A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range (original) (raw)

2002

A new, analytic large-signal model for N-channel SiGe Modulation Doped Field Ef-fect Transistors (MODFETs) is presented. The model is based on a non-linear equivalent circuit and can be employed to fit the characteristics in the sub-threshold, linear and saturation operating region from DC to high frequencies. In addition to the non-linear I ds current source, gate/drain-and gate/source capacitance elements, it contains a dispersion model to account for the observed low-frequency dispersion effects in the devices. This contribution focuses on the reliable pre-diction of large-signal characteristics such as gain compression and third order intercept points by ex-tending the covered gate-source and drain-source voltage regimes of the model. Device characterisa-tion has been carried out up to 50GHz and allows for the extension of the model's valid frequency range well beyond the device's measured transit frequency of around 40GHz.

High speed Si/SiGe and Ge/SiGe MODFETs

2003

The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

High-Performance SiGe MODFET Technology

MRS Proceedings, 2004

ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

High-frequency SiGe MMICs - an Industrial Perspective (Invited)

After a brief discussion of the recent development of SiGe HBT technology, the state-of- the-art achievement of the technology in circuits implementation is reviewed from an applied perspective, focusing on microwave and mm-wave applications. In particular, the performance of SiGe HBT-based oscillator and receiver front-end ICs are presented and relevant industry issues are addressed.

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