original ) (raw )H ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
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2007
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H[sup +] ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
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Journal of Applied Physics, 2004
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Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995
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Journal de Physique IV (Proceedings), 2005
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Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms - NUCL INSTRUM METH PHYS RES B, 1996
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Electrically active defects in as-implanted, deep buried layers in p-type silicon
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