Design of High Efficient InN Quantum Dot Based Solar Cell (original) (raw)

High Efficiency InGaN Based Quantum Well & Quantum Dot Solar Cell

Julfikar Hossain

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Two intermediate bands solar cells of InGaN/InN quantum dot supracrystals

Qiubo Zhang

Applied Physics A, 2014

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Design and Realization of Wide-Band-Gap ($\sim$2.67 eV) InGaN p-n Junction Solar Cell

Muhammad Akbar Jamil

IEEE Electron Device Letters, 2010

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Near-infrared InN quantum dots on high-In composition InGaN

Paul Soto Rodriguez

Applied Physics Letters, 2013

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Design, growth, fabrication and characterization of high-band gap InGaN/GaN solar cells

Yong Huang

2006

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EFFICIENCY ENHANCEMENT OF WIDE BANDGAP SOLAR CELL BY PROPERLY TUNED INDIUM GALLIUM NITRIDE QUANTUM DOTS

Sadia Sultana

2018

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Impact of heavy hole levels on the photovoltaic conversion efficiency of In Ga1−N/InN quantum dot intermediate band solar cells

kawtar feddi

Superlattices and Microstructures, 2019

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Future prospects of InGaN/GaN Multiple Quantum Well Solar Cells Research for High Quantum Efficiency and Cost effectiveness

servin rathi

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Indium‐rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings

Uttam Kumawat

Energy Science & Engineering

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Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells

juan villa

IEEE Journal of Photovoltaics, 2015

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Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

Larbi Sfaxi

Materials, 2015

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Article Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

Larbi Sfaxi

2016

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High conversion and quantum efficiency indium rich p InGaNp InGaNn InGaN solar cell

habibullah manzoor

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High Performance InGaN-Based Solar Cells

James Speck

2012

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Characterization and analysis of InGaN photovoltaic devices

Ian Ferguson

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005., 2005

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Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells

Yonkil Jeong

IEEE Electron Device Letters , 2010

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Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon

Iulian Gherasoiu

physica status solidi (c), 2011

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The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

Alexander Mellor

Solar Energy Materials and Solar Cells, 2014

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Improvement of performance of GaAs solar cells by inserting self-organized InAs/InGaAs quantum dot superlattices

Ridha Mghaieth

Solar Energy Materials and Solar Cells, 2013

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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Anna Mukhtarova

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Photocurrent and Surface Recombination Mechanisms in the InxGa1-xN\ GaN Different-sized Quantum Dot Solar Cells

Arash Nikniazi, HASSAN BABAEI, Jafar Fathi

Turk. J. …, 2010

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Performance Analysis of Quantum Dot Intermediate Band Solar Cell (QD IBSC)

Nezam Uddin

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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

Esther Clemencia Loaiza López

2012 38th IEEE Photovoltaic Specialists Conference, 2012

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High internal and external quantum efficiency InGaN/GaN solar cells

samantha cruz

Applied Physics Letters, 2011

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Optical properties of InN/GaN quantum dot superlattice by changing dot size and interdot spacing

deborah eric

Results in Physics, 2019

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Indium aggregated quantum dot structures in InGaN compounds

Will Lin

2003

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