Low Noise Amplifier (LNA) Research Papers (original) (raw)

It is RFIC course notes in Persian language (Farsi) which includes: History of Wireless Systems - Noise Figure (NF) - Nonlinearity - RF Transceiver Architectures - RF Standards - Low Noise Amplifier (LNA) - Mixer - Oscillator - Phase... more

The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we... more

The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we have modeled a LNA for radar reception systems operating around 11 GHz, using the technique of impedance transformations with Smith chart utility. The type of transistor used is: the transistor HEMT AFP02N2-00 of Alpha Industries®. The results show that the modeled amplifier has a gain greater than 20 dB, a noise figure less than 2 dB, input and output reflection coefficients lower than-20 dB and unconditional stability. Keyword: Gain Low noise amplifier (LNA) Matching Noise figure Stability

This paper presents the design and analysis of a dual-band low noise amplifier (LNA) at 2.4 GHz and 5.75 GHz for IEEE 802.11 a/b/g applications. This LNA proposed current-reused topology and presented new Hi-Pass and Lo-Pass matching... more

This paper presents the design and analysis of a dual-band low noise amplifier (LNA) at 2.4 GHz and 5.75 GHz for IEEE 802.11 a/b/g applications. This LNA proposed current-reused topology and presented new Hi-Pass and Lo-Pass matching technique network at the two stage common-source transistor. The LNA used GaAs HEMT transistor to improve the gain and noise figure (NF) matched concurrently at the two frequency bands. The simulation results showed a high gain |S21| of 36.093 dB and 23.152 dB and low NF of 0.735 dB and 0.530 dB for center frequency of 2.4 GHz and 5.75 GHz. The supply voltage for LNA is 2V. Simulation of the design was performed with the Advanced Design System (ADS) software.

This paper presents the design theory of conventional single-ended LNA and differential LNA based on CMOS technology. The design concepts give an useful indication to the design trade-offs associated with NF, gain and impedance matching.... more

This paper presents the design theory of conventional single-ended LNA and differential LNA based on CMOS technology. The design concepts give an useful indication to the design trade-offs associated with NF, gain and impedance matching. Four LNA’s have been designed using technological design rules of TSMC 0.18-µm CMOS technology and this work mainly proposed for IEEE 802.11a applications. With 1.8V supply voltage, the proposed LNA’s achieve a gain higher than 19dB, a noise figure less than 4dB and impedance matching less than -10dB at 5GHz frequency. The goal of this paper is to highlight the efficient LNA architecture for achieving simultaneous gain, noise and input matching at low supply voltage. The performance of all LNA’s are analysed and compared using Agilent’s Advanced Design System Electronic Design Automation tools.

The goal is to illustrate new errors about using the figures-of-merit NF and IIP, by investigating an AGC-less microwatt ultrawideband gm-boosted CMOS RF system with noise/distortion cancellation. The system composed of limiter and LNA is... more

This paper presents the design of dual-band low noise amplifier (LNA) for WLAN IEEE 802.11b/g/a/n wireless applications. A new technique using a cascaded LNA, notch filter and T network impedance matching is proposed. A fully integrated... more

This paper presents the design of dual-band low noise amplifier (LNA) for WLAN IEEE 802.11b/g/a/n wireless applications. A new technique using a cascaded LNA, notch filter and T network impedance matching is proposed. A fully integrated dual band LNA was designed using GaAs pHEMT transistors to increase and improve the gain and noise figure (NF) effectively. The LNA was matched concurrently at the two frequency bands by matching the input and output networks without switching techniques. The post layout simulation shows the power gain |S21| of 33.845 dB and 20.000 dB and NF of 0.946 dB and 0.493 dB for center frequency of 2.4 GHz and 5.75 GHz. The supply voltage for LNA is 2V.

This paper reports an area-efficient LNA design using an active inductor which can be realised in various UHF band receivers. The overall low noise performance of LNA is achieved by cancelling the inductor noise through additional feed... more

This paper reports an area-efficient LNA design using an active inductor which can be realised in various UHF band receivers. The overall low noise performance of LNA is achieved by cancelling the inductor noise through additional feed forward path. This circuit is implemented using 0.18µm CMOS technology with cadence environment and its operating range is 0.4 to 1- GHz. Design is simulated in virtuoso simulator and simulation results are measured. Noise figure is 1.6 to 3.0 dB for the UHF band and power dissipation of overall circuit is 14.03mw at 1.8V supply