideband Code Division Multiple Access) operation using digital predistortion can be highlighted. In case of multiband capable ampl...
A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications
Medicon Engineering Themes
GaN HEMT is chosen for many high frequency applications such as Power Amplifiers because of its desirable properties. Most semiconductors fail at high frequency applications because of their thermal and bias limitations. It's very difficult to operate the amplifier at high frequency and high power ratings. The HEMT transistors can operate at high electric fields and high frequencies. The heterojunction structure provides more no of free electrons without any doping which significantly improves the mobility and the current. The heterostructure also blocks the current flow in unwanted directions. This paper explains about GaN HEMT transistor and its practical application as a Power Amplifier. CREE CGH40010F GaN (10 W) device is chosen and developed at the schematic level. The schematic provides 15.5 dB gain and 66% efficiency.
2024
This study presents a highly efficient Doherty Power Amplifier (DPA). The design uses 10W GaN High-Electron-Mobility Transistors (CG2H40010F) for their characteristics, such as high breakdown voltage and power density. Advanced Design Software (ADS) was used to conduct the design. The design configuration employed a pair of individual Power Amplifiers (PAs) and connected them via a Wilkinson Power divider (WPD), which also facilitates the transmission of power towards the charge. The Doherty Power Amplifier (DPA) has been designed to offer high efficiency, output power, and wide bandwidth, in addition to expanding power back-off levels. It operates within the 2.0-2.8 GHz frequency range. The DPA topology replaces the previous quarter-wave transformer with a Wilkinson Power Combiner (WPD). Simulation results show a fractional bandwidth of 33.33%, a saturated output power of 44 dBm, and a higher gain of approximately 15 dB. Furthermore, Drain efficiency (Deff) and Power-Added Efficiency (PAE) stand at approximately 85% and 95%, respectively. After linearization, the design produced an output power of 39.171 dBm using a 100 MHz, 6.5 dB PAPR 5G NR DL signal at 2.4 GHz. Additionally, it achieved an ACLR of-56.88 dB for the adjacent channel. The outcomes of this study indicate that the proposed DPA achieves excellent drain efficiency, providing a solution for increasing DPA bandwidth while maintaining linearity. The intrinsic features of GaN devices, which allow for higher frequency operation and wider bandwidth, make this design ideal for 5G applications.