In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface (original) (raw)

Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering

A. Paskaleva

Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on, 2014

View PDFchevron_right

Random and localized resistive switching observation in Pt/NiO/Pt

sejin kim

Physica Status Solidi-rapid Research Letters, 2007

View PDFchevron_right

Resistive switching characteristics of Pt/CeOx/TiN memory device

Ismail Malik

View PDFchevron_right

Effects of metal electrodes on the resistive memory switching property of NiO thin films

Anass Benayad

Applied Physics Letters, 2008

View PDFchevron_right

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface

Yawar Abbas

View PDFchevron_right

An influence of bottom electrode material on electrical conduction and resistance switching of TiO x thin films

Cao Son Tran

The European Physical Journal Applied Physics, 2013

View PDFchevron_right

Improvement of resistance switching characteristics in a thin FeO[sub x] transition layer of TiN/SiO[sub 2]/FeO[sub x]/FePt structure by rapid annealing

Judit Lisoni

Applied Physics Letters, 2010

View PDFchevron_right

Structural and Electrical Characterization of Tin Oxide Resistive Switching

Arka Talukdar

2017

View PDFchevron_right

Regular and Inverted Operating Regimes in TiN/a-Si/TiOx/TiN RRAM Devices

Jan Van Houdt

IEEE Electron Device Letters, 2018

View PDFchevron_right

Schottky barrier height and modulation due to interface structure and defects in Pt|MgO|Pt heterojunctions with implications for resistive switching

Ramesh Mamindla

Journal of Applied Physics, 2020

View PDFchevron_right

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Mrinal Hota

Applied Physics Letters, 2014

View PDFchevron_right

Effect of the top electrode material on the resistive switching of TiO2 thin film

WanGee Kim

Microelectronic Engineering, 2010

View PDFchevron_right

Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

Tohru Tsuruoka

Advanced Functional Materials, 2015

View PDFchevron_right

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

SangHo Rha

Applied Physics A, 2011

View PDFchevron_right

Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

Aile Tamm

Electronics, 2022

View PDFchevron_right

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Sabina Spiga

Microelectronic Engineering, 2008

View PDFchevron_right

Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM

I-wei Chen

Advanced Materials, 2011

View PDFchevron_right

Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

A. Ignatiev

2011

View PDFchevron_right

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

JinSoo Kim

Applied Physics Letters, 2010

View PDFchevron_right

Effect of post annealing on the resistive switching of TiO2 thin film

WanGee Kim

Microelectronic Engineering, 2009

View PDFchevron_right

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

Małgorzata Sowinska

Journal of Applied Physics, 2014

View PDFchevron_right

Device Size Dependent Improved Resistive Switching Memory Performance Using W/TiN Contact

Chao-sung Lai

IEEE Transactions on Nanotechnology, 2000

View PDFchevron_right

In-Depth X-Ray Photoelectron Spectroscopy of Resistive Switching Devices

Gonçalo Narciso

2019

View PDFchevron_right

Resistive switching behavior in TiN/HfO2/Ti/TiN devices

Bernd Tillack, Rolf Kraemer

2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), 2012

View PDFchevron_right

Resistive switching characteristics of Pt/TiO2/Al structure under optical illumination

Abhimanyu Rana

INTERNATIONAL CONFERENCE ON MULTIFUNCTIONAL MATERIALS (ICMM-2019), 2020

View PDFchevron_right

In situ transmission electron microscopy of resistive switching in thin silicon oxide layers

Martial Duchamp

Resolution and Discovery

View PDFchevron_right

In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices

By You

Nanotechnology, 2013

View PDFchevron_right

Effect of electrode type in the resistive switching behaviour of TiO2 thin films

M Zapata-Torres, Eric Noé Hernández Rodríguez

View PDFchevron_right

Resistive switching mechanism of TiO[sub 2] thin films grown by atomic-layer deposition

S. Tiedke, Hee Yeoun Kim

Journal of Applied Physics, 2005

View PDFchevron_right

Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures

Ranju Jung

Japanese Journal of Applied Physics, 2007

View PDFchevron_right