titanium-doped laser gain media (original) (raw)

Definition: laser gain media doped with titanium ions

Category: article belongs to category laser devices and laser physics laser devices and laser physics

Related: titanium-sapphire laserstransition-metal-doped laser gain media

DOI: 10.61835/r42 Cite the article: BibTex BibLaTex plain textHTML Link to this page! LinkedIn

Content quality and neutrality are maintained according to our editorial policy.

📦 For purchasing titanium-doped laser gain media, use the RP Photonics Buyer's Guide — an expert-curated directory for finding all relevant suppliers, which also offers advanced purchasing assistance.

Contents

Titanium (chemical symbol: Ti) is a chemical element belonging to the group of transition metals. Trivalent titanium ions (Ti3+) can be used as laser-active dopants of laser gain media. They have very broad vibronic absorption and emission bands, which enables wide wavelength tunability and the generation of ultrashort pulses.

To date, only Ti:sapphire has achieved broad practical success; a few other Ti-doped hosts have been investigated and are briefly noted below.

Titanium-doped Sapphire

Titanium-doped sapphire (Ti3+:sapphire, sometimes Ti:Sa) is used mainly for tunable lasers and for femtosecond solid-state lasers. Introduced in 1986 [1], Ti:sapphire rapidly displaced most dye lasers in ultrashort-pulse generation and widely wavelength-tunable lasers. Ti:sapphire lasers are also convenient pump lasers for testing new solid-state media (e.g., Nd- or Yb-based), because they tune to the required pump line and deliver high brightness thanks to excellent beam quality and multi-watt power.

Ti:sapphire is predominantly used as bulk laser crystals, but engineered waveguides also exist (see below).

Because pump requirements dominate the cost, Ti:sapphire is typically chosen when its exceptional tunability or ultrashort-pulse performance is essential.

In the following sections, the key properties of Ti:sapphire are explained:

Excellent Thermal Properties

Sapphire (single-crystal Al2O3) has high thermal conductivity and good thermal shock resistance. It minimizes beam distortions by thermal lensing at high power.

Large Gain Bandwidth

With its vibronic emission band, the Ti3+ ion has a very large gain bandwidth (much larger than that of rare-earth-doped laser gain media), allowing the generation of extremely short laser pulses and also wide wavelength tunability (typically using a birefringent tuner).

Small-signal gain and efficiency peak near 800 nm; practical emission typically spans roughly 700–900 nm. With suitable optics, tuning from ≈650 nm up to ≈1100 nm is possible, though covering that full span in one resonator usually requires swapping mirror sets (or using ultrabroadband chirped mirrors).

Pumping of Ti:sapphire

Ti:sapphire offers a wide pump band, strongest in the blue-green with an absorption maximum near 490 nm. Common pump sources are 514 nm argon ion lasers, 527/532 nm frequency-doubled diode-pumped solid-state lasers, and high-power 515–525 nm laser diodes. The gain efficiency (in dB/W) is modest because the σ–τ product is small — an inherent consequence of the broad emission band. Consequently, high pump radiance is needed; multi-watt pump powers are typical for bulk lasers (often 3–10 W and up to 20 W for demanding setups), while waveguides can work with much lower pump powers.

Ti3+ Doping Concentration

The Ti3+ doping concentration has to be kept low (typically 0.05% to 0.25%) because otherwise no good crystal quality is achievable. The therefore limited pump absorption usually enforces the use of a crystal length of several millimeters, which in combination with the small pump spot size (for high pump intensity) means that a rather high pump radiance (brightness) is required.

Ti4+ Content

Ideally, a Ti:sapphire crystal would contain only Ti3+ ions and no Ti4+, but some small amount of Ti4+ is unfortunately hard to avoid (especially in the presence of impurities like Fe2+). This causes parasitic absorption at the laser wavelength, which deteriorates the laser performance. Details of fabrication processes often need to be optimized such that primarily Ti3+ is obtained.

