Daniele Faccia - Profile on Academia.edu (original) (raw)
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This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure se... more This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of´50˝C to 220˝C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. Therefore, the pressure sensors' working temperature with PN-junction isolation technology does not exceed 125˝C . Recently, with the use of dielectric isolation technology materials, silicon on insulation (SOI), and wideband-gap semiconductor material SiC, GaN, the working temperature of piezoresistive pressure sensors can reach 300˝C or even higher . However, the microfabrication technology of wideband-gap sensor materials is far less mature than silicon micromachining technology. Further progress must be made before these wideband-gap sensors can become cost-effective products. Therefore, the development of high temperature low-cost micromachined silicon piezoresistive transducers based on SOI technology remains attractive.
This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure se... more This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of´50˝C to 220˝C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. Therefore, the pressure sensors' working temperature with PN-junction isolation technology does not exceed 125˝C . Recently, with the use of dielectric isolation technology materials, silicon on insulation (SOI), and wideband-gap semiconductor material SiC, GaN, the working temperature of piezoresistive pressure sensors can reach 300˝C or even higher . However, the microfabrication technology of wideband-gap sensor materials is far less mature than silicon micromachining technology. Further progress must be made before these wideband-gap sensors can become cost-effective products. Therefore, the development of high temperature low-cost micromachined silicon piezoresistive transducers based on SOI technology remains attractive.