Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy (original) (raw)

Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

Georgiy Polupan

Journal of Physics: Conference Series, 2007

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Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

Olga L. Lazarenkova

Physical Review B, 2004

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Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate

Larbi Sfaxi

Journal of Luminescence, 2012

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MBE synthesis of InAs/GaAs quantum dots and their characterisation

Dushyant C. Kothari

International Conference on Advanced Nanomaterials & Emerging Engineering Technologies, 2013

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Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Salim Al-Harthi

Applied Physics Letters, 2005

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Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxy

m sadeghi

Journal of Crystal Growth, 2003

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High-performance InAs/GaAs quantum dot laser with dot layers grown at 425 oC

yang wang

Chinese Optics Letters, 2013

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Graphene-capped InAs/GaAs quantum dots

Ali Madouri

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2013

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Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

Ricardo Cisneros Tamayo

Superlattices and Microstructures, 2014

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Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures

BAOLAI LIANG

Optics Express, 2007

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Self-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots on GaAsSb/GaAs(001)

Jun Ohta

Applied Physics Express, 2012

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Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates

BAOLAI LIANG

Journal of Applied Physics, 2008

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Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy

Richard Arès

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Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots

Jacek Jasinski

2002

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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

JinSoo Kim

Journal of Crystal Growth, 2004

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Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

Maddalena Patrini

The European Physical Journal B, 2000

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InAs quantum dots grown on InAlGaAs lattice matched to InP

sandra landi

Journal of Crystal Growth, 2003

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Investigation of the InAs/GaAs self-assembled quantum dots using the relationship between the capacitance and the density of states

S. Mergulhão

Physica E: Low-dimensional Systems and Nanostructures, 2001

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InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

BAOLAI LIANG

2006

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Response to “Comment on ‘Thermal annealing effect on the intersublevel transitions in InAs quantum dots’ ” [Appl. Phys. Lett. 80, 4867 (2002)]

Omar Manasreh

Applied Physics Letters, 2002

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1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

Nikolay Cherkashin

Semiconductor Science and Technology, 2000

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Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

Mohammad Rezaul Karim

Applied Physics Letters, 2006

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Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications

D. Klotzkin

Bulletin of Materials Science, 1999

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Post-growth thermal treatment of the InAs/GaAs quantum dots

Adam Babiński, Jacek Jasinski

2000

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Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

Toshiyuki KAIZU

Japanese Journal of Applied Physics, 2001

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