Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser (original) (raw)
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To meet the needs of both metallurgy and microelectronics for an efficient nondestructive low temperature technique, we have examined the ArF laser-induced chemical vapour deposition (CVD) of silicon oxide films onto stainless steel and silicon substrates from Sill4 and N20 presursors using argon as buffer gas. Our systematic study of the dependences of deposition rate and film properties on process parameters revealed that the deposition of good quality silica films is possible for N20:SiH 4 flow ratios starting from as low as 3, but different growth behaviour is found when either the NEO or the Sill4 partial pressure is kept constant. A comparison between conventional plasma and laser CVD reveals that the use of lasers greatly enhances one's freedom in tailoring film properties. By tuning the partial pressures, geometry and energy of the beam, fine control of the film properties can easily be achieved in a wide range not available with any other method.
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Continuing our previous work on hydrogenated amorphous silicon deposition with a CW CO 2 laser, out group has performed a systematic study of low-temperature silicon oxide film deposition for passivating purposes. Thus, the parallel configuration and silicon wafers as substrates have been used. Starting from silane-argon mixtures, we have added nitrous oxide as oxidizing agent, resulting in the formation of silicon oxide films on the substrate. Therefore, the growth rate and properties of the films can be tuned widely by changing the SiH4/N20 ratio at a constant partial pressure of silane. Sample characterization was carried out by ellipsometry, FT-IR spectroscopy and etch rate tests.
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Silicon oxides ranging from near stoichiometric to silicon rich silicon oxides can be obtained by plasma enhanced chemical vapour deposition from silane (SiH 4 ) and nitrous oxide (N 2 O) mixtures. During deposition, impurity bonds like Si-H and Si-OH incorporate into the oxide matrix depending on the deposition parameters and mainly on the precursor gas flow ratio, R = Q N2O / Q SiH4 . In this work, plasma deposition from SiH 4 and N 2 O has been modelled, in order to discuss the possible pathways that lead to the thin film composition variations with reactants flow ratio. It has been found that the SiH 2 /SiH 3 ratio determines whether the film deposition takes place through silanol precursors (SiH 3 O, SiH 2 O…), leading to the incorporation of Si-OH bonds into the oxide film, or it is done through SiO, Si and silane hydrides, with the result of oxygen vacancies formation in the films and the introduction of Si-H bonds.
Current Applied Physics, 2009
Silicon oxide thin film Nitrogen-incorporated silicon oxide thin films Plasma enhanced chemical vapor deposition Tetramethoxysilane Optical emission spectroscopy a b s t r a c t Thin oxide films are deposited from tetramethoxysilane (TMOS) with some addition of O 2 (or N 2 O) gas in inductively coupled plasma (ICP) discharges supplied with radio frequency power. The effects of various deposition parameters such as O 2 (or N 2 O) partial pressure ratio, ICP power, and gas pressure on the growth characteristics and properties of the deposited films are investigated. The chemical bonding states of deposited films are analyzed by Fourier transform infrared spectroscopy, and the deposition rate and optical properties are determined from in-situ ellipsometry. For the TMOS=O 2 case, the deposition rate increases with increasing ICP power. Larger oxygen partial pressure ratio decreases the deposition rate. For the TMOS=N 2 O case, higher N 2 O fraction results in a decrease in nitrogen content in the gasphase and in the deposited films, thereby decreasing the refractive index. As the gas pressure increases, the deposition rate increases first and saturates later. Capacitance-voltage measurements are performed in MOS capacitors to obtain the electrical properties of the deposited films. The interface trap density is observed to decrease with increasing ICP power.
Rajshahi University Journal of Science and Engineering, 2016
This work reports the influence of deposition temperature on the deposition of SiO2 films on silicon substrate by using chemical reaction of silicone oil vapor andozone gas at low temperature. An organic solution as a catalyst at atmospheric pressure has been used to enhance the deposition rate of SiO2. The deposition rate of SiO2 films was found to vary with the variation of the concentration of the catalyst and deposition temperature (160°C ~ 260°C). The deposited SiO2 films were confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive index of the as-deposited films were measured by the laser ellipsometry. FT-IR spectra of the as-deposited films were very much similar to those of SiO2 films found in literature. The deposition temperature was found to influence the deposition rate of SiO2 strongly. The maximum deposition rate was found to 17.2 nm per minute for the case of 220°C. The deposition temperature also influenced the refractive index of th...
