Richard Reiner | Fraunhofer - Academia.edu (original) (raw)

Papers by Richard Reiner

Research paper thumbnail of Simulation and analysis of low-resistance AlGaN/GaN HFET power switches

Research paper thumbnail of Fractal structures for low-resistance large area AlGaN/GaN power transistors

Research paper thumbnail of Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications

Research paper thumbnail of Novel Layout and Packaging for Lateral, Low-Resistance GaN-on-Si Power Transistors

Research paper thumbnail of Integrated Reverse-Diodes for GaN-HEMT Structures

Research paper thumbnail of 70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Indium Phosphide and Related Materials Conference, 2003

A 70 nm gate length metamorphic HEMT technology will be presented. Extrinsic cut-off frequencies ... more A 70 nm gate length metamorphic HEMT technology will be presented. Extrinsic cut-off frequencies of ft = 293 GHz and fmax = 337 GHz were achieved. The transistors have an on-state breakdown voltage of 1.7 V. A median time to failure of 1×106 h at 125°C and an activation energy of 1.3 eV was extrapolated based on a 10% gm,max

Research paper thumbnail of Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

Microwave, European Conference, 1992

A measurement and analysis technique has been developed that allows for, after s-parameter measur... more A measurement and analysis technique has been developed that allows for, after s-parameter measurements, direct extraction of all four transistor noise parameters from a single noise figure measurement. A simple 50 ¿ noise source measurement system can thus be used for noise parameter extraction, simplifying considerably the measurement of noise parameters and so enablitg fully automated high frequency testing and

Research paper thumbnail of A coplanar 94 GHz low-noise amplifier MMIC using 0.07 μm metamorphic cascode HEMTs

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003

A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utiliz... more A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 μm depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2×30 μm MHEMT device has shown a transit frequency (ft) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1×1 mm2.

Research paper thumbnail of Transistor noise parameter extraction using a 50 Omega measurement system

A 50- Omega noise-figure measurement system has been integrated into a fully automated S-paramete... more A 50- Omega noise-figure measurement system has been integrated into a fully automated S-parameter measurement system, allowing fast determination of transistor noise parameters as well as S-parameters as a function of both frequency and bias. This functionality from such a simple measurement system is achieved using a novel analysis technique, based on the noise temperature model (see M.W. Popieszalski, 1989), that allows, after S-parameter measurements and analysis, the direct extraction of all four transistor noise parameters from a single noise-figure measurement. The value of the unknown temperature Td and the physically relevant small-signal model circuit element values determined provide the CAD (computer-aided design) database necessary to model both the scaling behavior of the transistor S-parameters and noise parameters and their extrapolation to millimeter-wave frequencies.

Research paper thumbnail of Coplanar transceive MMIC for 77 GHz automotive applications based on a nonlinear design approach

Integrated transceive MMICs for automotive applications were realized in coplanar waveguide techn... more Integrated transceive MMICs for automotive applications were realized in coplanar waveguide technology, using a 0.15 μm PM-HEMT process. Based on an analytical nonlinear HEMT model, harmonic balance simulations of the entire chip, comprising up to 7 devices, showed good agreement with the measured power performance of the transmit and the receive paths. For the resistive mixer, a DSB noise temperature of only 297 K was measured

Research paper thumbnail of Compact monolithic coplanar 94 GHz front ends

… Digest, 1997., IEEE …, 1997

Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 pm AIGaAdlnGaAs /GaAs PM-HEM... more Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 pm AIGaAdlnGaAs /GaAs PM-HEMT technology are described. The MMlCs consist of a multistage low noise RF amplifier, a mixer, and an LO buffer amplifier. Balanced diode and single ended resistive HEMT mixers were investigated. A conversion gain of 13dB and a DSB noise figure of 6.5 dB were obtained with a very compact 1 x 4 mm2 front end MMIC, employing cascode amplifiers and a balanced rat race diode mixer. The chip size is substantially less than that of any receiver chip published to date.

