Artifacts: Colors of Status and Belief (original) (raw)
Failure Analysis of Ceramic Substrates Used in High Power IGBT Modules
David Malec
Engineering, 2016
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Interface studies of silicon nitride dielectric layers
kathy barla
Journal of Non-Crystalline Solids, 2001
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Some Factors Affecting the Breakdown Strength of Solid Dielectrics: A Short Review
Michael Danikas
Engineering, Technology & Applied Science Research
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Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes
Herma van Kranenburg
IEEE Transactions on Electron Devices, 1996
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Thermal evaluation of metalized ceramic substrates for use in next-generation power modules toward international standardization
Shijo Nagao
2020
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Characterisation of power modules ceramic substrates for reliability aspects
zoubir khatir
Microelectronics Reliability, 2009
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Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
Marie-Laure Locatelli
2003
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Insulation Materials and Systems for Power Electronics Modules: A Review Identifying Challenges and Future Research Needs
Mona Ghassemi
IEEE Transactions on Dielectrics and Electrical Insulation
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The dielectric breakdown properties, current density-voltage and capacitance-voltage characteristics of ion-beam-synthesized Si3N4 layers
ASHISH YADAV
Thin Solid Films, 1983
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Development of Failure Tolerant Multi-Layer Silicon Nitride Ceramics: Review from Macro to Micro Layered Structures
Mykola Lugovy
Key Engineering Materials, 2007
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Thermal Stability of Silicon Carbide Power Diodes
Cyril Buttay
IEEE Transactions on Electron Devices, 2000
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Microstructure Characteristics Related to the High Temperature Fracture Resistance of the ESIS Silicon Nitride Reference Material
F. Cambier
2002
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Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules
Chad O'Neal
Journal of Electronic Materials, 2015
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Breakdown characteristics of polyethylene/silicon nitride nanocomposites
A. Azmi, TELKOMNIKA JOURNAL
TELKOMNIKA Telecommunication Computing Electronics and Control, 2019
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reakdown of Amo ich Silicon Nitride Thin Fil
Herma van Kranenburg
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Failure Analysis of Power Silicon Devices at Operation above 200°C Junction Temperature
Octavian Buiu
2007
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Mechanical properties of silicon nitride-based ceramics and its use in structural applications at high temperatures
Branko Matovic
Materials Science and Engineering: A, 2010
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Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface
Jamil Akhtar
Physics and Technology of Silicon Carbide Devices, 2012
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Impact of Morphological Features on the Dielectric Breakdown at SiO[sub 2]∕3C-SiC Interfaces
Jens Eriksson
2010
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Silicon nitride as dielectric in the low temperature SiGe HBT processing
Lis Nanver
Microelectronic Engineering, 1997
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Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes
Tamara Isaacs-Smith
ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings, 1996
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Silicon Nitride Ceramics
Stuart Hampshire
Materials Science Forum, 2008
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Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiN x :H/InP and Al/SiN x :H/In 0.53Ga 0.47As structures by DLTS and conductance transient techniques
Salvador Dueñas
Microelectronics Reliability, 2000
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Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging
Mireille Bechara
IEEE Transactions on Power Electronics, 2014
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Characterization of Multi Temperature and Multi RF Chuck Power Grown Silicon Nitride Films by PECVD and ICP Vapor Deposition
Fred Semendy
2010
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Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics
Dr. M. Sultan Bhat
IEEE Transactions on Electron Devices, 1995
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A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications
Cheng-Nan Chang
IEEE Electron Device Letters, 2000
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Editorial: Dielectric Ceramics for Electronic Applications
Mailadil Sebastian
Frontiers in Materials
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Endurance of Thin Insulation Polyimide Films for High-Temperature Power Module Applications
Marie-Laure Locatelli
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013
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Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices
PARAG WAGHMARE
Thin Solid Films, 2001
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