Raman scattering study of crystal perfection of MOVPE-grown GaAs (original) (raw)

LSA operation of large volume bulk GaAs samples

Richard Gilbert

IEEE Transactions on Electron Devices, 1967

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Multi-technique characterization of MOVPE-grown GaAs on Si

chiu soon wong

2010

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Multi-technique characterisation of MOVPE-grown GaAs on Si

Patrick McNally

Microelectronic Engineering, 2011

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Nonstoichiometry, Band STRUCTURE and Origin of Surface States on (100) GaAs Surface Studied by Aes, Pys and Sps

J. Szuber

Studies in Surface Science and Catalysis, 1985

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Molecular beam epitaxy growth of GaAs1−xBix

Angelo Mascarenhas

Applied Physics Letters, 2003

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Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

Kei Lau

Journal of Electronic Materials, 1992

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Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures

Pier Paolo Lottici, Claudio Pelosi

Journal of Crystal Growth, 1996

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Short range electron transport in GaAs

Jess H. Brewer

Physica B: Condensed Matter, 2003

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Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

A. Kahn

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004

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Carrier recombination processes in GaAsN: from the dilute limit to alloying

Joseph Salzman

IEE Proceedings - Optoelectronics, 2004

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Effective band‐gap shrinkage in GaAs

Eric Harmon

Applied Physics Letters, 1994

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Structural study of Ge/GaAs thin films

Leonardo Lari

Journal of Physics: Conference Series, 2012

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Be diffusion in molecular beam epitaxy-grown GaAs structures

Paolo Bussei

Journal of Applied Physics, 2003

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Selective epitaxial growth of GaAs on Ge by MOCVD

Maarten Leys

Journal of Crystal Growth, 2006

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Raman gain measurements in bulk glass samples

Robert Stegeman

Journal of the Optical Society of America B, 2005

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Phonon-drag images of GaAs and AlAs quantum wells

Dietmar Lehmann

Journal of Physics: Conference Series, 2008

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Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures

M. Geddo

Journal of Applied Physics, 2011

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Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE

Patricia Lustoza de Souza

Journal of Crystal Growth, 2016

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Electron Raman Scattering and Raman Gain in Pyramidal Semiconductor Quantum Dots

carlos duque

Journal of Nanoscience and Nanotechnology, 2017

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Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

Amar Joshi

Journal of Crystal Growth, 1992

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Mössbauer study of Fe in GaAs following 57Mn + implantation

Krish Bharuth-Ram

Hyperfine Interactions, 2009

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First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

Dhonny Bacuyag

AIP Advances, 2018

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AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

Laurent Auvray

Journal of Crystal Growth, 2000

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The atypical temperature evolution of the phonon modes of GaAsN

Joseph Salzman

physica status solidi (c), 2004

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Fundamentals of Semiconductors

Ratchagree Amornlikitsin

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