InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon (original) (raw)
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Nano letters, 2018
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.
Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-µm Optical-Fiber Band
Japanese Journal of Applied Physics, 2004
We report the first observation of single-photon emission from a single InAs/InP quantum dot at a telecommunication wavelength. The single quantum dot was developed through a `double-cap' growth method using metalorganic chemical vapor deposition, and its emission covers a wide spectral range of the optical telecommunication band. Using a pulsed excitation source and gated single-photon detection modules, we observed a photon antibunching behavior through a single-mode optical fiber for an isolated exciton emission line at 1277.1 nm in the O-band (1.3 µm).
Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
Infrared Remote Sensing and Instrumentation XVIII, 2010
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single-Si-nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
Single InAs1-xPx/InP quantum dots as telecommunications-band photon sources
Physical Review B, 2011
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 mu\mumum), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 mu\mumum), these sharp peaks lie on a broad spectral background. In both regions, cascade emission observed by time-resolved photoluminescence confirms that the quantum dots possess discrete exciton and multi-exciton states. Single photon emission is reported for the dots emitting at 1.3 mu\mumum through anti-bunching measurements.
Single-photon generation with InAs quantum dots
New Journal of Physics, 2004
Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed. 14 Acknowledgments 15 References 15
A highly efficient single-photon source based on a quantum dot in a photonic nanowire
Nature Photonics, 2010
The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication, optical quantum information processing and metrology 1 . Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond 2-4 or a semiconductor quantum dot 5-7 . Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions 8 and cavity quantum electrodynamics effects have been applied 1,9-12 . We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire with carefully tailored ends 13 . Under optical pumping, we demonstrate a record source efficiency of 0.72, combined with pure single-photon emission. This non-resonant approach also provides broadband spontaneous emission control, thus offering appealing novel opportunities for the development of single-photon sources based on spectrally broad emitters, wavelength-tunable sources or efficient sources of entangled photon pairs. Efficient solid-state sources of single photons (S4P) conventionally feature a quantum dot (QD) integrated in an optical microcavity. At cryogenic temperatures, QDs display spectrally narrow emission lines compatible with the control of spontaneous emission (SE) based on cavity quantum electrodynamics. The Purcell effect, which arises in high Q-factor and low-volume cavities, dynamically funnels most of the QD SE into a single resonant cavity mode 9-12,14 . If the far-field emission diagram of this mode is directional, as for pillar microcavities, the QD SE can be efficiently collected by external optics. Recently, a vertical cavity surface-emitting laser (VCSEL)-like source associated with an optimized collection setup has led to a usable, detected, single-photon flux as high as 4 MHz (ref. 11). However, the efficiency e of the source, defined as the probability of collecting a photon into the first lens of the optical set-up, remains limited to about 0.4 (refs 11,15), in spite of the impressive progress in microcavity figures of merit over recent years . In fact, the far-field emission pattern of high-Q microcavities is very sensitive to fabrication imperfections, which degrade e (ref. 8). Furthermore, this strategy, based on the Purcell effect, is also restricted to quasi-monochromatic emitters and is effective only over the narrow bandwidth of the cavity resonance.
Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots
Applied Physics Letters, 2012
Quantum dots as single-photon sources have several advantages, such as emitting light over a broad spectral range and being photostable. Quantum dots with densities as low as 1 dot/µm 2 have been achieved using ultra-low-rate epitaxy and single-dot emission measured without apertures or post-growth processing.