Contamination monitoring of Si wafers using photocarrier radiometry (original) (raw)

Applied Physics Letters, 2008

Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry

Adriana Gutiérrez

Physica B: Condensed Matter, 2011

Combined dynamic and steady-state infrared camera based carrier lifetime imaging of silicon wafers

Journal of Applied Physics, 2009

Advances in Contactless Silicon Defect and Impurity Diagnostics Based on Lifetime Spectroscopy and Infrared Imaging

Advances in OptoElectronics, 2007

Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry

Jerias Batista

Journal de Physique IV (Proceedings), 2005

Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

Journal of Applied Physics, 2000

Camera-based photoluminescence lifetime imaging of crystalline silicon wafers

2009

QSS-μPCD measurement of lifetime in silicon wafers: advantages and new applications

Jacek Lagowski, Alexandre Savtchouk

Energy Procedia, 2011

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation

NDT & E International, 2006

Noncontact measurement of transport properties of long-bulk-carrier-lifetime Si wafers using photothermal radiometry

Applied Physics Letters, 1996

Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers

Journal of Applied Physics, 2005

Some challenges in making accurate and reproducible measurements of minority carrier lifetime in high-quality Si wafers

Bhushan Sopori

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014

Non‐contacting measurements of photocarrier lifetimes in bulk‐and polycrystalline thin‐film Si photoconductive devices by photothermal radiometry

1996

Fast Wafer-Level Characterization of Silicon Photodetectors by Photoluminescence Imaging

Ismo T S Rauha

IEEE Transactions on Electron Devices

Simultaneous determination of effective carrier lifetime and resistivity of Si wafers using the nonlinear nature of photocarrier radiometric signals

Journal of Physics D: Applied Physics, 2018

Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects

Physical Review B, 2003

Three-layer photocarrier radiometry model of ion-implanted silicon wafers

Journal of Applied Physics, 2004

Dynamic lifetime imaging based on photoluminescence measurements

2010

Dynamic photoluminescence lifetime imaging for the characterisation of silicon wafers

Physica Status Solidi (rrl), 2010

Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors

Shahidul Hassan

International Journal of Optoelectronic Engineering, 2012

Limitations in the accuracy of photoconductance-based lifetime measurements

Kay Dornich, Karsten Bothe

Solar Energy Materials and Solar Cells, 2012

Temperature and injection dependent lifetime spectroscopy for defect characterization in silicon

Bijaya Babu Paudyal

2010

Silicon Epitaxial Layer Lifetime Characterization

F. Kirscht

Journal of The Electrochemical Society, 2001

A Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

Ravindra Nuggehalli

Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon

Isabel Delgadillo-Holtfort

Journal of Applied Physics, 2005

Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry

Derrick Shaughnessy, Andreas Mandelis

Applied Physics Letters, 2004

Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samples

Torsten Hahn, Kay Dornich

Solar Energy Materials and Solar Cells, 2010

Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

José Barnoya García, Andreas Mandelis

Journal of Applied Physics, 2004

Non destructive electrical defect characterisation and topography of silicon wafers and epitaxial layers

Torsten Hahn, Kay Dornich

Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure

MRS Proceedings, 2006

Determination of the bulk lifetime of bare multicrystalline silicon wafers

Progress in Photovoltaics: Research and Applications, 2010