In order to quantify the quality of Ti:sapphire crystals in that respect, one often uses a figure of merit (FOM) which is defined as the ratio of absorption coefficients at the pump and laser wavelengths — typically, with 514 nm or 532 nm as the pump wavelength and something around 800 nm as the laser wavelength.

Upper-state Lifetime and Transition Cross-sections

The upper-state lifetime of Ti:sapphire is short (3.2 Îźs) because of relatively high emission cross-sections and the broad emission bandwidth. The saturation power is very high (far higher, for example, than for Yb:YAG) and the gain efficiency relatively low. This means that the pump intensity needs to be high, so that a strongly focused pump beam and thus a pump source with high beam quality is required.

Figure 1: Transition cross-sections of Ti3+:sapphire for ($\pi$) and ($\sigma$) polarization. Source: Evgeni Sorokin, TU Wien.

Despite the huge emission bandwidth, Ti:sapphire has relatively high laser cross-sections, which reduces the tendency of Ti:sapphire lasers for Q-switching instabilities.

Ti:sapphire Waveguides

Bulk Ti:sapphire demands substantial pump power because of its low gain efficiency. Waveguides mitigate this by maintaining a small effective mode area over significant length. Various technical approaches for waveguide fabrication have been demonstrated:

Property Value
chemical formula Ti3+:Al2O3
crystal structure hexagonal
mass density 3.98 g/cm3
Moh hardness 9
Young's modulus 335 GPa
tensile strength 400 MPa
melting point 2040 °C
thermal conductivity 33 W / (m K)
thermal expansion coefficient ≈ 5 · 10−6 K−1
thermal shock resistance parameter 790 W/m
birefringence negative uniaxial
refractive index at 633 nm 1.76
temperature dependence of refractive index 13 · 10−6 K−1
Ti density for 0.1% at. doping 4.56 · 1019 cm−3
fluorescence lifetime 3.2 Îźs
emission cross-section at 790 nm (polarization parallel to the c axis) 39 · 10−20 cm2

Table 1: Optical, mechanical and other properties of Ti3+:sapphire crystals as used for lasers.

Besides Ti:sapphire, some other Ti-doped laser media have been investigated, but with limited success:

Titanium-doped Chrysoberyll

In the same year as the first demonstration of Ti:sapphire (1986), a tunable laser based on Ti3+:BeAl2O4 was reported [2]. However, that material has found very little attention later on, as its properties are less favorable than those of Ti:sapphire.

Titanium-doped YAG

YAG is yttrium aluminum garnet (Y3Al5O12), a common crystal material with cubic symmetry. YAG lasers are mostly based on laser crystals doped with rare earth ions such as neodymium, ytterbium, erbium or thulium-doped laser gain media, sometimes with the transition metal chromium (Cr4+). A rare case is doping with Ti3+. Ti:YAG crystals show broad absorption and fluorescence [4] for green pumping, but the quantum efficiency and achievable gain are well below Ti:sapphire.

Titanium-doped Lithium Aluminate (Ti:LiAlO2)

Ti:LiAlO₂ single crystals have been grown as large high-purity crystals [21]. They display thermoluminescence and photo-stimulated luminescence, suggesting that Ti3+ creates optically active centers. However, there appears to be no report of successful lasing.

Titanium-doped forsterite (Ti:Mg2SiO4)

Crystals of Ti-doped forsterite grown by the Czochralski technique have been studied for potential tunable laser applications [7]. Spectroscopic studies confirm Ti3+ substitution in the host lattice, with visible and near-infrared absorption. Experimental data show fluorescence but no reported laser emission, likely due to low emission cross sections and a short excited-state lifetime.

Suppliers

Sponsored content: The RP Photonics Buyer's Guide contains 22 suppliers for titanium-doped laser gain media. Among them:

Shalom EO, supplier of titanium-doped laser gain media

⚙ hardware🧩 accessories and parts🧴 consumables🔧 maintenance, repair📏 metrology, calibration, testing💡 consulting🧰 development

titanium-doped laser gain media

Shalom EO offers high quality Ti:sapphire crystals grown using Temperature Gradient Technique (TGT) with absorption from 1.0 — 4.0 cm–1 @ 490 nm. Titanium-doped sapphire is one of the most prevalent laser crystals for tunable and ultrashort pulsed lasers with high gain and high power outputs.

