Cross-sectional characterization of cupric oxide nanowires grown by thermal oxidation of copper foils (original) (raw)

Synthesis of cupric oxide nanowires on spherical surface by thermal oxidationmethod

Materials Letters, 2013

This study describes that CuO nanowires were synthesized by heating copper powder in air. CuO nanowires can grow on the surface of the spherical CuO/Cu 2 O. The samples were heated in the air within the temperature range from 300 1C to 700 1C. The diameter and density of nanowires can be controlled by the heating temperature and time. The products were examined by XRD, SEM and TEM. The morphology, composition, and crystal structure show that the single crystalline CuO nanowires can be synthesized on the surface of the spherical CuO/Cu 2 O and CuO was the only product when the sample was heated at the temperature of 500 1C and higher.

The Synthesis of Highly Aligned Cupric Oxide Nanowires by Heating Copper Foil

Journal of Nanomaterials, 2011

We have investigated the effects of grain size and orientation of copper substrates for the growth of cupric oxide nanowires by thermal oxidation method. Long, less-roughness, high-density, and aligned cupric oxide nanowires have been synthesized by heating (200) oriented copper foils with small grain size in air gas. Long and aligned nanowires of diameter around 80 nm can only be formed within a short temperature range from 400 to 700°C. On the other hand, uniform, smooth-surface, and aligned nanowires were not formed in the case of larger crystallite size of copper foils with (111) and (200) orientation. Smaller grain size of copper foil with (200) orientation is favorable for the growth of highly aligned, smooth surface, and larger-diameter nanowires by thermal oxidation method.

Formation of CuO nanowires on Cu foil

Chemical physics letters, 2004

Cupric oxide, CuO, has many interesting properties. It has a monoclinic crystal structure, and is a p-type semiconductor with a narrow band gap (1.2 eV) [1]. It is also a Mott insulator (3d transition metal monoxide), the electronic structures of which cannot be simply described within the ...

Direct growth of CuO/ITO nanowires by the vapor solid oxidation method

Springer, 2016

In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 °C in air for 3–5 h. The received peak shift of Cu2O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3–3.5 µm and diameter about 100 nm grew vertically over large area

Thermal Oxidation of Copper for Favorable Formation of Cupric Oxide (CuO) Semiconductor

IOSR Journal of Applied Physics, 2013

Thermal oxidation of copper has been restudied to control the formation of photovoltaic active cupric oxide (CuO) phase against the cuprous oxide (Cu 2 O) phase. It has been established that the thermal oxidation of copper is governed by the outward lattice diffusion and grain boundary diffusion of copper ions at the interface. The lattice diffusion favors the formation of Cu 2 O phase whereas grain boundary diffusion favors the formation of CuO phase. In the present work, a fine copper powder is taken as starting material for thermal oxidation to increase the grain boundary diffusion and to study its on phase formation. Further, to suppress the grain boundary diffusion the starting material is chemically passivated with diethylenetriamine and olelamine to chameically passivated the surface defects. Thermal oxidation of these pre-treated materials is carried out in open air at temperature 500 o C and 700 o C to study the phase formation. The resulting materials are characterized by x-ray diffraction and scanning electron microscopy. These studies clearly confirm that grain boundary diffusion or defect mediated diffusion due to small particle size and more surface atoms of copper favor the formation of CuO at low temperature in case of pure copper, whereas the chemical passivation and high temperature heating favours the formation of Cu 2 O phase and hence the resulting material is biphasic. Hence, the present study is useful information in controlling the phase formation of copper oxide to obtain more photoactive material that is CuO.

Synthesis and Characterization of CuO Nanowires

2006

Synthesis of copper oxide nanowires was done heating up copper wires in wet ambient air at 400 and 500degC. The existence of nanowires was confirmed by SEM images and EDX spectroscopy. Nanowires were not formed in nitrogen ambient. The diameters of synthesized nanowires are between 30 to 160 nm and lengths up to 39 mum. SEM image shows that CuO nanowires were formed on top of the oxide grains. Vapor-solid growth mechanism is also suggested for the growth of this nanowire.

Cuprous Oxide Nanowires Prepared by an Additive-Free Polyol Process

Crystal Growth & Design, 2007

The polyol method was employed for the first time to synthesize cuprous oxide nanowires using only a precursor of Cu(II) acetate monohydrate and diethylene glycol (DEG). With careful control of the reaction temperature (190°C), the precursor concentration (0.01-0.1 mol/L), and the reaction time (6 h), we prepared Cu 2 O nanowires with a diameter of approximately 20 nm and a length up to 5 µm. The nanowires were characterized by SEM, TEM, XRD, and IR spectroscopy.

Vertically Aligned CuO Nanometre Scale Wires Synthesized by Thermal Oxidation in Atmospheric Air

2014

In this study vertically aligned copper oxide (CuO) nanometre scale wires were synthesized via two thermal oxidation techniques. The first involved the direct heating of an oxygen free copper substrate on a commercial hotplate at 300 ºC, while second technique involved heat treating a similar copper substrate in a tube furnace over the temperature range from 400 ºC to 600 ºC. Both heat treatments were carried out in atmospheric air without the use of any catalysts. The as-grown CuO wires formed using this facile thermal oxidation were found to have high aspect ratios, mechanically stable and firmly attached to the underlining oxide layer. The size, shape, morphology and composition of the wires were investigated using advanced characterisation techniques such as transmission electron microscopy, field emission scanning electron microscopy and X-ray diffraction.

Synthesis and characterization of CuO nanowires by a simple wet chemical method

Nanoscale Research Letters, 2012

We report a successful synthesis of copper oxide nanowires with an average diameter of 90 nm and lengths of several micrometers by using a simple and inexpensive wet chemical method. The CuO nanowires prepared via this method are advantageous for industrial applications which require mass production and low thermal budget technique. It is found that the concentration and the quantity of precursors are the critical factors for obtaining the desired one-dimensional morphology. Field emission scanning electron microscopy images indicate the influence of thioglycerol on the dispersity of the prepared CuO nanowires possibly due to the stabilization effect of the surface caused by the organic molecule thioglycerol. The Fourier transform infrared spectrum analysis, energy dispersive X-ray analysis, X-ray diffraction analysis, and X-ray photoemission spectrum analysis confirm clearly the formation of a pure phase high-quality CuO with monoclinic crystal structure.

Potentiostatic deposition and characterization of cuprous oxide films and nanowires

Journal of Crystal Growth, 2005

Potentiostatic deposition of cuprous oxide (Cu 2 O) nanowires in polycarbonate membrane by cathodic reduction of alkaline cupric lactate solution has been investigated. These nanowires, characterized by scanning electron microscopy, have uniform diameters of about 100 nm and lengths up to 16 mm. The electrochemical quartz crystal microbalance (EQCM) is used for in situ phase analysis measurements of the thin films, and the phase composition is determined by X-ray diffraction analysis. The electrochemical parameter limits for the deposition of nanowires are reported. The nanowires have been confirmed as crystalline Cu 2 O by powder X-ray diffraction, electronic nanodiffraction and energy dispersive X-ray spectroscopy.