Minkyung Jang - Profile on Academia.edu (original) (raw)

Papers by Minkyung Jang

Transformation of ZnTe nanowires to CdTe nanowires through the formation of ZnCdTe–CdTe core–shell structure by vapor transport

Journal of Materials Chemistry, 2008

Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd v... more Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd vapor transport. The composition was controlled by adjusting the reaction time, and the formation of the ZnCdTe–CdTe core–shell nanocable structure as an intermediate was ...

Biochemical and Biophysical Research Communications, 2010

The insulin-like growth factor binding protein (IGFBP) family has been shown to play a role in va... more The insulin-like growth factor binding protein (IGFBP) family has been shown to play a role in various functions such as cell growth, cell death, cell motility, and tissue remodeling. Among the 7 IGFBP family members, IGFBP-5 was recently shown to play an important role in breast cancer biology, especially in breast cancer metastasis. The three-dimensional structure of the mini IGFBP-5 domain (amino acids 40-92) is known, but structural information on the complete N, L, and C domains remains unknown. Due to difficulties associated with expression and crystallization of full-length IGFBP-5, fragments have more frequently been studied. In this study, IGFBP-5 structures containing N, L, and C domains were separately modeled from solved structures in protein data bank (PDB). In addition, the L domain of IGFBP-5 was expressed in Escherichia coli and purified for studying its structural characterization. Despite very low sequence homology, the novel L domain structure of IGFBP-5 was unexpectedly similar to that of the corepressor of repressor element-1 silencing transcription factor (CoREST) linker in the lysine-specific demethylase 1 (LSD1)-CoREST complex. The purified L domain existed as a homogenous dimer in glutaraldehyde cross-linking and exhibited a typical a-helix structure in the circular dichroism (CD) assay. This study has potential applications in medicine and other fields such as drug design, mutational study, and disease prediction.

A study of contention resolution algorithm for ATM-PON system-double queue tree based algorithm

1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Opt... more 1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Optical Network) system that is suitable for providing broadband services. A common broadband PON applicable to many operators increases the world-wide market for the product. ...

Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through CCC– VVV Characterization

IEEE Electron Device Letters, 2011

Considering asymmetry caused by layout, process, and device degradation, separate extraction of t... more Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C -V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.

Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

Journal of The Korean Physical Society, 2011

The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced thresh... more The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced threshold voltage shift (ΔVT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of- states (DOS) model. The NBS-induced negative ΔVT in a-IGZO TFT with a thinner TIGZO is larger than that with a thicker TIGZO. Based on the

Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs

IEEE Electron Device Letters, 2011

ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface... more ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor dm / dV GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with W / L = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011 cm-2eV-1 with a U-shaped distribution over the band gap.

Acs Nano, 2010

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; t... more Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pregrown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions under the more thermodynamically controlled growth conditions.

Effect of CYP2C9 and VKORC1 genotypes on early-phase and steady-state warfarin dosing in Korean patients with mechanical heart valve replacement

Pharmacogenetics and Genomics, 2009

The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was eva... more The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was evaluated for the early-phase and steady-state warfarin dosing in Korean patients with mechanical heart valve replacement. The genotypes of CYP2C9 variants including CYP2C9*3, CYP2C9*13, and CYP2C9*14, and VKORC1 1173C>T were assessed for the association with warfarin dosing in 265 patients whose data were collected for warfarin dose; international normalized ratio (INR), comedication, comorbidity, and other clinical characteristics. In the early phase of warfarin therapy, the combined genotypes of CYP2C9 and VKORC1 caused statistically significant difference in warfarin dose from day 7 of warfarin dosing and the subsequent time course of dose increase showed significant difference among the three different genotypes (P<0.001). Compared with patients with CYP2C9 wild type, the patients with heterozygous CYP2C9 variants have delayed time to reach stable dose [adjusted hazard ratio (HRadj): 0.48; 95% confidence interval (CI): 0.27-0.85] and tended to have high risk for the first INR greater than 3.5 (HRadj: 1.64; 95% CI: 0.98-2.75). The patients with the VKORC1 CT genotype showed no significant difference in the time to reach stable dose but statistically significant low HR for time to first INR greater than 3.5 compared with those with VKORC1 TT genotype (HRadj: 0.25; 95% CI: 0.13-0.51). The observed warfarin maintenance dose was best explained by a model including covariates of age, weight, concurrent congestive heart failure/cardiomyopathy, INR-increasing drugs, aspirin, dietary supplements, and CYP2C9 and VKORC1 genotypes (R=0.56). The heterozygous CYP2C9 and VKORC1 genotypes influence warfarin dosing in an early phase as well as steady state of warfarin therapy in Korean patients with mechanical heart valve replacement.

