Minkyung Jang | Yonsei University (original) (raw)
Papers by Minkyung Jang
Journal of Materials Chemistry, 2008
Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd v... more Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd vapor transport. The composition was controlled by adjusting the reaction time, and the formation of the ZnCdTeCdTe coreshell nanocable structure as an intermediate was ...
Biochemical and Biophysical Research Communications, 2010
1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Opt... more 1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Optical Network) system that is suitable for providing broadband services. A common broadband PON applicable to many operators increases the world-wide market for the product. ...
IEEE Electron Device Letters, 2011
Considering asymmetry caused by layout, process, and device degradation, separate extraction of t... more Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C -V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.
Journal of The Korean Physical Society, 2011
The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced thresh... more The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced threshold voltage shift (ΔVT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of- states (DOS) model. The NBS-induced negative ΔVT in a-IGZO TFT with a thinner TIGZO is larger than that with a thicker TIGZO. Based on the
IEEE Electron Device Letters, 2011
ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface... more ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor dm / dV GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with W / L = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011 cm-2eV-1 with a U-shaped distribution over the band gap.
Pharmacogenetics and Genomics, 2009
The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was eva... more The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was evaluated for the early-phase and steady-state warfarin dosing in Korean patients with mechanical heart valve replacement. The genotypes of CYP2C9 variants including CYP2C9*3, CYP2C9*13, and CYP2C9*14, and VKORC1 1173C>T were assessed for the association with warfarin dosing in 265 patients whose data were collected for warfarin dose; international normalized ratio (INR), comedication, comorbidity, and other clinical characteristics. In the early phase of warfarin therapy, the combined genotypes of CYP2C9 and VKORC1 caused statistically significant difference in warfarin dose from day 7 of warfarin dosing and the subsequent time course of dose increase showed significant difference among the three different genotypes (P<0.001). Compared with patients with CYP2C9 wild type, the patients with heterozygous CYP2C9 variants have delayed time to reach stable dose [adjusted hazard ratio (HRadj): 0.48; 95% confidence interval (CI): 0.27-0.85] and tended to have high risk for the first INR greater than 3.5 (HRadj: 1.64; 95% CI: 0.98-2.75). The patients with the VKORC1 CT genotype showed no significant difference in the time to reach stable dose but statistically significant low HR for time to first INR greater than 3.5 compared with those with VKORC1 TT genotype (HRadj: 0.25; 95% CI: 0.13-0.51). The observed warfarin maintenance dose was best explained by a model including covariates of age, weight, concurrent congestive heart failure/cardiomyopathy, INR-increasing drugs, aspirin, dietary supplements, and CYP2C9 and VKORC1 genotypes (R=0.56). The heterozygous CYP2C9 and VKORC1 genotypes influence warfarin dosing in an early phase as well as steady state of warfarin therapy in Korean patients with mechanical heart valve replacement.
Journal of Materials Chemistry, 2008
Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd v... more Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd vapor transport. The composition was controlled by adjusting the reaction time, and the formation of the ZnCdTeCdTe coreshell nanocable structure as an intermediate was ...
Biochemical and Biophysical Research Communications, 2010
1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Opt... more 1. Introduction FSAN GX has discussed on the cost-effective way to deploy the ATM-PON(Passive Optical Network) system that is suitable for providing broadband services. A common broadband PON applicable to many operators increases the world-wide market for the product. ...
IEEE Electron Device Letters, 2011
Considering asymmetry caused by layout, process, and device degradation, separate extraction of t... more Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C -V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.
Journal of The Korean Physical Society, 2011
The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced thresh... more The effect of the active layer thickness (TIGZO) on the negative bias stress (NBS)-induced threshold voltage shift (ΔVT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of- states (DOS) model. The NBS-induced negative ΔVT in a-IGZO TFT with a thinner TIGZO is larger than that with a thicker TIGZO. Based on the
IEEE Electron Device Letters, 2011
ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface... more ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor dm / dV GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with W / L = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011 cm-2eV-1 with a U-shaped distribution over the band gap.
Pharmacogenetics and Genomics, 2009
The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was eva... more The effect of CYP2C9 and vitamin K epoxide reductase complex subunit 1 (VKORC1) genotypes was evaluated for the early-phase and steady-state warfarin dosing in Korean patients with mechanical heart valve replacement. The genotypes of CYP2C9 variants including CYP2C9*3, CYP2C9*13, and CYP2C9*14, and VKORC1 1173C>T were assessed for the association with warfarin dosing in 265 patients whose data were collected for warfarin dose; international normalized ratio (INR), comedication, comorbidity, and other clinical characteristics. In the early phase of warfarin therapy, the combined genotypes of CYP2C9 and VKORC1 caused statistically significant difference in warfarin dose from day 7 of warfarin dosing and the subsequent time course of dose increase showed significant difference among the three different genotypes (P<0.001). Compared with patients with CYP2C9 wild type, the patients with heterozygous CYP2C9 variants have delayed time to reach stable dose [adjusted hazard ratio (HRadj): 0.48; 95% confidence interval (CI): 0.27-0.85] and tended to have high risk for the first INR greater than 3.5 (HRadj: 1.64; 95% CI: 0.98-2.75). The patients with the VKORC1 CT genotype showed no significant difference in the time to reach stable dose but statistically significant low HR for time to first INR greater than 3.5 compared with those with VKORC1 TT genotype (HRadj: 0.25; 95% CI: 0.13-0.51). The observed warfarin maintenance dose was best explained by a model including covariates of age, weight, concurrent congestive heart failure/cardiomyopathy, INR-increasing drugs, aspirin, dietary supplements, and CYP2C9 and VKORC1 genotypes (R=0.56). The heterozygous CYP2C9 and VKORC1 genotypes influence warfarin dosing in an early phase as well as steady state of warfarin therapy in Korean patients with mechanical heart valve replacement.