Physica Status Solidi (c), 2007
SiO 2 films by atmospheric pressure chemical vapor deposition (APCVD) process, using tetraethoxysilane (TEOS) and ozone (O 3 ) as reactant were obtained. The films were deposited on silicon substrates at various temperatures 125, 150, 175, 200, 225 and 250 °C Fourier transforms infrared (FTIR) spectroscopy was used to characterize the SiO 2 films. Absorbance spectrums show the vibration modes corresponding to SiO 2 films. Additional absorption bands due to residual groups were also observed, but they were found to be dependent on the deposition temperature. The observed current flowing through the oxide could be related to these residual groups, mainly to hydroxyl groups.
Vacuum, 2009
Silicon oxide (SiO x ) thin films have been deposited at a substrate temperature of 300 C by inductivelycoupled plasma chemical vapor deposition (ICP-CVD) using N 2 O/SiH 4 plasma. The effect of N 2 O/SiH 4 flow ratios on SiO x film properties and silicon surface passivation were investigated. Initially, the deposition rate increased up to the N 2 O/SiH 4 flow ratio of 2/1, and then decreased with the further increase in N 2 O/ SiH 4 flow ratio. Silicon oxide films with refractive indices of 1.47-2.64 and high optical band-gap values (>3.3 eV) were obtained by varying the nitrous oxide to silane gas ratios. The measured density of the interface states for films was found to have minimum value of 4.3 Â 10 11 eV À1 cm À2 . The simultaneous highest s eff and lowest density of interface states indicated that the formation of hydrogen bonds at the SiO x /c-Si interface played an important role in surface passivation of p-type silicon.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988
Silicon dioxide thin films have been grown by the technique of photochemical-vapor deposition. Deposition was performed using direct dissociation of oxygen by an ultraviolet arc lamp in the presence of silane. The films were deposited for a temperature range of 150 and 350 °C. Deposition rates peaked at a total pressure of 2 Torr, with a rate of 23 nm/min and 68 nm/min at 150 °C and 250 °C, respectively. Film stress is compressive with 1.04±0.14×109 dynes/cm2. Dielectric constant (εox) and breakdown voltage (VB) were measured as 3.6 and 3.2 MV/cm, respectively. Etch rate in a room temperature 1:5 buffered hydrofluoric acid:deionized water solution was below 50 Å/s. The films have promise for application in integrated circuit devices.
Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition
Materials Science in Semiconductor Processing, 2001
SiO 2 thin films have been prepared by plasma-enhanced chemical vapor deposition from SiH 4 and N 2 O precursors by using different values of the N 2 O/SiH 4 flow ratio (g). Rutherford backscattering spectrometry has been employed to obtain the O/Si atomic ratio of the films. Infrared spectroscopy has demonstrated that oxides having the same O/Si atomic ratio are characterized by a different structure. Indeed, from the analysis of the Si-O-Si stretching peaks, we have found that the peak frequency and full-width at half-maximum (FWHM) are dependent on g. Peak position and FWHM have been used to calculate the bond angle distribution of the films. The results have demonstrated the occurrence of a Si-O-Si bond angle relaxation phenomenon in films deposited by using a larger excess of N 2 O. #
EPJ Web of Conferences, 2019
We have analysed changes in the oxidation state of SiO x films produced by pulsed laser deposition in a background gas with different partial pressures of oxygen. The optical properties of the films in IR range are shown to be close to those of SiO 2 while the total oxidation degree is considerably less than 2. It is suggested that the film consists of oxidized and unoxidized regions due to preferential oxidation of the periphery of the silicon ablation plume during expansion. These regions are overlapping in the film if the laser beam is scanned on the target.