A. Halliyal - Academia.edu (original) (raw)
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Ss. Cyril and Methodius University (UKIM) (Univerzitet "Sv. Kiril i Metodij" - Skopje)
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Papers by A. Halliyal
Solid-State Electronics, 2000
The time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors with 6 nm and 8 n... more The time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors with 6 nm and 8 nm Ta 2 O 5 gate dielectric layers is investigated. During constant voltage stress of the capacitors, a small increase in the timedependent gate current is observed, followed by the occurrence of erratic¯uctuations. After the occurrence of such a small jump, the current±voltage characteristics reveal increased gate current in the low gate voltage region, as compared to the current±voltage characteristics of fresh (unstressed) devices. In addition the gate current is shown to behave like a power law of the applied gate voltage. All above features are characteristics of the so-called soft breakdown event which has been previously reported for ultra-thin SiO 2 layers. #
Solid-State Electronics, 2000
The time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors with 6 nm and 8 n... more The time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors with 6 nm and 8 nm Ta 2 O 5 gate dielectric layers is investigated. During constant voltage stress of the capacitors, a small increase in the timedependent gate current is observed, followed by the occurrence of erratic¯uctuations. After the occurrence of such a small jump, the current±voltage characteristics reveal increased gate current in the low gate voltage region, as compared to the current±voltage characteristics of fresh (unstressed) devices. In addition the gate current is shown to behave like a power law of the applied gate voltage. All above features are characteristics of the so-called soft breakdown event which has been previously reported for ultra-thin SiO 2 layers. #