Growth phenomena and characteristics of strained In_x Ga_(1− x) As on GaAs (original) (raw)

HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

M. Weyers

Crystal Research and Technology, 2005

Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates

Jose Ignacio Izpura

Microelectronics Journal, 1999

Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

Pablo Vaccaro

Journal of Crystal Growth, 1995

Studies on strained (In,Ga)As/GaAs semiconductors and optical devices

Utpal Das

1987

AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

Pablo Vaccaro

Microelectronics Journal, 1996

Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system

Journal of Electronic Materials, 1996

Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime

Applied Physics Letters, 1988

Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(311)A substrate

Richard Noetzel

Journal of Crystal Growth, 2002

Molecular beam epitaxial growth and luminescence of InxGa1 - xAs/InxAl1 - xAs multiquantum wells on GaAs

Applied Physics Letters, 1987

Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown InxGa

Physical review. B, Condensed matter, 1988

Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells

M. Weyers

Physical Review B, 2009

OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLS

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Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

Georgiy Polupan

Journal of Materials Science: Materials in Electronics, 2017

Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown In_ {x} Ga_ {1-x} As/GaAs quantum wells

Physical Review B, 1988

Band structure calculation of InGaAsN//GaAs, InGaAsN//GaAsP//GaAs and InGaAsN//InGaAsP//InP strained quantum wells

T. Amand

IEE Proceedings - Optoelectronics, 2004

Band edge offsets in strained (InGa)As-(AlGa)As heterostructures

Solid State Communications, 1987

Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy

Itaru Kamiya

Journal of Crystal Growth, 2011

Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

Luke Lester

IEEE Journal of Quantum Electronics, 1991

Thermal Stability of Strained InGaAs/GaAs Single Quantum Wells

Emil Koteles

MRS Proceedings, 1989

Strain-dependent optical emission in In(1-x)Ga(x)As-InP quantum wells

Heloisa Paula

Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

N. Ledentsov

Applied Physics Letters, 1997

Heteroepitaxial selective growth of In[sub x]Ga[sub 1−x]As on SiO[sub 2]-patterned GaAs(001) by molecular beam epitaxy

Steven Brueck

Journal of Applied Physics, 2004

Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers

Journal of Crystal Growth, 1987

Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs

J. Serafińczuk

Strain and optical transitions in InAs quantum dots on (001) GaAs

Y. Fu

Superlattices and Microstructures, 2001

In x Ga 1_x As/GaAs interfaces: from2D islands to quantum dots

Faustino Martelli

Il Nuovo Cimento D, 1998

Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

Christian Lavoie

Applied Physics Letters, 1995

Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

SERGIO I. MOLINA

Materials Science and Engineering: B, 1997

Growth of InxGa1−xAs On silicon by molecular beam epitaxy

A. Christou

Materials Letters, 1989

Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

wenwu pan

Journal of Applied Physics, 2016

High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

M. Weyers

IEEE Photonics Technology Letters, 2002

Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling

A. Siddiqui, Anand Pathak

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998