Shalom EO’s TGT-grown Ti:sapphire crystal is characterized by the (0001) oriented growth, featuring large figure of merit, high gain, broad gain bandwidth, while also exhibiting excellent thermal conduction, large laser cross-section, and exceptional laser damage threshold. Dislocation densities less than 102 cm–2 contributing to minimized light scatter can be obtained. The tunable wavelength range that covers a broad range from 700 nm to 1000 nm makes Ti:sapphire an excellent alternative for dye lasers in many applications such as ultrafast lasers.

Optogama, supplier of titanium-doped laser gain media

⚙ hardware

titanium-doped laser gain media

Titanium-doped sapphire (Ti3+:Al2O3) is widely used for ultrashort pulse generation and broadly tunable laser systems due to its exceptionally wide gain bandwidth of 670–1070 nm and excellent thermal conductivity.

Optogama offers Ti:sapphire crystals with absorption values ranging from 0.2 cm−1 to 7.5 cm−1 at 532 nm, optimized for both oscillator and amplifier applications. High optical quality is ensured, with a Figure of Merit (FOM) > 250 for low-doped material. Crystals are available in large sizes up to 110 × 110 × 40 mm.

These crystals are ideal for high-performance femtosecond lasers, tunable systems, and demanding scientific and industrial applications.

EKSMA OPTICS, supplier of titanium-doped laser gain media

⚙ hardware

titanium-doped laser gain media

Titanium-doped sapphire crystals combine outstanding physical and optical properties with the broadest laser wavelength range. EKSMA Optics offers Ti:sapphire crystals according to your specific requirements.

