Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide (original) (raw)
Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
JinSoo Kim
Journal of Crystal Growth, 2004
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Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots
Oumar Niasse
Research Journal of Applied Sciences, Engineering and Technology, 2013
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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
Bouraoui ILAHI
Applied Physics A, 2005
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Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs∕GaAs quantum well
Zhe Feng
Journal of Applied Physics, 2007
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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission
Joel Huerta
Acta Physica Polonica A, 2017
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Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxy
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Journal of Crystal Growth, 2003
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Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates
Pierre Basmaji
Superlattices and Microstructures, 1997
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Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate
Larbi Sfaxi
Journal of Luminescence, 2012
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1.59 mum room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates
Luca Seravalli
Applied Physics Letters, 2008
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Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer
Ingri Jazmin Guerrero Moreno
Superlattices and Microstructures, 2014
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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
Tai-Yuan Lin
Materials Science and Engineering: B, 2010
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Optical properties of InAs quantum dots: Common trends
Faustino Martelli
1999
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Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells
Alexander Tonkikh
Technical Physics Letters, 2002
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Low density InAs/(In)GaAs quantum dots emitting at long wavelengths
Luca Seravalli
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Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures
Georgiy Polupan
Journal of Materials Science: Materials in Electronics, 2017
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59 m room temperature emission from metamorphic InAs/ InGaAs quantum dots grown on GaAs substrates
Luca Seravalli
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Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells
Ingri Jazmin Guerrero Moreno
Journal of Luminescence, 2014
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Photoluminescence variation in InAs quantum dots embedded in InGaAs/AlGaAs quantum wells at thermal annealing
Ingri Jazmin Guerrero Moreno
Physica E: Low-dimensional Systems and Nanostructures, 2013
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MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers
Philippe Gilet
Journal of Crystal Growth, 2005
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Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm
Benoit Deveaud
Applied Physics Letters, 2002
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Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
Jen-inn Chyi
Japanese Journal of Applied Physics, 1999
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The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
Luca Seravalli
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Photoluminescence study and parameter evaluation in InAs quantum dot-in-a-well structures
Erick Lozada
Materials Science and Engineering: B, 2011
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1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers
BAOLAI LIANG
Applied Physics Letters, 2010
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Enhancing luminescence efficiency of InAs quantum dots at 1.5 μm using a carrier blocking layer
Jen-inn Chyi
Applied Physics Letters, 2006
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Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs
Nikolay Bert
physica status solidi (b), 2019
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Photoluminescence Intensity Enhancement in Self-assembled InAs Quantum Dots Grown on (3 1 1)B and (1 0 0) GaAs
Almontaser Khatab
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Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy
Chingting Lee
Solid-State Electronics, 1998
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Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb
Joaquín García
Applied Physics Letters, 2005
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Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate
Vitaliy Dorogan
Proceedings of SPIE - The International Society for Optical Engineering, 2009
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Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature
Alexander Tonkikh
Semiconductors, 2003
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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
Somsak Panyakeow
Nanoscale Research Letters, 2011
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Emission dynamics of InAs self-assembled quantum dots with different cap layer structures
Zhe Feng
Semiconductor Science and Technology, 2008
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Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
Alexander Tonkikh
Technical Physics Letters, 2002
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Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm
Wolfgang Langbein
Applied Physics Letters, 2000
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