Research paper thumbnail of High performance MMICs in coplanar waveguide technology for commercial V-band and W-band applications

IEEE Control Systems Magazine - IEEE CONTROL SYST MAG, 1994

We have designed and fabricated a family of coplanar MMICs based on a 0.16 μm gate length pseudom... more We have designed and fabricated a family of coplanar MMICs based on a 0.16 μm gate length pseudomorphic MODFET technology which cover the 63-64 GHz and 76-77 GHz frequency bands allocated for automotive applications in Europe. The realized circuits comprise a 3-stage low noise amplifier (LNA) with 21 dB gain and 6.2 dB noise figure at 77 GHz, a 2-stage medium power amplifier (MPA) with 28 mW saturated output power at 77 GHz and more than 9.5 dB gain from 70 to 80 GHz, a FET mixer working from 63 to 78 GHz with a conversion loss of 2.5 dB and a noise figure of 14 dB at 64 GHz, and an oscillator with 8 mW output power at 75 GHz

Research paper thumbnail of Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models

IEEE Transactions on Microwave Theory and Techniques, 1992

The design and experimental characterization of high performance C and L band EDFAs pumped at 980... more The design and experimental characterization of high performance C and L band EDFAs pumped at 980 nm are presented. The spectral gain and noise figure performance of EDFAs analysed through simulations have shown strong dependence to EDF length. Highly optimized C and L band EDFAs are realised and experimentally characterized by gain and noise figure measurements. A small signal gain as high as 32.4 dB with a noise figure as low as 3.7 dB were obtained in our C band EDFA. In a L band EDFA, gain enhancement provided through C band signal injection is experimentally demonstrated. In this design, the backward ASE noise at the amplifier input is suppressed by an injected 1550 nm seed signal increasing PCE. This has resulted in a gain as high as 18.3 dB and a moderate noise figure of 7.1 dB obtained in our L band EDFA.

Research paper thumbnail of Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

IEEE Microwave and Guided Wave Letters, 1998

For use in low-noise receivers of communication or radar systems, three different two-stage ampli... more For use in low-noise receivers of communication or radar systems, three different two-stage amplifiers for 60 GHz, using a 0.15-μm PM-HEMT technology on GaAs, have been compared in terms of gain and noise figure. The amplifiers realized in coplanar waveguide technology (CPW) differ in the matching networks of the two stages, optimized either for low-noise or maximum gain bias condition.

Research paper thumbnail of Single-chip coplanar 94-GHz FMCW radar sensors

IEEE Microwave and Guided Wave Letters, 1999

... 9, NO. 2, FEBRUARY 1999 73 Single-Chip Coplanar 94-GHz FMCW Radar Sensors William H. Haydl, M... more ... 9, NO. 2, FEBRUARY 1999 73 Single-Chip Coplanar 94-GHz FMCW Radar Sensors William H. Haydl, Markus Neumann, Ludger Verweyen, Axel Bangert, Steffen Kudszus, Michael Schlechtweg, Axel Hulsmann, Axel Tessmann, Werner Reinert, and Tobias Krems ...

Research paper thumbnail of Simulation and analysis of low-resistance AlGaN/GaN HFET power switches

Research paper thumbnail of Fractal structures for low-resistance large area AlGaN/GaN power transistors

Research paper thumbnail of Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications

Research paper thumbnail of Novel Layout and Packaging for Lateral, Low-Resistance GaN-on-Si Power Transistors

Research paper thumbnail of Integrated Reverse-Diodes for GaN-HEMT Structures

Research paper thumbnail of 70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Indium Phosphide and Related Materials Conference, 2003

A 70 nm gate length metamorphic HEMT technology will be presented. Extrinsic cut-off frequencies ... more A 70 nm gate length metamorphic HEMT technology will be presented. Extrinsic cut-off frequencies of ft = 293 GHz and fmax = 337 GHz were achieved. The transistors have an on-state breakdown voltage of 1.7 V. A median time to failure of 1×106 h at 125°C and an activation energy of 1.3 eV was extrapolated based on a 10% gm,max

Research paper thumbnail of Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

Microwave, European Conference, 1992

A measurement and analysis technique has been developed that allows for, after s-parameter measur... more A measurement and analysis technique has been developed that allows for, after s-parameter measurements, direct extraction of all four transistor noise parameters from a single noise figure measurement. A simple 50 ¿ noise source measurement system can thus be used for noise parameter extraction, simplifying considerably the measurement of noise parameters and so enablitg fully automated high frequency testing and

Research paper thumbnail of A coplanar 94 GHz low-noise amplifier MMIC using 0.07 μm metamorphic cascode HEMTs

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003

A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utiliz... more A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 μm depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2×30 μm MHEMT device has shown a transit frequency (ft) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1×1 mm2.

Research paper thumbnail of Transistor noise parameter extraction using a 50 Omega measurement system

A 50- Omega noise-figure measurement system has been integrated into a fully automated S-paramete... more A 50- Omega noise-figure measurement system has been integrated into a fully automated S-parameter measurement system, allowing fast determination of transistor noise parameters as well as S-parameters as a function of both frequency and bias. This functionality from such a simple measurement system is achieved using a novel analysis technique, based on the noise temperature model (see M.W. Popieszalski, 1989), that allows, after S-parameter measurements and analysis, the direct extraction of all four transistor noise parameters from a single noise-figure measurement. The value of the unknown temperature Td and the physically relevant small-signal model circuit element values determined provide the CAD (computer-aided design) database necessary to model both the scaling behavior of the transistor S-parameters and noise parameters and their extrapolation to millimeter-wave frequencies.