Bibliography

[1] P. F. Moulton, “Spectroscopic and laser characteristics of Ti:Al2O3”, J. Opt. Soc. Am. B 3 (1), 125 (1986); doi:10.1364/JOSAB.3.000125
[2] A. I. Alimpiev et al., “Tunable BeAl2O4:Ti**3+**laser”, Sov. J. Quantum Electron. 16 (5), 579 (1986); doi:10.1070/qe1986v016n05abeh006585
[3] P. Albers et al., “Continuous-wave laser operation and quantum efficiency of titanium-doped sapphire”, J. Opt. Soc. Am. B 3 (1), 134 (1986); doi:10.1364/JOSAB.3.000134
[4] F. Bantien, P. Albers and G. Huber, “Optical transitions in titanium-doped YAG”, J. Luminescence 36 (6), 363 (1987); doi:10.1016/0022-2313(87)90153-0
[5] A. Sanchez et al., “Room-temperature continuous-wave operation of a Ti:Al2O3 laser”, Opt. Lett. 11 (6), 363 (1986); doi:10.1364/OL.11.000363
[6] A. Sugimoto et al., “Spectroscopic properties of Ti3+-doped BeAl2O4”, J. Opt. Soc. Am. B 6 (12), 2334 (1989); doi:10.1364/josab.6.002334
[7] L. Shenjun et al., “Growth and characteristics of Mg2SiO4: Ti crystal”, J. Crystal Growth 139 (3-4), 327 (1994); doi:10.1016/0022-0248(94)90183-x
[8] E. Gulevich et al., “Current state and prospects for tunable titanium–sapphire lasers”, Proc. SPIE 2095, 102 (1994); doi:10.1117/12.183081
[9] J. F. Pinto et al., “Improved Ti:sapphire laser performance with new high figure of merit crystals”, IEEE J. Quantum Electron. 30 (11), 2612 (1994); doi:10.1109/3.333715
[10] Wu et al., “Growth and laser properties of Ti:sapphire single crystal fibres”, Electron. Lett. 31 (14), 1151 (1995); doi:10.1049/el:19950777
[11] A. Stingl et al., “Sub-10-fs mirror-dispersion-controlled Ti:sapphire laser”, Opt. Lett. 20 (6), 602 (1995); doi:10.1364/OL.20.000602
[12] L. Hickey and J. Wilkinson, “Titanium diffused waveguides in sapphire”, Electron. Lett. 32 (24), 2238 (1996); doi:10.1049/el:19961519
[13] N. Vainos et al., “Planar laser waveguides of Ti:sapphire, Nd:GGG and Nd:YAG grown by pulsed laser deposition”, Applied Surface Science 127-129, 514 (1998); doi:10.1016/s0169-4332(97)00684-3
[14] D. H. Sutter et al., “Semiconductor saturable-absorber mirror-assisted Kerr lens modelocked Ti:sapphire laser producing pulses in the two-cycle regime”, Opt. Lett. 24 (9), 631 (1999); doi:10.1364/OL.24.000631
[15] J. McCallum and L. Morpeth, “Synthesis of Ti:sapphire by ion implantation”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 (1-4), 726 (1999); doi:10.1016/s0168-583x(98)00707-1
[16] L. M. B. Hickey et al., “Diffused Ti:sapphire channel-waveguide lasers”, J. Opt. Soc. Am. B 21 (8), 1452 (2004); doi:10.1364/josab.21.001452
[17] M. Pollnau et al., “Ti:Sapphire waveguide lasers”, Laser Phy. Lett. 4 (8), 560 (2007); doi:10.1002/lapl.200710021
[18] S. Gross, M. J. Withford and A. Fuerbach, “Direct femtosecond laser written waveguides in bulk Ti3+:sapphire”, Proc. SPIE 7589, 75890U (2010); doi:10.1117/12.841462
[19] H. Cao, X. Lu and D. Fan, “Numerical simulation of gain narrowing control by hybrid amplifiers chain based on Ti:sapphire and Ti:chrysoberyl”, Opt. Commun. 284 (6), 1622 (2011); doi:10.1016/j.optcom.2010.11.031
[20] S. Wang et al., “Laser-diode pumped glass-clad Ti:sapphire crystal fiber laser”, Opt. Lett. 41 (14), 3217 (2016); doi:10.1364/ol.41.003217
[21] A. Kilian, P. Bilski and W. Gieszczyk, “Thermoluminescence kinetics of undoped and doped (Ti, Cu, Ce) lithium aluminate crystals”, Radiation Measurements 106, 107 (2017); doi:10.1016/j.radmeas.2017.07.010
[22] T. Yang et al., “Widely tunable, 25-mW power, Ti:sapphire crystal-fiber laser”, IEEE Photon. Technol. Lett. 31 (24), 1921 (2019); doi:10.1109/lpt.2019.2950020
[23] Y. Wang et al., “Photonic-circuit-integrated titanium:sapphire laser”, Nature Photonics 17, 338 (2023); doi:10.1038/s41566-022-01144-2
[24] L. Jiang et al., “Design of a broadband Si3N4 waveguide amplifier based on a gain medium of ion-sliced titanium-doped sapphire”, Opt. Lett. 49 (21), 6221 (2024); doi:10.1364/ol.539406
[25] J. Yang et al., “Titanium:sapphire-on-insulator integrated lasers and amplifiers”, Nature 630 (8018), 853 (2024); doi:10.1038/s41586-024-07457-2

(Suggest additional literature!)

Questions and Comments from Users

Here you can submit questions and comments. As far as they get accepted by the author, they will appear above this paragraph together with the author’s answer. The author will decide on acceptance based on certain criteria. Essentially, the issue must be of sufficiently broad interest.

Please do not enter personal data here. (See also our privacy declaration.) If you wish to receive personal feedback or consultancy from the author, please contact him, e.g. via e-mail.

By submitting the information, you give your consent to the potential publication of your inputs on our website according to our rules. (If you later retract your consent, we will delete those inputs.) As your inputs are first reviewed by the author, they may be published with some delay.