Nanotechnology, 2009

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. The... more Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm 2 V −1 s −1 and 8.8 × 10 17 cm −3 , respectively. The Seebeck coefficients (−72 μV K −1 ) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

Transformation of ZnTe nanowires to CdTe nanowires through the formation of ZnCdTe–CdTe core–shell structure by vapor transport

Journal of Materials Chemistry, 2008

Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd v... more Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd vapor transport. The composition was controlled by adjusting the reaction time, and the formation of the ZnCdTe–CdTe core–shell nanocable structure as an intermediate was ...

Biochemical and Biophysical Research Communications, 2010

The insulin-like growth factor binding protein (IGFBP) family has been shown to play a role in va... more The insulin-like growth factor binding protein (IGFBP) family has been shown to play a role in various functions such as cell growth, cell death, cell motility, and tissue remodeling. Among the 7 IGFBP family members, IGFBP-5 was recently shown to play an important role in breast cancer biology, especially in breast cancer metastasis. The three-dimensional structure of the mini IGFBP-5 domain (amino acids 40-92) is known, but structural information on the complete N, L, and C domains remains unknown. Due to difficulties associated with expression and crystallization of full-length IGFBP-5, fragments have more frequently been studied. In this study, IGFBP-5 structures containing N, L, and C domains were separately modeled from solved structures in protein data bank (PDB). In addition, the L domain of IGFBP-5 was expressed in Escherichia coli and purified for studying its structural characterization. Despite very low sequence homology, the novel L domain structure of IGFBP-5 was unexpectedly similar to that of the corepressor of repressor element-1 silencing transcription factor (CoREST) linker in the lysine-specific demethylase 1 (LSD1)-CoREST complex. The purified L domain existed as a homogenous dimer in glutaraldehyde cross-linking and exhibited a typical a-helix structure in the circular dichroism (CD) assay. This study has potential applications in medicine and other fields such as drug design, mutational study, and disease prediction.

A study of contention resolution algorithm for ATM-PON system-double queue tree based algorithm

1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Opt... more 1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Optical Network) system that is suitable for providing broadband services. A common broadband PON applicable to many operators increases the world-wide market for the product. ...

Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through CCC– VVV Characterization

IEEE Electron Device Letters, 2011

Considering asymmetry caused by layout, process, and device degradation, separate extraction of t... more Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C -V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.

Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

Journal of The Korean Physical Society, 2011

The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced thresh... more The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced threshold voltage shift (ΔVT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of- states (DOS) model. The NBS-induced negative ΔVT in a-IGZO TFT with a thinner TIGZO is larger than that with a thicker TIGZO. Based on the

Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs

IEEE Electron Device Letters, 2011

ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface... more ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor dm / dV GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with W / L = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011 cm-2eV-1 with a U-shaped distribution over the band gap.

Acs Nano, 2010

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; t... more Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pregrown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions under the more thermodynamically controlled growth conditions.

Effect of CYP2C9 and VKORC1 genotypes on early-phase and steady-state warfarin dosing in Korean patients with mechanical heart valve replacement

Pharmacogenetics and Genomics, 2009

The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was eva... more The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was evaluated for the early-phase and steady-state warfarin dosing in Korean patients with mechanical heart valve replacement. The genotypes of CYP2C9 variants including CYP2C9*3, CYP2C9*13, and CYP2C9*14, and VKORC1 1173C>T were assessed for the association with warfarin dosing in 265 patients whose data were collected for warfarin dose; international normalized ratio (INR), comedication, comorbidity, and other clinical characteristics. In the early phase of warfarin therapy, the combined genotypes of CYP2C9 and VKORC1 caused statistically significant difference in warfarin dose from day 7 of warfarin dosing and the subsequent time course of dose increase showed significant difference among the three different genotypes (P<0.001). Compared with patients with CYP2C9 wild type, the patients with heterozygous CYP2C9 variants have delayed time to reach stable dose [adjusted hazard ratio (HRadj): 0.48; 95% confidence interval (CI): 0.27-0.85] and tended to have high risk for the first INR greater than 3.5 (HRadj: 1.64; 95% CI: 0.98-2.75). The patients with the VKORC1 CT genotype showed no significant difference in the time to reach stable dose but statistically significant low HR for time to first INR greater than 3.5 compared with those with VKORC1 TT genotype (HRadj: 0.25; 95% CI: 0.13-0.51). The observed warfarin maintenance dose was best explained by a model including covariates of age, weight, concurrent congestive heart failure/cardiomyopathy, INR-increasing drugs, aspirin, dietary supplements, and CYP2C9 and VKORC1 genotypes (R=0.56). The heterozygous CYP2C9 and VKORC1 genotypes influence warfarin dosing in an early phase as well as steady state of warfarin therapy in Korean patients with mechanical heart valve replacement.

Nanotechnology, 2009

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. The... more Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm 2 V −1 s −1 and 8.8 × 10 17 cm −3 , respectively. The Seebeck coefficients (−72 μV K −1 ) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.