A study of the electrical properties of SbSI synthesized using CVD techniques (original) (raw)
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Antimony Sulphoiodide is most widely studied compound in group V-VI-VII family due to its large number of properties. Varoius methods of synthesis have been reported. We are the first to report synthesis of shiny SbSI crystals by the Chemical Vapor Deposition (CVD) technique using powder of Antimony, Sulphur and Iodine as the starting material. Needle shaped thin crystals of SbSI were found grown vertically on the walls of the quartz tube. Characterizations of the sample were done using different techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX). The charcteristcs peaks in Raman scattering plots (0-500 cm-1) match with the reported results. The compound exibits high resitivity at room temperature in the order of 10 7 Ω-cm and dielectric constant in the order of 10 3 measured at 1 KHz.
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The structural features and morphology of investigated Sb2S3 powder were analyzed by X-ray diffraction and scanning electron microscope techniques. The dependence of dielectric properties and ac conductivity of bulk Sb2S3 as pellet on both of frequency (102–106 Hz) and temperature (303-393 K) were studied. The dielectric constant (121.2-45.8) and dielectric loss (53.3-0.89) displayed noticeable dependence on frequency and in the investigated range of temperature 303-393 K. The frequency dependence of ac conductivity σac(ω) follows up the power relation; σac(ω) = Gωs. The frequency exponent s, diminished with the rise in temperature, implying that the correlated barrier hopping (CBH) is the predominant conduction mechanism. The ac conductivity exhibited a thermally activated nature. The localized states N(EF) values recorded in order of 1018 eV-1.cm-3 at specific temperatures for frequency of 800 Hz. Activation energy ΔE, calculated at different frequencies indicating a decrease from...
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Sb 2 Se 3 is an emerging material among alternative light absorbers for photovoltaic applications. Unlike typical chalcogenides, Sb 2 Se 3 is particularly appealing due to its single stable crystal phase, layered structure with loose binding of no dangling bonds. Nevertheless, a cost-effective electrochemical approach for the synthesis of Sb 2 Se 3 compounds has not been identified, and the Sb 2 Se 3 film with the most favorable [001] preferred orientation has only just been developed. In this study, Sb-rich precursors were prepared electrochemically at −950 mV (vs. Ag/ AgCl), and homogeneous Sb 2 Se 3 thin films were produced using a pre-thermal treatment process prior to the typical selenization process with additional Se coating. This novel procedure notably suppresses potential Sb dissolution into liquid Se due to the formation of polycrystalline Sb-related crystals. As a result, the Sb-rich precursor was successfully transformed into Sb 2 Se 3 thin films with an enhanced perpendicular orientation of the [001] direction. Unfortunately, a high density of voids was produced in the precursor film with two distinguishable layers, and their size increased after selenization. The voids were formed through evolution of H 2 Se gas after the initial electrochemical reaction. The resulting photovoltaic cells demonstrated an energy conversion efficiency of 1.8% in a substrate structure consisting of Mo/Sb 2 Se 3 /CdS/ZnO/ITO.