Research paper thumbnail of Coplanar transceive MMIC for 77 GHz automotive applications based on a nonlinear design approach

Integrated transceive MMICs for automotive applications were realized in coplanar waveguide techn... more Integrated transceive MMICs for automotive applications were realized in coplanar waveguide technology, using a 0.15 μm PM-HEMT process. Based on an analytical nonlinear HEMT model, harmonic balance simulations of the entire chip, comprising up to 7 devices, showed good agreement with the measured power performance of the transmit and the receive paths. For the resistive mixer, a DSB noise temperature of only 297 K was measured

Research paper thumbnail of Compact monolithic coplanar 94 GHz front ends

… Digest, 1997., IEEE …, 1997

Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 pm AIGaAdlnGaAs /GaAs PM-HEM... more Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 pm AIGaAdlnGaAs /GaAs PM-HEMT technology are described. The MMlCs consist of a multistage low noise RF amplifier, a mixer, and an LO buffer amplifier. Balanced diode and single ended resistive HEMT mixers were investigated. A conversion gain of 13dB and a DSB noise figure of 6.5 dB were obtained with a very compact 1 x 4 mm2 front end MMIC, employing cascode amplifiers and a balanced rat race diode mixer. The chip size is substantially less than that of any receiver chip published to date.

Research paper thumbnail of High performance MMICs in coplanar waveguide technology for commercial V-band and W-band applications

IEEE Control Systems Magazine - IEEE CONTROL SYST MAG, 1994

We have designed and fabricated a family of coplanar MMICs based on a 0.16 μm gate length pseudom... more We have designed and fabricated a family of coplanar MMICs based on a 0.16 μm gate length pseudomorphic MODFET technology which cover the 63-64 GHz and 76-77 GHz frequency bands allocated for automotive applications in Europe. The realized circuits comprise a 3-stage low noise amplifier (LNA) with 21 dB gain and 6.2 dB noise figure at 77 GHz, a 2-stage medium power amplifier (MPA) with 28 mW saturated output power at 77 GHz and more than 9.5 dB gain from 70 to 80 GHz, a FET mixer working from 63 to 78 GHz with a conversion loss of 2.5 dB and a noise figure of 14 dB at 64 GHz, and an oscillator with 8 mW output power at 75 GHz

Research paper thumbnail of Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models

IEEE Transactions on Microwave Theory and Techniques, 1992

The design and experimental characterization of high performance C and L band EDFAs pumped at 980... more The design and experimental characterization of high performance C and L band EDFAs pumped at 980 nm are presented. The spectral gain and noise figure performance of EDFAs analysed through simulations have shown strong dependence to EDF length. Highly optimized C and L band EDFAs are realised and experimentally characterized by gain and noise figure measurements. A small signal gain as high as 32.4 dB with a noise figure as low as 3.7 dB were obtained in our C band EDFA. In a L band EDFA, gain enhancement provided through C band signal injection is experimentally demonstrated. In this design, the backward ASE noise at the amplifier input is suppressed by an injected 1550 nm seed signal increasing PCE. This has resulted in a gain as high as 18.3 dB and a moderate noise figure of 7.1 dB obtained in our L band EDFA.

Research paper thumbnail of Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

IEEE Microwave and Guided Wave Letters, 1998

For use in low-noise receivers of communication or radar systems, three different two-stage ampli... more For use in low-noise receivers of communication or radar systems, three different two-stage amplifiers for 60 GHz, using a 0.15-μm PM-HEMT technology on GaAs, have been compared in terms of gain and noise figure. The amplifiers realized in coplanar waveguide technology (CPW) differ in the matching networks of the two stages, optimized either for low-noise or maximum gain bias condition.

Research paper thumbnail of Single-chip coplanar 94-GHz FMCW radar sensors

IEEE Microwave and Guided Wave Letters, 1999

... 9, NO. 2, FEBRUARY 1999 73 Single-Chip Coplanar 94-GHz FMCW Radar Sensors William H. Haydl, M... more ... 9, NO. 2, FEBRUARY 1999 73 Single-Chip Coplanar 94-GHz FMCW Radar Sensors William H. Haydl, Markus Neumann, Ludger Verweyen, Axel Bangert, Steffen Kudszus, Michael Schlechtweg, Axel Hulsmann, Axel Tessmann, Werner Reinert, and Tobias Krems ...