High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
Ian Sellers
IEEE Photonics Technology Letters, 2000
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1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
Kristian Groom
Electronics Letters, 2006
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p-doped 1.3 μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency
Chao-Yuan Jin
H. Y. Liu, S. L. Liew, T. Badcock, D. J. Mowbray, M. S. Skolnick, S. K. Ray, T. L. Choi, K. M. Groom, B. Stevens, F. Hasbullah, C. Y. Jin, M. Hopkinson, and R. A. Hogg , 2006
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The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers
Ian Sellers
IEEE Photonics Technology Letters, 2000
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High-performance InAs/GaAs quantum dot laser with dot layers grown at 425 oC
yang wang
Chinese Optics Letters, 2013
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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
Zh N
Journal of Crystal Growth, 2003
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InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
Huiyun Liu
IEEE Journal of Selected Topics in Quantum Electronics, 2013
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Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
Luke Lester
IEEE Photonics Technology Letters, 2000
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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
Huiyun Liu
IEEE Journal of Selected Topics in Quantum Electronics, 2016
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Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
Kenneth Kennedy
IEEE Journal of Selected Topics in Quantum Electronics, 2000
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Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot laser grown on InP substrates
A. Corre, N. Bertru, Ibrahim M Alghoraibi
2008
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1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
Alwyn Seeds
Optics express, 2011
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Temperature-dependent modulation characteristics for 1.3 μm InAs/GaAs quantum dot lasers
Tao Yang
Journal of Applied Physics, 2010
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Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
Damien Bordel
Optics Express, 2010
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Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
Gabriel Walter
Applied Physics Letters, 2001
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Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates
Huiyun Liu
IET Optoelectronics, 2014
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1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
Prof. HC Kuo
2006
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Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3- m InAs–GaAs QD Lasers With Different Doping Levels
Han Zhao
IEEE Photonics Technology Letters, 2010
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In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates
Stella Elliott
Optics Express, 2016
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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures
Nurul Fadzlin Hasbullah
2009
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Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Luke Lester
IEEE Photonics Technology Letters, 2000
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The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
Luke Lester
IEEE Journal of Quantum Electronics, 2000
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Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
Alwyn Seeds, Mingchu Tang
Optics Express, 2012
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Reduced temperature sensitivity of lasing wavelength in near-1.3 [micro sign]m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer
Kristian Groom
Electronics Letters, 2007
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Effects of spacer growth temperature on the optical properties of quantum dot laser structures
Nurul Fadzlin Hasbullah
2007
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Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon
Huiyun Liu
Journal of Lightwave Technology, 2019
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Proposal of High Performance 1.55µm Quantum Dot Heterostructure Laser Using InN
Tanvir Hasan
IEICE Transactions on Electronics, 2012
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1.3-1.5 μm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance
A. Kozhukhov
Novel In-Plane Semiconductor Lasers V, 2006
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Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-mum p-Type Modulation-Doped Quantum-Dot Laser
Chao-Yuan Jin
Chao-Yuan Jin, Tom J. Badcock, Hui-Yun Liu, Kristian M. Groom, Richard J. Royce, David J. Mowbray, and Mark Hopkinson, 2006
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Temperature Characteristics of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
Wei Fan
IEEE Journal of Selected Topics in Quantum Electronics, 2000
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1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine
Dieter Bimberg
Applied Physics Letters, 2004
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Temperature dependence of threshold current in< equation> p-doped quantum dot lasers
Ian Sandall
Applied physics …, 2006
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Reducing Thermal Carrier Spreading in InP Quantum Dot Lasers
Stella Elliott
IEEE Journal of Selected Topics in Quantum Electronics, 2015
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Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels
Chao-Yuan Jin
C. Y. Jin, H. Y. Liu, Q. Jiang, M. Hopkinson, and O. Wada, 2008
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Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
Ian Sellers
Applied Physics Letters, 2002
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