| dbo:abstract |
Die Polysiliziumverarmung ist ein physikalisches Phänomen, das in der Halbleitertechnik bei Feldeffekttransistoren, welche aus dem Gate-Material Polysilizium bestehen (vgl. Silizium-Gate-Technik), auftreten kann. Der Effekt kann und zu unerwünschten Schwankungen der Schwellenspannung einzelner Feldeffekttransistoren sowie einem unvorhersehbaren Verhalten der gesamten elektronischen Schaltung führen. (de) Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. Because of this variation High-k Dielectric Metal Gates (HKMG) were introduced to solve the issue. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. The latter differs from mocrystalline silicon used for semiconductor electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. (en) |
| dbo:thumbnail |
wiki-commons:Special:FilePath/Without_application_of_any_field.png?width=300 |
| dbo:wikiPageExternalLink |
http://blogs.intel.com/jobs/2012/02/28/from-sand-to-silicon-the-making-of-a-chip https://dx.doi.org/10.1149/1.1632873 |
| dbo:wikiPageID |
32402084 (xsd:integer) |
| dbo:wikiPageLength |
7613 (xsd:nonNegativeInteger) |
| dbo:wikiPageRevisionID |
1098418657 (xsd:integer) |
| dbo:wikiPageWikiLink |
dbr:Amorphous_silicon dbr:Electronic_circuit dbr:NMOS_logic dbr:Gate_oxide dbr:Electric_field dbr:MOSFET dbr:Silicon_dioxide dbc:Semiconductor_technology dbc:MOSFETs dbr:Crystalline_silicon dbc:Transistors dbr:Ions dbr:Fermi_level_pinning dbc:Semiconductor_devices dbr:High-κ_dielectric dbr:Threshold_voltage dbr:Dielectric dbr:CMOS dbr:Solar_cells dbr:DIBL dbr:Intel dbr:Work_function dbr:Semiconductor_device dbr:Polycrystalline_silicon dbr:Polysilicon dbr:Hafnium_oxide dbr:Minority_carriers dbr:32nm dbr:High-k_dielectric dbr:Majority_carriers dbr:File:With_application_of_field.png dbr:File:Without_application_of_any_field.png |
| dbp:wikiPageUsesTemplate |
dbt:Div_col dbt:Div_col_end dbt:EngvarB dbt:Math dbt:Reflist dbt:Short_description |
| dct:subject |
dbc:Semiconductor_technology dbc:MOSFETs dbc:Transistors dbc:Semiconductor_devices |
| gold:hypernym |
dbr:Phenomenon |
| rdf:type |
yago:WikicatTransistors yago:WikicatSemiconductorDevices yago:Artifact100021939 yago:Conductor103088707 yago:Device103183080 yago:Instrumentality103575240 yago:Object100002684 yago:PhysicalEntity100001930 dbo:Disease yago:SemiconductorDevice104171831 yago:Transistor104471632 yago:Whole100003553 |
| rdfs:comment |
Die Polysiliziumverarmung ist ein physikalisches Phänomen, das in der Halbleitertechnik bei Feldeffekttransistoren, welche aus dem Gate-Material Polysilizium bestehen (vgl. Silizium-Gate-Technik), auftreten kann. Der Effekt kann und zu unerwünschten Schwankungen der Schwellenspannung einzelner Feldeffekttransistoren sowie einem unvorhersehbaren Verhalten der gesamten elektronischen Schaltung führen. (de) Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. Because of this variation High-k Dielectric Metal Gates (HKMG) were introduced to solve the issue. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. The latter differs from mocrystalline silicon used for semiconductor electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. (en) |
| rdfs:label |
Polysiliziumverarmung (de) Polysilicon depletion effect (en) |
| owl:sameAs |
freebase:Polysilicon depletion effect yago-res:Polysilicon depletion effect wikidata:Polysilicon depletion effect dbpedia-de:Polysilicon depletion effect https://global.dbpedia.org/id/4trwV |
| prov:wasDerivedFrom |
wikipedia-en:Polysilicon_depletion_effect?oldid=1098418657&ns=0 |
| foaf:depiction |
wiki-commons:Special:FilePath/With_application_of_field.png wiki-commons:Special:FilePath/Without_application_of_any_field.png |
| foaf:isPrimaryTopicOf |
wikipedia-en:Polysilicon_depletion_effect |
| is dbo:wikiPageRedirects of |
dbr:Poly_Depletion_Effect dbr:Poly_depletion |
| is dbo:wikiPageWikiLink of |
dbr:Depletion_region dbr:Poly_Depletion_Effect dbr:Poly_depletion |
| is rdfs:seeAlso of |
dbr:Self-aligned_gate |
| is foaf:primaryTopic of |
wikipedia-en:Polysilicon_depletion_effect |
