Carrier emission from the electronic states of self-assembled indium arsenide quantum dots (original) (raw)

Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy

Yixin Jin

Physica B: Condensed Matter, 2003

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Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots

M. Skolnick

physica status solidi (b), 2001

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Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots

Jawher Jawher

Materials Science and Engineering: B, 2021

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Hole emission processes in InAs/GaAs self-assembled quantum dots

Jen-inn Chyi

Physical Review B, 2002

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Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots

Yixin Jin

Solid State Communications, 2003

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Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

Y. Golan, S. Khatsevich

Journal of Applied Physics, 2005

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Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots

O. Engstrom

Applied Physics Letters, 2003

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Electron tunneling from quantum dots characterized by deep level transient spectroscopy

O. Engstrom

Applied Physics Letters, 2007

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Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy

M. Missous

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Deep Level Transient Spectroscopy in Quantum Dot Characterization

O. Engstrom

Nanoscale Research Letters, 2008

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Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures

P. Brunkov

Journal of Electronic Materials, 1999

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Absorption and Emission Spectroscopy of Self-Assembled Inas/Gaas Quantum Dots

Steven R Parnell

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The temperature dependence of electrical and optical properties in InAs/GaAs and GaAs/InAs/AlAs self-assembled quantum dots

Ihosvany Camps

Semiconductor Science and Technology, 2006

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Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots

Ridha Mghaieth

Optical and Quantum Electronics, 2017

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Carrier Recombination in InAs/GaAs Self-Assembled Quantum Dots under Resonant Excitation Conditions

Carlos Rudamas

physica status solidi (a), 2002

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Hole and electron emission from InAs quantum dots

P. Brunkov

Applied Physics Letters, 2000

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Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Diónys Rivas

Journal of Applied …, 2012

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Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

Anthony Cullis

Physical Review B, 1996

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Transient spectroscopy of InAs quantum dot molecules

Alexander Tonkikh

Applied Physics Letters, 2004

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Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation

Adriano Cola

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Hole-Related Electrical Activity of InAs/GaAs Quantum Dots

M. Missous

2008

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Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots

A. Bignazzi

Applied Physics Letters, 1996

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Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

Sergei Ostapenko

Journal of Physics: Conference Series, 2007

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Capacitance-voltage measurements in InAs-GaAs self-assembled quantum dots

Fanyao Qu

physica status solidi (c), 2005

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Excited states and energy relaxation in stacked InAs/GaAs quantum dots

Dieter Bimberg

Physical Review B, 1998

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Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure

B. Hamilton

Journal of Applied Physics, 2006

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Transient linear dichroism in InAs/GaAs self-assembled quantum dots

#HumanName:0x007fb7f78b9be0 Chamarro, Jean-michel Gérard

physica status solidi (c), 2004

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InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

Bouraoui ILAHI

Journal of Nanoparticle Research, 2011

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Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Wolfgang Langbein

Applied Physics Letters, 2000

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Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

Jean-pierre Leburton

Physica E: Low-dimensional Systems and Nanostructures, 2001

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Excited states and selection rules in self-assembled InAs/GaAs quantum dots

M. Skolnick

Physical Review B, 1999

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Indications of amplified spontaneous emission in the energy transfer between InAs self-assembled quantum dots

Paulo Morais

Physical Review B, 2004

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Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy

Koichi Maezawa

Journal of Applied Physics, 2000

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Electrical characterization of InAs/GaAs quantum dot structures

O. Engstrom

Materials Science and Engineering: C, 2006

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