H plasma cleaning and aSi passivation of GaAs for surface channel device applications (original) (raw)
Real-time, in situ monitoring of surface reactions during plasma passivation of GaAs
Eray Aydil
Applied Physics Letters, 1993
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Interface of atomic layer deposited HfO[sub 2] films on GaAs (100) surfaces
Derek Demaree
Applied Physics Letters, 2008
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Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C
Keith Evans
Journal of Applied Physics, 1992
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A surface analytical study of GaAs(100) cleaning procedures
John Currie
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
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Effects of surface plasma treatments in relation to electrical isolation in GaAs integrated circuits
J. Morante
Surface Science, 1991
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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
J. Penaud
Surface Science, 2011
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Mechanisms of GaAs surface passivation by a one-step dry process using low-frequency plasma enhanced chemical deposition of silicon nitride
Abdelatif Jaouad
Microelectronic Engineering, 2020
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Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
Carol Ashby
Applied Physics Letters, 2000
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Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure
Kosuke Murase
Japanese Journal of Applied Physics, 2001
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Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study
C. Gong
Journal of Applied Physics, 2011
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H-induced passivation of GaAs(110)-Be surface-acceptor systems
Guan-Seng Khoo
Physical review. B, Condensed matter, 1993
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Surface passivation of GaAs using a Ge interface control layer
G. Ecke
physica status solidi (a), 2005
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Optical and electrical characterization of n-GaAs surfaces passivated by N< sub> 2–H< sub> 2 plasma
Vincenzo Augelli
2003
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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
Etién Paz Aguilar
Applied Physics Letters, 2007
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Optical and electrical characterization of n-GaAs surfaces passivated by N2–H2 plasma
L. Schiavulli, Teresa Ligonzo, Vito Capozzi
Journal of Luminescence, 2003
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In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction
Christophe Rossel
Microelectronic Engineering, 2007
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Origin of HfO2/GaAs interface states and interface passivation: A first principles study
Kyeongjae Cho
Applied Surface Science, 2010
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The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
Damon Carrad
Journal of Physics Condensed Matter
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Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO[sub 2] Gate Dielectrics
Hyeongtag Jeon
Electrochemical and Solid-State Letters, 2006
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Self-aligned n-channel GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization
Jack Le
Microelectronic Engineering, 2009
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III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap
Dagmar Gregusova
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2015
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High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
V. Tokranov
Materials Science and Engineering: B, 2006
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Interfacial self cleaning during atomic layer deposition and annealing of HfO[sub 2] films on native (100)-GaAs substrates
Veena Misra
Applied Physics Letters, 2010
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A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
Lorinda Tan
2008 IEEE International Electron Devices Meeting, 2008
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c-v-ω andG-v-ω characteristics of native Oxide-GaAs interfaces of <111> and <100> orientations
Brij Mohan Arora
physica status solidi (a), 1986
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Sulfur passivation effect on HfO2/GaAs interface: A first-principles study
Ehecatl P.
2011
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N[sub 2]–H[sub 2] remote plasma nitridation for GaAs surface passivation
Giovanni Bruno
Applied Physics Letters, 2002
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Sulfide and Fluoride Ions Based Passivation of GaAs(100) Surface and Concept of Combining Surface Passivation with Tunnel Junction Based Molecular Devices
Dr. Pawan Tyagi
2019
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Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum
Christoph Adelmann
Applied Physics Letters, 2011
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Effective Surface Passivation by Novel $\hbox{SiH}_{4}$ –$\hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility <formula form...
Thanh Huong Phung
IEEE Transactions on Electron Devices, 2010
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Sulfur passivation effect on HfO[sub 2]/GaAs interface: A first-principles study
Kyeongjae Cho
Applied Physics Letters, 2011
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Surface passivation of III-V semiconductors for future CMOS devices--Past research, present status and key issues for future
Alina Domanowska
Applied Surface …, 2010
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Low-energy particle treatment of GaAs surface
Jan Ivanco
Thin Solid Films, 2003
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