Towards a new concept of photomultiplier based on silicon technology (original) (raw)

New silicon technologies enable high-performance arrays of single photon avalanche diodes

SPIE Proceedings, 2013

In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency at the longer wavelengths (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we will analyze the factors the currently prevent the fabrication of arrays of SPADs by adopting such a Red-Enhanced (RE) technology and we will propose further modifications to the device structure that will enable the fabrication of high performance RE-SPAD arrays for photon timing applications.

Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35µm technology

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015

Some decades ago single photon detection used to be the terrain of photomultiplier tube 9 (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several 10 disadvantages such as low quantum efficiency, overall dimensions, and cost, making 11 them unsuitable for compact design of integrated systems. So, the past decade has seen a 12 dramatic increase in interest in new integrated single--photon detectors called Single--13

Single-photon avalanche photodiodes with integrated quenching resistor

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2008

In this paper we present the results of the first electrical and optical characterization performed on STMicroelectronics new photosensor technology based on silicon single-photon avalanche photodiodes (SPAD). On the prospective of the design and the manufacturing of large-area silicon photomultipliers to be used as photodetectors for nuclear medicine imaging applications, we have modified our previous SPAD technology by means of the integration of a high-value quenching resistor to the photodiode. Moreover, an appropriate antireflective coating layer and the reduction of the quasi-neutral region thickness above the thin junction depletion layer have been introduced in the process flow of the device to enhance its spectral response in blue and near ultraviolet wavelength ranges. High gain, low leakage currents, low dark noise, very good quantum detection efficiency in blue-near UV ranges and a good linearity of the photodiode response to the incident luminous flux are the main characterization results. r

A CMOS Compatible Single-Photon Avalanche Diode

Single-Photon Avalanche Diodes (SPAD) are a solid-state alternative to photomultipliers (PMT, vacuum tube detectors) for measuring very faint and/or fast optical signals. A SPAD device compatible with a standard CMOS technology is presented. The detector noise is very low: the dark counting-rate at room temperature is 30-40 c/s for 10µm-diameter devices and less than 5kc/s for 40µm-50µm devices. High time resolution is achieved, up to 60ps.

Electronics for single photon avalanche diode arrays

Sensors and Actuators A: Physical, 2007

This is the second of two serial papers dealing with single photon avalanche diode (SPAD) topics. Aim of the series is to discuss in depth the features and device structures of the array chip we developed (in the first paper) and the required fast electronics and the overall performance reached in passive, active, and gated regime (in this second paper). Main motif of the two papers is to present a compact system for 2D counting and time-tagging of single photons, based on a monolithic array sensor of 60 pixels, the single photon avalanche diode array (SPADA). In this second paper we review the electronics needed to actively quench and actively reset each pixel after avalanche ignition, namely the active-quenching circuit (AQC), since the features of such quenching electronics dramatically affect the operating conditions of the array detector and its actual performance. Design criteria, performances and technological process for manufacturing integrated AQCs will be thoroughly discussed.

Tip Avalanche Photodiode—A New Generation Silicon Photomultiplier Based on Non-Planar Technology

IEEE Sensors Journal, 2021

The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are gradually approaching to a saturation. In this work we present our new concept to overcome the intrinsic limitations of planar configurations of electrodes. Our non-planar technology is based on focusing and enhancing the electric fields by tip-like electrodes. The shape of the electric field and the lack of typical micro-cell edges, allows us to exclude cell separation boundaries and eliminate dead space around active cell areas. Our design provides a high-density micro-cell layout with a high geometric efficiency. It resolves the well-known trade-off between the detection efficiency and the dynamic range. The first "Tip Avalanche Photodiode" (TAPD) prototypes show a remarkable geometric efficiency above 80 % for a micro-cell pitch of 15 µm. This directly translates into a photon detection efficiency (PDE) record peak value of 73 % at 600 nm with respect to the state-of-the-art SiPMs. Moreover, the PDE remains above a value of 45 % up to a wavelength of 800 nm with another record value of 22 % at 905 nm. The reduced micro-cell capacity allows for a fast recovery time below 4 ns, which improves the operation at high photon rates. Overall, the TAPD is anticipated to be a very promising SiPM generation for various wide-spectral and high-dynamic-range applications in health science, biophysics, particle physics and LiDARs.

Recent developments in silicon photomultipliers

Nuclear Instruments and Methods in Physics Research …, 2007

A novel type of avalanche photodetector with Geiger mode operation, known as a Silicon PhotoMultiplier (SiPM) provides an interesting advance in photodetection and is already an alternative to traditional PMTs in many applications. The state of the art of the SiPMs-their main properties and problems-are discussed.

Characterization of the first prototypes of silicon photomultiplier fabricated at ITC-irst

IEEE Transactions on Nuclear Science, 2007

This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20 GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device.